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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2009)
Search Results: Keywords 'from:2009-11-12 to:2009-11-12'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2009-11-12 10:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Low power 3D system integration by inductive coupling communications and its perspective[invited] Tadahiro Kuroda (Keio Univ.) |
[more] | |
| SDM | 2009-11-12 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Compact MOSFET Model and Its Perspective
-- from bulk-MOSFET to MG-MOSFET -- Mitiko Miura-Mattausch, Masataka Miyake, Koh Johguchi, Shunta Kusu, Kenta Ishimura, Hideyuki Kikuchihara, Feldmann Uwe, Mattausch Hans Juergen (Hiroshima Univ.)  SDM2009-135 |
[more] | SDM2009-135 pp.1-6 |
| SDM | 2009-11-12 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
2009 SISPAD Review Katsuhiko Tanaka (MIRAI-Selete) SDM2009-136 |
2009 International Conference on Simulation of Semiconductor Processes and Devices (2009 SISPAD) was held on September 9... [more] | SDM2009-136 pp.7-11 |
| SDM | 2009-11-12 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Report on 2009 SISPAD (2) Matsuto Ogawa (Kobe Univ.) SDM2009-137 |
This report focuses on the quantum devices session and nano-scaled device session in the 2009 SISPAD held at Hotel Del ... [more] |
SDM2009-137 pp.13-17 |
| SDM | 2009-11-12 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Surface-Potential-Based Drain Current Model for Thin-Film Transistors Hiroshi Tsuji (Osaka Univ/JST), Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.) SDM2009-138 |
A new surface-potential-based drain current model for polycrystalline silicon thin-film transistors (poly-Si TFTs) is pr... [more] | SDM2009-138 pp.19-22 |
| SDM | 2009-11-12 15:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | HiSIM-IGBT: A Compact IGBT Model for Circuit Simulation Masataka Miyake, Hiroki Masuoka, Uwe Feldmann, Mitiko Miura-Mattausch (Hiroshima Univ.) SDM2009-139 |
HiSIM-IGBT, a compact IGBT (Insulated Gate Bipolar Transistor) model for circuit simulation has been developed. The mode... [more] | SDM2009-139 pp.23-27 |
| SDM | 2009-11-12 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Development of MEMS and Equivalent Circuit Generator Nobuyo Fujiwara, Kazuo Asaumi (Mizuho Information & Research Institute), Tomoyuki Koike (Micromachine Center), Toshiyuki Tsuchiya (Kyoto Univ,), Gen Hashiguchi (Shizuoka Univ.) SDM2009-140 |
In order to improve CMOS-integrated MEMS(micro electromechanical system) devices design efficiency, we developed a desig... [more] | SDM2009-140 pp.29-32 |
| SDM | 2009-11-12 15:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Device Modeling and Simulation for CMOS Biosensor Applications Shigeyasu Uno, Kazuo Nakazato (Nagoya Univ.) SDM2009-141 |
Modeling and simulation of Ion-sensitive Field-Effect Transistor (ISFET) operation is presented. A brief explanation of ... [more] | SDM2009-141 pp.33-37 |
| SDM | 2009-11-13 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Transistors Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Kenji Taniguchi (Osaka Univ.) SDM2009-142 |
Hot phonon generation and its impact on the current conduction in nanoscale Si-MOSFETs are investigated using numerical ... [more] | SDM2009-142 pp.39-44 |
| SDM | 2009-11-13 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | R-matrix method for quantum transport simulation in atomistic modeling Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura (Osaka Univ./JST) SDM2009-143 |
A discrete analog of the R-matrix method is presented for atomistic quantum transport calculations. The method enables ... [more] | SDM2009-143 pp.45-48 |
| SDM | 2009-11-13 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Carrier Transport Analysis of Strained SiGe/Si-pMOSFETs using Full-band Device Simulation Hiroshi Takeda (NEC Electronics Corp.), Michihito Kawada (NEC Informatec Systems), Kiyoshi Takeuchi, Masami Hane (NEC Electronics Corp.) SDM2009-144 |
Transport characteristics of strained-SiGe on Si channel pMOSFETs is analyzed in detail by full-band device simulation. ... [more] | SDM2009-144 pp.49-53 |
| SDM | 2009-11-13 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Novel Monte Carlo Simulation to Evaluate the Size Effect of Resistivity for Scaled Metallic Interconnects Takashi Kurusu, Makoto Wada, Noriaki Matsunaga, Akihiro Kajita, Hiroyoshi Tanimoto, Nobutoshi Aoki, Yoshiaki Toyoshima, Hideki Shibata (Toshiba Corp.) SDM2009-145 |
Recently, the size effect on resistivity in very narrow and thin metallic wires is a crucial problem on development of s... [more] | SDM2009-145 pp.55-60 |
| SDM | 2009-11-13 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Tutorial Invited Lecture]
Possible Performance of SOI Devices, their Potentiality and Prospects
-- Past Constraint and Current Issues -- Yasuhisa Omura (Kansai Univ.) SDM2009-146 |
This report summarizes the present stage of SOI MOSFET technology and the aim and prospect of 3-D scaled MOSFET technolo... [more] | SDM2009-146 pp.61-66 |
| SDM | 2009-11-13 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Random Fluctuations in Scaled MOS Devices Kiyoshi Takeuchi (MIRAI-Selete/NEC Corp.), Akio Nishida (MIRAI-Selete), Toshiro Hiramoto (MIRAI-Selete/Univ. of Tokyo.) SDM2009-147 |
[more] | SDM2009-147 pp.67-71 |
| SDM | 2009-11-13 15:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Discrete Surface Potential Model which Accurately Reflects Channel Doping Profile and its Application to Ultra-Fast Analysis of Random Dopant Fluctuation Hironori Sakamoto, Hiroshi Arimoto, Hiroo Masuda, Satoshi Funayama, Shigetaka Kumashiro (MIRAI-Selete) SDM2009-148 |
[more] | SDM2009-148 pp.73-78 |
| SDM | 2009-11-13 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Atomic Scale Analysis of the Degradation Mechanism of the Integrity High-k/Metal-gate Interface Caused by the Interaction between Point-Defects and Residual Strain around the Interface Ken Suzuki, Yuta Itoh, Tatsuya Inoue, Hideo Miura (Tohoku Univ.), Hideki Yoshikawa, Keisuke Kobayashi (National Inst. for Materials Science), Seiji Samukawa (Tohoku Univ.) SDM2009-149 |
Control of the interfacial crystallographic structure between a dielectric film and a gate electrode is one of the most ... [more] | SDM2009-149 pp.79-84 |
| SDM | 2009-11-13 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Trial application of tight-binding method to Si-cluster surrounded by SiO2 in optimized atomistic network Kenji Kawabata, Takashi Ichikawa, Hiroshi Watanabe (Toshiba Corp.) SDM2009-150 |
(To be available after the conference date) [more] | SDM2009-150 pp.85-90 |
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