| Presentation | 2008-05-16 Characterization of epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method Yoshinori MATSUSHITA, Masashi KATO, Masaya ICHIMURA, Tomoaki HATAYAMA, Takeshi OSHIMA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Silicon Carbide (SiC) is a promising material for high power and high frequency devices. However we cannot transfer these devices to practical use because of presence of crystal defects in the wafer. In this work, we have measured excess carrier decay curves in (0001) Si face epitaxial p-type 4H-SiC layers with the microwave photoconductivity decay (μ-PCD) method. Two pieces were irradiated by electron in order to control defect density. Excess carrier decayed fast for the sample that has high density of defects and the decays were also fast in the measurement with low injection level. We compare these decay curves to calculated decay curves. As a result, we considered that EH_<6/7> center is dominant for samples with low EH_<6/7>, Z_<1/2> center density and Z_<1/2> center is dominant for samples with high EH_<6/7>, Z_<1/2> center density. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 4H-SiC / carrier lifetime / μ-PCD method / decay curve / electron irradiation / calculation / Injection level |
| Paper # | ED2008-20,CPM2008-28,SDM2008-40 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2008/5/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method |
| Sub Title (in English) | |
| Keyword(1) | 4H-SiC |
| Keyword(2) | carrier lifetime |
| Keyword(3) | μ-PCD method |
| Keyword(4) | decay curve |
| Keyword(5) | electron irradiation |
| Keyword(6) | calculation |
| Keyword(7) | Injection level |
| 1st Author's Name | Yoshinori MATSUSHITA |
| 1st Author's Affiliation | Nagoya Institute of Technology() |
| 2nd Author's Name | Masashi KATO |
| 2nd Author's Affiliation | Nagoya Institute of Technology |
| 3rd Author's Name | Masaya ICHIMURA |
| 3rd Author's Affiliation | Nagoya Institute of Technology |
| 4th Author's Name | Tomoaki HATAYAMA |
| 4th Author's Affiliation | NARA INSTITUTE of SCIENCE and TECHNOLOGY |
| 5th Author's Name | Takeshi OSHIMA |
| 5th Author's Affiliation | Japan Atomic Energy Agency |
| Date | 2008-05-16 |
| Paper # | ED2008-20,CPM2008-28,SDM2008-40 |
| Volume (vol) | vol.108 |
| Number (no) | 35 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |