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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2009)
Search Results: Keywords 'from:2009-06-19 to:2009-06-19'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2009-06-19 09:30 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Material properties of Ge - Comparison with Silicon Kohei M. Itoh (Keio Univ.)  SDM2009-26 |
This presentation introduces history of germanium and properties of germanium that are different from what is believed t... [more] | SDM2009-26 pp.1-2 |
| SDM | 2009-06-19 10:00 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Atomistic Modeling of GeO2/Ge Interface Structure by Molecular Dynamics
-- Comparison with SiO2/Si Interface -- Takanobu Watanabe, Tomoya Onda, Ryo Tosaka, Hideaki Yamamoto (Waseda Univ.) SDM2009-27 |
We have performed atomistic modeling of GeO2/Ge interface structure by using newly developed interatomic force-field for... [more] | SDM2009-27 pp.3-8 |
| SDM | 2009-06-19 10:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | First-Principles Calculations for Interfacial Reaction during Si Oxidation Toru Akiyama (Mie Univ.), Hiroyuki Kageshima (NTT Corp.), Masashi Uematsu (Keio Univ.), Tomonori Ito (Mie Univ.) SDM2009-28 |
The interfacial reaction processes during Si oxidation are investigated based on first-principles total-energy electroni... [more] | SDM2009-28 pp.9-13 |
| SDM | 2009-06-19 10:50 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Fundamental Study on GeO2/Ge Interface and its Electrical Properties Heiji Watanabe, Marina Saito, Shoichiro Saito, Gaku Okamoto, Katsuhiro Kutsuki, Takuji Hosoi, Tomoya Ono, Takayoshi Shimura (Osaka Univ.) SDM2009-29 |
[more] | SDM2009-29 pp.15-20 |
| SDM | 2009-06-19 11:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Electrical Properties of Ge MIS Interface Defects Noriyuki Taoka, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota (MIRAI-NIRC), Shinichi Takagi (MIRAI-NIRC/Univ. of Tokyo) SDM2009-30 |
The response of majority and minority carriers with interface traps have been systematically investigated for Ge MIS int... [more] | SDM2009-30 pp.21-26 |
| SDM | 2009-06-19 12:40 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Thermal Stability of Ge MOS Devices
-- Influence of Ge monoxide [GeO(II)] on Ge oxygen [GeO(g)] desorption -- Yoshiki Kamata (MIRAI-TOSHIBA), Akira Takashima (TOSHIBA Corp), Tsutomu Tezuka (MIRAI-TOSHIBA) SDM2009-31 |
GeO(g) desorption temperature decreases with the increase in the ratio of GeO(II) in Ge oxide and is independent of the ... [more] | SDM2009-31 pp.27-31 |
| SDM | 2009-06-19 13:00 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Fermi Level Pinning at Metal/Germanium Interface and its Controllability Tomonori Nishimura, Kosuke Nagashio, Koji Kita, Akira Toriumi (The Univ. of Tokyo//JST-CREST) SDM2009-32 |
The purpose is to understand metal/germanium (Ge) junction characteristics to control Schottky barrier height at metal/G... [more] | SDM2009-32 pp.33-38 |
| SDM | 2009-06-19 13:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-33 |
To realize high mobility Ge channel metal-oxide-semiconductor field-effect-transistor (MOSFET), it is necessary to estab... [more] | SDM2009-33 pp.39-44 |
| SDM | 2009-06-19 13:40 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Improvement of electrical characteristics of HfO2/Ge MIS structure treated by fluorine gas and nitrogen radical Hideto Imajo, Hyun Lee, Dong-Hun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) SDM2009-34 |
The electrical properties and interface states have been improved by fluorine treatment on Ge, but there was a problem w... [more] | SDM2009-34 pp.45-50 |
| SDM | 2009-06-19 14:10 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Electrical Characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO2 Interlayers
-- Formation of Insulator on Ge Substrate -- Hiroshi Nakashima, Kana Hirayama, Haigui Yang, Dong Wang (Kyushu Univ.) SDM2009-35 |
We are searching MIS structure with good interface and insulating properties for high mobility Ge channel. Our approach... [more] | SDM2009-35 pp.51-56 |
| SDM | 2009-06-19 14:30 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Photoemission Study of Suboxides on GeO2/Ge Structure Formed by Thermal and Low Temperature Processes Hideki Murakami, Yoshikazu Ono, Akio Ohta, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-36 |
The chemical bonding features of ultrathin Ge oxide layers, which were prepared on Ge(100) by wet-chemical treatment, lo... [more] | SDM2009-36 pp.57-60 |
| SDM | 2009-06-19 14:50 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Effect of ALD-Al2O3 Layer on Interfacial Reaction between LaAlO and Ge Mitsuo Sakashita, Ryosuke Kato, Shinya Kyogoku, Hiroki Kondo, Shigeaki Zaima (Nagoya Univ.) SDM2009-37 |
Ge channel MOSFET with high-k gate dielectric film attract much attention from a viewpoint of realizing high speed and l... [more] | SDM2009-37 pp.61-66 |
| SDM | 2009-06-19 15:10 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete) SDM2009-38 |
We have systematically studied the effect of post deposition annealing (PDA) for Al2O3-capped HfO2 on flatband voltage (... [more] | SDM2009-38 pp.67-70 |
| SDM | 2009-06-19 15:40 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Intrinsic Correlation between Mobility Reduction and Vt shift due to Interface Dipole Modulation in HfSiON/SiO2 stack by La or Al addition Kosuke Tatsumura, Takamitsu Ishihara, Seiji Inumiya, Kazuaki Nakajima, Akio Kaneko, Masakazu Goto, Shigeru Kawanaka, Atsuhiro Kinoshita (Toshiba Corp.) SDM2009-39 |
Intrinsic correlation between mobility reduction by remote Coulomb scattering (RCS) and threshold voltage shift (ΔVt), b... [more] | SDM2009-39 pp.71-76 |
| SDM | 2009-06-19 16:00 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Floating Gate Memory with Biomineralized Nanodots Embedded in High-k Gate Dielectric Kosuke Ohara, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC), Yukiharu Uraoka (NAIST/CREST) SDM2009-40 |
The memory properties of nano-dot-type floating gate memories with Co bio-nanodots (Co-BNDs) embedded in HfO2 layer were... [more] | SDM2009-40 pp.77-80 |
| SDM | 2009-06-19 16:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Formation of Pr Oxide by Atomic Layer Deposition Using Pr(EtCp)3. Hiroki Kondo, Kazuya Furuta, Hirotaka Matsui, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-41 |
Formation of Pr oxide by atomic layer deposition (ALD) using Pr(EtCp)3 precursor was investigated, and ALD growth of Pr ... [more] | SDM2009-41 pp.81-85 |
| SDM | 2009-06-19 16:50 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Characterization of La Diffusion into HfO2/SiO2 Stacked Layers from Ultrathin LaOx Akio Ohta, Daisuke Kanme, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-42 |
A stack structure consisting of ~1.3nm-thick LaOx and ~4.0nm-thick HfO2 was formed on thermally grown SiO2 on Si(100) by... [more] | SDM2009-42 pp.87-92 |
| SDM | 2009-06-19 16:55 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Theoretical investigation about electronic structure of doping metal silicide Shinichi Sotome, Takashi Nakayama (Chiba Univ) SDM2009-43 |
[more] | SDM2009-43 pp.93-97 |
| SDM | 2009-06-19 17:00 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Characterization of Chemical Bonding Features and Electronic States at TiO2/Pt Interface Yuta Goto, Daisuke Kanme, Akio Ohta, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima University) SDM2009-44 |
We focused on the interfacial reaction between TiO2 and Pt to gain a better understanding of the mechanism of resistive ... [more] | SDM2009-44 pp.99-103 |
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