Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, EID, ITE-IDY [detail] |
2019-12-24 16:00 |
Nara |
NAIST |
Stable Growth of (100)-Oriented Low Angle Grain Boundary Silicon Thin Films Extending to the length of 3000 μm by a Continuous-Wave Laser Lateral Crystallization Muhammad Arif Razali, Nobuo Sasaki, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) |
The continuous wave laser lateral crystallization of amorphous-Si on quartz produces a {100}-oriented grain-boundary fre... [more] |
|
US |
2014-12-15 13:30 |
Tokyo |
Tokyo Institute of Technology, Suzukakedai Campus |
Fundamental Study on Ultrasonic-Vibration Abrasive Process of Polycrystalline Diamond-End Mill Takeshi Watanabe, Takashi Goto (NS Tool), Masahiko Jin (Nippon Inst. of Tech.) US2014-65 |
Polycrystalline diamond (PCD) end mills are expected as a novel cutting tool that can finish the molds and machine parts... [more] |
US2014-65 pp.1-4 |
SDM, EID |
2014-12-12 14:00 |
Kyoto |
Kyoto University |
Characterization of Synchronous and Asynchronous Circuits using poly-Si TFTs Yosuke Nagase (Ryukoku Univ.), Tokiyoshi Matsuda, Mutsumi Kimura (Osaka Univ.), Taketoshi Matsumoto, Hikaru Kobayashi (Ryukoku Univ.) EID2014-25 SDM2014-120 |
We have evaluated multiple-input NAND circuits using polycrystalline silicon thin-film transistors and found that the ou... [more] |
EID2014-25 SDM2014-120 pp.61-65 |
SCE |
2012-01-26 14:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. B3-2 |
Imaging of anisotropic photo-induced current on semiconductors using laser-SQUID microscopy Takashi Hino, Yoshihiro Nakatani, Yuji Miyato, Hideo Itozaki (Osaka Univ.) SCE2011-25 |
Photocurrent flows from a point where a semiconductor, a polycrystalline silicon solar cell, is irradiated by a focused ... [more] |
SCE2011-25 pp.35-39 |
SDM |
2011-12-16 16:00 |
Nara |
NAIST |
Development of Low-Temperature Crystallization Method of Thin Film Semiconductor Using Soft X-ray Source Akira Heya, Yuki Nonomura, Shota Kino, Naoto Matsuo (Univ. Hyogo), Sho Amano (LASTI Univ. Hyogo), Shuji Miyamoto, Kazuhiro Kanda, Takayasu Mochizuki (Univ. Hyogo), Kaoru Toko, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2011-145 |
It is necessary two processes (crystal-nucleus formation and crystal grain growth) for crystallization. In general, the ... [more] |
SDM2011-145 pp.71-76 |
SDM |
2011-07-04 16:40 |
Aichi |
VBL, Nagoya Univ. |
Simultaneous Crystallization of Double-Layered Si Thin Films and Fabciration of Thin Film Devices Masahiro Horita, Koji Yamasaki, Emi Machida, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2011-68 |
We investigate simultaneous crystallization of double-layered silicon thin films on glass substrates by means of green l... [more] |
SDM2011-68 pp.103-108 |
ED |
2010-04-23 10:45 |
Yamagata |
|
Organic gate FETs for charactrizing carrier transport in polycrystalline Si Masaki Hashimoto, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.) ED2010-14 |
We fabricated organic gate Si FETs with Schottky contacts with a temperature of less than 150ºC to extract carrier ... [more] |
ED2010-14 pp.61-65 |
SDM |
2009-11-12 14:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Surface-Potential-Based Drain Current Model for Thin-Film Transistors Hiroshi Tsuji (Osaka Univ/JST), Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.) SDM2009-138 |
A new surface-potential-based drain current model for polycrystalline silicon thin-film transistors (poly-Si TFTs) is pr... [more] |
SDM2009-138 pp.19-22 |
OME, SDM |
2009-04-24 17:05 |
Saga |
AIST Kyushu-center |
Metal Induced Lateral Crystallization of PECVD a-Si and Its Impact on TFT Performance Shintaro Kanoh, Sho Nagata, Gou Nakagawa, Tanemasa Asano (Kyushu Univ.) SDM2009-7 OME2009-7 |
In the case of solid phase crystallization of amorphous Si (a-Si) deposited by plasma-enhanced chemical vapor deposition... [more] |
SDM2009-7 OME2009-7 pp.29-34 |
ED |
2009-04-24 13:25 |
Miyagi |
Tohoku Univ. |
Growth of polycrystalline Si on plastic substrate using pulsed-plasma CVD under near atmospheric Pressure Shogo Murashige, Mitsutaka Matsumoto, Yohei Inayoshi, Maki Suemitsu (Tohoku Univ.), Setsuo Nakajima, Tsuyoshi Uehara (Sekisui Chemicals Co. Ltd), Yasutake Toyoshima (AIST-ETRI) ED2009-15 |
Polycrystalline Si films have been deposited on polyethylene terephthalate(PET) substrates using pulsed-plasma CVD under... [more] |
ED2009-15 pp.63-67 |
SDM, OME |
2008-04-11 11:00 |
Okinawa |
Okinawa Seinen Kaikan |
Investigation on Characteristic Variation of Polycrystalline-Si Thin Film Transistor Having Stripe Channels Koji Akiyama, Kazunori Watanabe, Tanemasa Asano (Graduate school, Kyushu Univ.) SDM2008-5 OME2008-5 |
Thin Film Transistors (TFTs) having strip channels were fabricated on laterally grown polycrystalline silicon film prepa... [more] |
SDM2008-5 OME2008-5 pp.23-26 |
SDM, OME |
2008-04-11 11:50 |
Okinawa |
Okinawa Seinen Kaikan |
Application of Si Thin-Film to Photo-Sensor Device Mitsuharu Tai, Yasutaka Konno, Mutsuko Hatano (CRL, Hitachi), Toshio Miyazawa (Hitachi Displays) SDM2008-7 OME2008-7 |
In order to integrate new functions into display panel, thin-film transistor is considered as photo-sensor device, and i... [more] |
SDM2008-7 OME2008-7 pp.33-36 |
SDM, OME |
2008-04-12 11:00 |
Okinawa |
Okinawa Seinen Kaikan |
Microstructural Analysis of Polycrystalline Silicon Thin Films Formation Behavior during Aluminum Induced Crystallization Ken-ichi Ikeda (Kyushu Univ.), Takeshi Hirota (Mitsubishi Heavy Industries Ltd.), Kensuke Fujimoto (Kyushu Univ.), Youhei Sugimoto (Seiko Epson Corp.), Naoki Takata (Tokyo Inst. Tech.), Seiichiro Ii (Sojo Univ.), Hideharu Nakashima, Hiroshi Nakashima (Kyushu Univ.) SDM2008-19 OME2008-19 |
The formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC) was inves... [more] |
SDM2008-19 OME2008-19 pp.95-100 |
OME, SDM, ED |
2007-04-20 13:25 |
Fukuoka |
|
Very Fine Droplet Ejection from Electro-Static Inkjet Nozzle and Its Aplication to Metal Induced Crystallization of Silicon Yuji Ishida, Gou Nakagawa, Tanemasa Asano (Kyushu Univ.) ED2007-2 SDM2007-2 OME2007-2 |
Droplet ejection from an electrostatic inkjet nozzle having a needle has been investigated. It is found that reducing th... [more] |
ED2007-2 SDM2007-2 OME2007-2 pp.5-10 |