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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2024-01-25
14:25		 Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)		 Optimization of GaN MOCVD growth conditions using simulation
Naoki Yoshioka, Susumu Hatakenaka, Ryohei Nonoda, Yoshiki Kojima (Mitsubishi Elec. Corp.) ED2023-66 MW2023-158		 (To be available after the conference date) [more] ED2023-66 MW2023-158
pp.4-6
CPM, ED, SDM 2008-05-15
16:15		 Aichi Nagoya Institute of Technology Fabrication and evaluation of InGaPN/GaPN DH LED light emitting diode grown by organometallic vapor phase epitaxy.
Fumiya Matsuno, Susumu Hatakenaka, Yoshiyuki Nakanishi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. Tech.) 		III-V-N compound semiconductors are one of the promising materials to be applied in OEIC. GaP0.98N0.02 can be lattice-ma... [more]
ED, CPM, SDM 2006-05-19
09:25		 Aichi VBL, Toyohashi University of Technology Heteroepitaxy of GaN for Si-GaN OEIC
Tatsuya Kawano, Susumu Hatakenaka, Mikinori Itoh, Akihiro Wakahara, Hiroshi Okada, Makoto Ishida (Toyohashi Univ. Tech.) 		A novel Si/GaN/g-Al2O3/Si structure by which both Si-LSI(Large scale integrated circuit) and GaN-based optical devices c... [more] ED2006-30 CPM2006-17 SDM2006-30
pp.55-60
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