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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2010)
Search Results: Keywords 'from:2010-10-21 to:2010-10-21'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2010-10-21 14:00 |
Miyagi | Tohoku University | [Invited Talk]
Channel strain evaluation for advanced LSI Atsushi Ogura, Daisuke Kosemura, Munehisa Takei, Motohiro Tomita (Meiji Univ.)  SDM2010-152 |
[more] | SDM2010-152 pp.1-6 |
| SDM | 2010-10-21 15:00 |
Miyagi | Tohoku University | Stress Tensor Measurements using Raman Spectroscopy with High-NA Oil-Immersion Lens Daisuke Kosemura, Atsushi Ogura (Meiji Univ.) SDM2010-153 |
Raman spectroscopy allows us to precisely evaluate stress with relatively high-spatial resolution and non-destructively.... [more] | SDM2010-153 pp.7-12 |
| SDM | 2010-10-21 15:30 |
Miyagi | Tohoku University | Mechanism of Work Function Modulation of PtSi Alloying with Yb Jumpei Ishikawa, Jun Gao, Shun-ichiro Ohmi (Tokyo Tech) SDM2010-154 |
The work function modulation of PtSi by alloying with Yb to achieve ultra low contact resistance for advanced CMOS was i... [more] | SDM2010-154 pp.13-16 |
| SDM | 2010-10-21 16:10 |
Miyagi | Tohoku University | A Study on Precise Control of PtSi Work Function by Alloying with Hf Jun Gao, Jumpei Ishikawa, Shun-ichiro Ohmi (Tokyo Tech) SDM2010-155 |
[more] | SDM2010-155 pp.17-20 |
| SDM | 2010-10-21 16:40 |
Miyagi | Tohoku University | Effect of ultra-thin Yb layer on n-type characteristics of pentacene based MOS diodes Young-uk Song, Hiroshi Ishiwara, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2010-156 |
[more] | SDM2010-156 pp.21-24 |
| SDM | 2010-10-21 17:10 |
Miyagi | Tohoku University | Low Resistance Source/Drain Contacts with Low Schottky Barrier for High Performance Transistors Hiroaki Tanaka, Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2010-157 |
[more] | SDM2010-157 pp.25-30 |
| SDM | 2010-10-21 17:40 |
Miyagi | Tohoku University | Low-temperature crystallization of thin-film amorphous silicon Yoko Iwakaji, Jun Hirota, Moto Yabuki, Hirokazu Ishida, Wakana Kaneko, Ichiro Mizushima, Hiroshi Akahori (Toshiba) SDM2010-158 |
Polysilicon are frequently used in various manufacture censor, solar cell and liquid crystal. In recent years, It comes ... [more] | SDM2010-158 pp.31-34 |
| SDM | 2010-10-22 09:30 |
Miyagi | Tohoku University | Study on Electron Transfer in Light-Emitting Polymer/Cathode Interface by Luminescence Computational Chemistry Itaru Yamashita, Hiroaki Onuma, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2010-159 |
[more] | SDM2010-159 pp.35-36 |
| SDM | 2010-10-22 10:00 |
Miyagi | Tohoku University | Emission Property Prediction of Eu2+-doped Phosphors from Crystal Structures: Material Informatics Study Hiroaki Onuma, Daiki Yoshihara, Itaru Yamashita, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2010-160 |
[more] | SDM2010-160 pp.37-38 |
| SDM | 2010-10-22 10:30 |
Miyagi | Tohoku University | Theoretical Study on Carrier Transfer in Si/SiC Quantum Dot Solar Cells Sho Hirose, Itaru Yamashita, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2010-161 |
Quantum dot solar cells are expected as high-efficiency solar cells. However, reported efficiencies are lower than the h... [more] | SDM2010-161 pp.39-40 |
| SDM | 2010-10-22 11:10 |
Miyagi | Tohoku University | Evaluation of Internal Strain and Electron Mobility in poly-Si TFTs Formed by CW Laser Lateral Crystallization Shuntaro Fujii, Shin-Ichiro Kuroki, Koji Kotani (Tohoku Univ.) SDM2010-162 |
Tensile strain is induced in the polycrystalline silicon (poly-Si) films formed by CW laser lateral crystallization (CLC... [more] | SDM2010-162 pp.41-44 |
| SDM | 2010-10-22 11:40 |
Miyagi | Tohoku University | Fabrication of Highly Crystalline-Oriented Poly-Si Thin Films by using Double -Line-Beam CLC for High Performance LPTS-TFT Shin-Ichiro Kuroki, Yuya Kawasaki, Shuntaro Fujii, Koji Kotani (Tohoku Univ.), Takashi Ito (Tokyo Inst. of Tech.) SDM2010-163 |
Highly bi-axially oriented poly-Si thin films with very long grains were successfully fabricated on quartz substrates by... [more] | SDM2010-163 pp.45-48 |
| SDM | 2010-10-22 13:10 |
Miyagi | Tohoku University | Effect of gate insulator on the electrical properties of pentacene based organic field-effect transistors Min Liao, Hiroshi Ishiwara, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2010-164 |
[more] | SDM2010-164 pp.49-52 |
| SDM | 2010-10-22 13:40 |
Miyagi | Tohoku University | Integration of Novel Non-porous Low-k Dielectric Fluorocarbon into Advanced Cu Interconnects Xun Gu, Takenao Nemoto, Yugo Tomita, Akinobu Teramoto, Shin-Ichiro Kuroki, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2010-165 |
[more] | SDM2010-165 pp.53-56 |
| SDM | 2010-10-22 14:10 |
Miyagi | Tohoku University | Characterization of In-situ Formed HfN/HfSiON Gate Stacks by ECR Sputtering Takahiro Sano, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2010-166 |
[more] | SDM2010-166 pp.57-60 |
| SDM | 2010-10-22 14:50 |
Miyagi | Tohoku University | Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI) SDM2010-167 |
The chemical and electronic-band structures of SiO2/Si interfaces formed utilizing oxygen radicals were investigated by ... [more] | SDM2010-167 pp.61-65 |
| SDM | 2010-10-22 15:20 |
Miyagi | Tohoku University | Development of Automated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method and Its Application to Silicon/Insulator Interface Formation Technologies Hideyuki Tsuboi, Kenji Inaba, Mariko Ise, Yukie Hayashi, Yuka Suzuki, Hiromi Sato, Yukiko Obara, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2010-168 |
The automated system of ultra-accelerated quantum chemical molecular dynamics method (UA-QCMD) has been developed. The n... [more] | SDM2010-168 pp.67-68 |
| SDM | 2010-10-22 15:50 |
Miyagi | Tohoku University | Dry, Wet and Radical Oxidation Simulation of Silicon Surface Using Automated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method Hideyuki Tsuboi, Mariko Ise, Yukie Hayashi, Yuka Suzuki, Hiromi Sato, Yukiko Obara, Kenji Inaba, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2010-169 |
Using our newly developed automated system of ultra-accelerated quantum chemical molecular dynamics method, we have inve... [more] | SDM2010-169 pp.69-70 |
| SDM | 2010-10-22 16:20 |
Miyagi | Tohoku University | Strain evaluation in Si at atomically flat SiO2/Si interface Maki Hattori (Meiji Univ.), Daisuke Kosemura (Meiji Univ./JSPS), Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Motohiro Tomita, Yuuki Mizukami, Yuuki Hashiguchi, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe), Tomoyuki Koganezawa (JASRI) SDM2010-170 |
We performed Raman spectroscopy and in-plane XRD measurement to clarify the structure and strain in Si at and near an at... [more] | SDM2010-170 pp.71-75 |
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