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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2024-01-25
15:55		 Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)		 Development of GaN HEMT using a diamond substrate as a heat spreader
Yusuke Shirayanagi (Mitsubishi Electric/Kumamoto Univ.), Shingo Tomohisa (Mitsubishi Electric), Keiji Kasamura, Hiroki Toyoda (Kumamoto Univ.), Takashi Matsumae, Yuichi Kurashima, Hideki Takagi (AIST), Akihisa Kubota (Kumamoto Univ.), Takashi Takenaga (Mitsubishi Electric) ED2023-69 MW2023-161		 1-inch size GaN-on-Diamond high electron mobility transistors (GoD HEMTs) has been successfully fabricated using surface... [more] ED2023-69 MW2023-161
pp.15-18
ED, MW 2020-01-31
11:20		 Tokyo Kikai-Shinko-Kaikan Bldg. GaN-on-Diamond HEMTs fabricated by Surface-Activated Room-Temperature Bonding
Shuichi Hiza (Mitsubishi Electric), Masahiro Fujikawa (Mitsubishi Elctric), Yuki Takiguchi, Kunihiko Nishimura, Eiji Yagyu (Mitsubishi Electric), Takashi Matsumae, Yuichi Kurashima, Hideki Takagi (AIST), Mikio Yamamuka (Mitsubishi Electric) ED2019-97 MW2019-131		  [more] ED2019-97 MW2019-131
pp.21-24
SDM 2019-02-07
16:10		 Tokyo   [Invited Talk] Fabrication of substrates with smooth Au surface for bonding at room temperature in atmospheric air
Takashi Matsumae, Michitaka Yamamoto, Yuichi Kurashima, Eiji Higurashi, Hideki Takagi (AIST) SDM2018-97		 e electroformed a Cu-based heat spreader with smooth Au thin film for room temperature bonding in atmospheric air. The C... [more] SDM2018-97
pp.27-30
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