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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MW | 2024-01-25 14:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Optimization of GaN MOCVD growth conditions using simulation Naoki Yoshioka, Susumu Hatakenaka, Ryohei Nonoda, Yoshiki Kojima (Mitsubishi Elec. Corp.)  ED2023-66 MW2023-158 |
(To be available after the conference date) [more] | ED2023-66 MW2023-158 pp.4-6 |
| LQE, ED, CPM | 2023-11-30 13:30 |
Shizuoka | Fabrication of GaN HBTs using a quaternary AlGaInN emitter and a GaInN base Masaya Takimoto, Akira Mase, Kojima tomoki, Egawa Takashi, Miyoshi Makoto (Nagoya Inst.Tech.) ED2023-15 CPM2023-57 LQE2023-55 |
Heterojunction bipolar transistors (HBTs) using GaN-based semiconductors are considered to be promising next-generation ... [more] | ED2023-15 CPM2023-57 LQE2023-55 pp.6-10 |
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| LQE, ED, CPM | 2023-11-30 17:10 |
Shizuoka | Device characteristics of GaInN-based photovoltaic cells fabricated on Free-Standing GaN substrate for optical wireless power transmission system Takahiro Fujiawa, Nan Hu, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.) ED2023-23 CPM2023-65 LQE2023-63 |
GaInN-based photovoltaic (PV) devices are highly promising for application to optical wireless power transmission (OWPT)... [more] | ED2023-23 CPM2023-65 LQE2023-63 pp.44-47 |
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| CPM, ED, LQE | 2022-11-24 15:15 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Study on p-GaInN base layer and quaternary AlGaInN emitter layer for GaN HBTs Yusuke Iida, Akira Mase, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi (NITech) ED2022-36 CPM2022-61 LQE2022-69 |
GaN-based HBTs are very promising as next-generation high-frequency power devices. However, when considering the realiza... [more] | ED2022-36 CPM2022-61 LQE2022-69 pp.57-60 |
| CPM, ED, LQE | 2022-11-25 11:25 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Growth temperature dependence of semipolar {11-22} AlInN/GaInN Takahiro Fujisawa, Taiki Nakabayashi, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.), Narihito Okada, Kazuyuki Tadatomo (Yamaguchi Univ.) ED2022-42 CPM2022-67 LQE2022-75 |
AlInN alloys are promising materials for GaN-based electronic and optical devices. In this study, AlInN layers with a th... [more] | ED2022-42 CPM2022-67 LQE2022-75 pp.81-84 |
| ED, CPM, LQE | 2021-11-25 16:55 |
Online | Online | Evaluation of PV performance of GaInN besed photovoltaic cells under monochromatic light illumination for optical wireless power transmission system Taiki Nakabayashi, Kousuke Yamamoto, Pradip Dalapati, Takashi Egawa, Makoto Miyoshi (NIT) ED2021-27 CPM2021-61 LQE2021-39 |
GaInN-based photovoltaic (PV) devices are highly promising for application to optical wireless power transmission (OWPT)... [more] | ED2021-27 CPM2021-61 LQE2021-39 pp.59-62 |
| LQE, CPM, ED | 2020-11-26 11:15 |
Online | Online | Study on p/n conductivity control of epitaxial AlInN films Taiki Nakabayashi, Haruka Takada, Takashi Egawa, Makoto Miyoshi (NIT), Tetsuya Takeuchi (Meijo Univ.) ED2020-4 CPM2020-25 LQE2020-55 |
In this study, we attempted the p/n conductivity control of epitaxial AlInN films grown by metalorganic chemical vapor d... [more] | ED2020-4 CPM2020-25 LQE2020-55 pp.13-16 |
| LQE, CPM, ED | 2020-11-26 11:35 |
Online | Online | Examination of GaN-based photodetectors for optical wireless power transmission system Kosuke Yamamoto, Pradip Dalapati, Takashi Egawa, Makoto Miyoshi (NIT) ED2020-5 CPM2020-26 LQE2020-56 |
Aiming at a high-efficiency photodetectors for the optical wireless power transmission system consisting of semiconducto... [more] | ED2020-5 CPM2020-26 LQE2020-56 pp.17-20 |
| CPM, LQE, ED | 2019-11-21 15:30 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Growth, crystal and optical characterization of quaternary AlGaInN epitaxial films lattice-matched to c-plane GaN Hiroki Harada, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.) ED2019-45 CPM2019-64 LQE2019-88 |
Quaternary AlGaInN films with thickness greater than 150 nm are grown on c-plane GaN-on-sapphire templates by metalorgan... [more] | ED2019-45 CPM2019-64 LQE2019-88 pp.53-56 |
| ED, LQE, CPM | 2018-11-30 09:00 |
Aichi | Nagoya Inst. tech. | A 2.5-kV-breakdown-voltage AlGaN-channel HFET with a strain-controlled AlGaInN barrier layer Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. of Tech.) ED2018-41 CPM2018-75 LQE2018-95 |
Novel AlGaN-channel heterostructures employing quaternary AlGaInN barriers were grown by metalorganic chemical vapor dep... [more] | ED2018-41 CPM2018-75 LQE2018-95 pp.41-44 |
| LQE | 2017-12-15 14:10 |
Tokyo | [Invited Talk]
Recent progress of AlGaN deep-UV LEDs Hideki Hirayama, Masafumi Jo, Noritoshi Maeda (RIKEN), Yukio Kashima (Marubun) LQE2017-91 |
AlGaN deep ultraviolet light-emitting diodes (DUV-LEDs) are attracting a great deal of attention, since they have the po... [more] | LQE2017-91 pp.21-26 |
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| LQE, CPM, ED | 2017-12-01 09:40 |
Aichi | Nagoya Inst. tech. | A comparative study of InGaN/GaN MQW solar cells grown on sapphire and AlN/sapphire template by metalorganic chemical vapor deposition Takuma Mori, Miki Ohta, Hiroki Harada, Shinya Kato, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2017-57 CPM2017-100 LQE2017-70 |
Two kinds of substrates, sapphire and AlN/sapphire tem-plate (AlN template), were used for the growth of InGaN/GaN multi... [more] | ED2017-57 CPM2017-100 LQE2017-70 pp.39-44 |
| MW, ED | 2017-01-26 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Current status and problems of epitaxial wafers for GaN electronic devices Yohei Otoki (SCIOCS) ED2016-100 MW2016-176 |
GaN electronic devices have been in the practical stage mainly for high frequency applications. In epitaxial growth, the... [more] | ED2016-100 MW2016-176 pp.19-22 |
| CPM, LQE, ED | 2016-12-13 09:05 |
Kyoto | Kyoto University | MOCVD growth of rough-surface p-GaN and its application to InGaN/GaN MQW solar cells Takuma Mori, Makoto Miyoshi, Takashi Egawa (NIT) ED2016-68 CPM2016-101 LQE2016-84 |
Nitride-based solar cells with an InGaN absorption layer is promising as nontoxic and high efficiency solar cell devices... [more] | ED2016-68 CPM2016-101 LQE2016-84 pp.55-59 |
| SDM | 2016-06-29 11:15 |
Tokyo | Campus Innovation Center Tokyo | Fabrication of ferroelectric nanowire capacitors
-- Towards high-density non-volatile ferroelectric memories -- Hironori Fujisawa, Masaru Shimizu, Seiji Nakashima (Univ. Hyogo) SDM2016-35 |
We demonstrated fabrication of ZnO/(Hf,Zr)O_2/ZnO nanowire capacitors fabricated by metalorganic chemical vapor depositi... [more] | SDM2016-35 pp.15-19 |
| LQE, ED, CPM | 2014-11-28 09:55 |
Osaka | MOCVD Growth of GaN-based THz Quantum Cascade Laser and Observation of Emission at 7 THz Shiro Toyoda (RIKEN/Saitama Univ.), Wataru Terashima (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN/Saitama Univ.) ED2014-84 CPM2014-141 LQE2014-112 |
Terahertz quantum cascade lasers (THz-QCLs) are attracting attention for use as a lot of applications, because they are ... [more] | ED2014-84 CPM2014-141 LQE2014-112 pp.55-58 |
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| LQE, ED, CPM | 2014-11-28 14:30 |
Osaka | MOCVD Gorwoth and characterization of nearly lattice-matched InAlN/AlGaN 2DEG heterostructures Shu Fujita, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.) ED2014-93 CPM2014-150 LQE2014-121 |
InAlN/AlGaN two-dimensional-electron gas (2DEG) heterostructures are expected to be able to show extremely high breakdow... [more] | ED2014-93 CPM2014-150 LQE2014-121 pp.97-102 |
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| SDM | 2014-10-17 11:10 |
Miyagi | Niche, Tohoku Univ. | Epitaxial Growth of Ge and Ge1-xSnx Films by MOCVD Kohei Suda, Seiya Ishihara, Takahiro Kijima, Naomi Sawamoto (Meiji Univ.), Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh (Gas-phase Growth), Yoshio Oshita (Toyota Technological Inst.), Atsushi Ogura (Meiji Univ.) SDM2014-91 |
Ge and Ge1-xSnx are attractive materials for the next-generation transistors and optical devices. We achieved to grow ... [more] |
SDM2014-91 pp.41-45 |
| CPM, LQE, ED | 2013-11-29 14:45 |
Osaka | Growth of Connected Pillar AlN Buffer for AlGaN deep-UV LEDs Shiro Toyoda (Saitama Univ./RIKEN), Hideki Hirayama (RIKEN), Norihiko Kamata (Saitama Univ.) ED2013-85 CPM2013-144 LQE2013-120 |
A connected-pillar AlN buffer structure fabricated on sapphire substrate is considered to be quite effective for increas... [more] | ED2013-85 CPM2013-144 LQE2013-120 pp.95-100 |
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| ED, LQE, CPM | 2012-11-30 13:40 |
Osaka | Osaka City University | Approaches for improving efficiency of AlGaN-based deep-UV LEDs Yuji Tomita (Saitama Univ.), Hideki Hirayama, Sachie Fujikawa (RIKEN), Katsuya Mizusawa, Siro Toyoda, Norihiko Kamata (Saitama Univ.) ED2012-84 CPM2012-141 LQE2012-112 |
A connected-pillar AlN buffer structure fabricated on sapphire substrate is considered to be quite effective for increas... [more] | ED2012-84 CPM2012-141 LQE2012-112 pp.87-92 |
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