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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2008)
Search Results: Keywords 'from:2008-07-09 to:2008-07-09'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ED | 2008-07-11 09:25 |
Hokkaido | Kaderu２・７ | [Invited Talk]
Recent Advances on GaN Vertical Power Device Tetsu Kachi (Toyota Central R&D Labs., Inc.)  ED2008-72 SDM2008-91 |
Two types of the vertical device structure have been developed for GaN power devices. One is similar to DMOSFET, which ... [more] | ED2008-72 SDM2008-91 pp.171-175 |
| SDM, ED | 2008-07-11 09:50 |
Hokkaido | Kaderu２・７ | [Invited Talk]
Millimeter-wave MMIC Technologies for F-band Application Toshihiko Kosugi, Akihiko Hirata, Koichi Murata, Naoya Kukutsu, Yuichi Kado, Takatomo Enoki (NTT) ED2008-77 SDM2008-96 |
We describe ICs and their waveguide modules for F-band wireless communications and imaging systems. InP-HEMTs and a cop... [more] | ED2008-77 SDM2008-96 pp.199-204 |
| SDM, ED | 2008-07-11 10:15 |
Hokkaido | Kaderu２・７ | [Invited Talk]
Emission of Terahertz Radiation from InGaP/InGaAs/GaAs Grating-Bicoupled Plasmon-Resonant Nano-Transistors Taiichi Otsuji (Tohoku Univ.) ED2008-78 SDM2008-97 |
This paper reviews recent advances in emission of terahertz radiation from our original dual-grating gate high-electron ... [more] | ED2008-78 SDM2008-97 pp.205-210 |
| SDM, ED | 2008-07-11 10:50 |
Hokkaido | Kaderu２・７ | High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial) ED2008-73 SDM2008-92 |
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) using thick poly-crystalline AlN (pol... [more] | ED2008-73 SDM2008-92 pp.177-181 |
| SDM, ED | 2008-07-11 11:05 |
Hokkaido | Kaderu２・７ | Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET Chien-Nan Liao (National Central Univ.), Jhih-Chao Huang, Feng-Tso Chien (Feng Chia Univ.), Chii-Wen Chen (Minghsin Univ. of Sci. and Tech.), Yao-Tsung Tsai (National Central Univ.) ED2008-74 SDM2008-93 |
Power MOSFETs are used as control switches in many application. Comparing with bipolar junction transistor, power MOSFET... [more] | ED2008-74 SDM2008-93 pp.183-186 |
| SDM, ED | 2008-07-11 11:20 |
Hokkaido | Kaderu２・７ | The Analysis of the Floating Field Limiting Ring and Field Plate Chien-Nan Liao (National Central Univ.), Jhih-Chao Huang, Feng-Tso Chien, Ching-Hwa Cheng (Feng Chia Univ.), Yao-Tsung Tsai (National Central Univ.) ED2008-75 SDM2008-94 |
Potential and strength of surface electric field distribution have strongly influence on breakdown voltage and reliabili... [more] | ED2008-75 SDM2008-94 pp.187-191 |
| SDM, ED | 2008-07-11 11:35 |
Hokkaido | Kaderu２・７ | A Latchup-Free Power-Rail ESD Clamp Circuit with Stacked-Bipolar Devices in a High-Voltage Technology Jae-Young Park, Jong-Kyu Song, Chang-Soo Jang, Joon-Tae Jang, San-Hong Kim, Sung-Ki Kim, Taek-Soo Kim (Dongbu HiTek) ED2008-76 SDM2008-95 |
The holding voltage of the high-voltage devices the snapback breakdown condition has been known to be much smaller than ... [more] | ED2008-76 SDM2008-95 pp.193-197 |
| SDM, ED | 2008-07-11 11:50 |
Hokkaido | Kaderu２・７ | Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter HyunChul Kang, Takuya Nishimura, Taiichi Otsuji (Tohoku Univ.), Naoya Watanabe, Tanemasa Asano (Kyushu Univ.) ED2008-79 SDM2008-98 |
[more] | ED2008-79 SDM2008-98 pp.211-215 |
| SDM, ED | 2008-07-11 12:05 |
Hokkaido | Kaderu２・７ | Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter Takuya Nishimura, Nobuhiro Magome, HyunChul Kang, Taiichi Otsuji (Tohoku Univ.) ED2008-80 SDM2008-99 |
We’ve proposed a 2-dimensional (2D) plasmon resonant emitter incorporating a super-grating dual-gate (SGG) structure. S... [more] | ED2008-80 SDM2008-99 pp.217-220 |
| SDM, ED | 2008-07-11 12:20 |
Hokkaido | Kaderu２・７ | Performance Prediction of Deep Sub-nH Inductors for Millimeter-Wave Applications Sooyeon Kim, Yongho Oh, Jae-Sung Rieh (Korea Univ.) ED2008-81 SDM2008-100 |
[more] | ED2008-81 SDM2008-100 pp.221-226 |
| SDM, ED | 2008-07-11 10:50 |
Hokkaido | Kaderu２・７ | Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML type D-Flip Flop Tetsuo Endoh, Masashi Kamiyanagi (Tohoku Univ.) ED2008-82 SDM2008-101 |
In this paper, I propose the novel Dynamic Feedback (DF-) MCML technique for high-speed and high-gain MCML type D-Flip F... [more] | ED2008-82 SDM2008-101 pp.227-231 |
| SDM, ED | 2008-07-11 11:05 |
Hokkaido | Kaderu２・７ | Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations Masashi Kamiyanagi, Yuto Norifusa, Tetsuo Endoh (Tohoku Univ.) ED2008-83 SDM2008-102 |
We propose Current Controlled MOS Current Mode Logic (CC-MCML) and have succeeded in fabricating CC-MCML with 180nm CMOS... [more] | ED2008-83 SDM2008-102 pp.233-238 |
| SDM, ED | 2008-07-11 11:20 |
Hokkaido | Kaderu２・７ | Implementation of Channel Thermal Noise Model in CMOS RFIC Design Jongwook Jeon, Ickhyun Song, Hyungcheol Shin (Seoul National Univ.) ED2008-84 SDM2008-103 |
Abstract - In this paper, a simple channel thermal noise model for short-channel MOSFET is applied to the RF circuit des... [more] | ED2008-84 SDM2008-103 pp.239-242 |
| SDM, ED | 2008-07-11 11:35 |
Hokkaido | Kaderu２・７ | CMOS Digitally Controlled Programmable Gain Amplifier (PGA) with DC Offset Cancellation Kyunghoon Kim, Jinwook Burn (Sogang Univ.) ED2008-85 SDM2008-104 |
This paper presents a programmable gain amplifier (PGA) to integrate a RF direct-conversion receiver for DVB-H / T-DMB s... [more] | ED2008-85 SDM2008-104 pp.243-248 |
| SDM, ED | 2008-07-11 11:50 |
Hokkaido | Kaderu２・７ | Chip Design of a Successive Approximation A/D Converter for Structure Monitoring System Jae-Woon Kim, Jinwook Burm (Sogang Univ.) ED2008-87 SDM2008-106 |
[more] | ED2008-87 SDM2008-106 pp.253-257 |
| SDM, ED | 2008-07-11 12:05 |
Hokkaido | Kaderu２・７ | Chip Design of Structure Monitoring Sensor Driving IC for Telemetrics Application Jun-Gyu Lee, Bae-Ki Jung, Jinwook Burm (Sogang Univ.) ED2008-88 SDM2008-107 |
This paper proposer a chip and implementation of optical fiber sensor IC for structure monitoring system. We studied and... [more] | ED2008-88 SDM2008-107 pp.259-264 |
| SDM, ED | 2008-07-11 12:20 |
Hokkaido | Kaderu２・７ | The Data Analysis Technique of the Atomic Force Microscopy for the Atomically Flat Silicon Surface Masahiro Konda, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Tadahiro Ohmi (Tohoku Univ.) ED2008-89 SDM2008-108 |
Atomically flat (100) silicon surface constructed with atomic terraces and steps is realized by argon annealing at 1200℃... [more] | ED2008-89 SDM2008-108 pp.265-269 |
| SDM, ED | 2008-07-11 13:35 |
Hokkaido | Kaderu２・７ | Electrical Properties of Highly Crystallized Ge:H Thin Films Grown from VHF Inductively-Coupled Plasma of H2-diluted GeH4 Hirotaka Kaku, Katsunori Makihara, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) ED2008-90 SDM2008-109 |
Formation of highly crystallized Ge films on quartz substrate from VHF-ICP of GeH4 and electrical properties of the film... [more] | ED2008-90 SDM2008-109 pp.271-274 |
| SDM, ED | 2008-07-11 13:50 |
Hokkaido | Kaderu２・７ | Study on Gate Around Transistor (GAT) Layout for Radiation Hardness Min-su Lee, Young-Soo Lee, Chul-Bum Kim, Young-Ho Kim (KAIST), Byoung-Gon Yu, Hee Chul Lee (ETRI) ED2008-91 SDM2008-110 |
We designed a Gate Around Transistor (GAT) layout for radiation hardness. A GAT MOSFET layout with an improved guard rin... [more] | ED2008-91 SDM2008-110 pp.275-280 |
| SDM, ED | 2008-07-11 14:05 |
Hokkaido | Kaderu２・７ | Low Power Pixel-Level ADC for a Micro-Bolometer Dong-Heon Ha, Chi Ho Hwang (KAIST), Woo Seok Yang (ETRI), Yong Soo Lee, Hee Chul Lee (KAIST) ED2008-92 SDM2008-111 |
[more] | ED2008-92 SDM2008-111 pp.281-284 |
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