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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2006)
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Search Results: Keywords 'from:2006-06-21 to:2006-06-21'
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| [Go to Official SDM Homepage (Japanese)] |
| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Ascending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| SDM |
2006-06-22
14:40 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Electric characteristics of HfSiON gate dielectric film(tentative)
Ryu Hasunuma, Tatsuya Naito (Univ. of Tsukuba), Seiji Inumiya (Selete), Kikuo Yamabe (Univ. of Tsukuba) |
[more] |
SDM2006-62
pp.113-117 |
| SDM |
2006-06-22
15:05 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
XPS studies on barrier height at Au/ultra-thin SiO2 interface
Haruhiko Suzuki, Akira Hasegawa, Hiroshi Nohira, Takeo Hattori (Musashi inst technol), Moroyuki Yamawaki, Nobuko Suzuki (SOKENDAI), Daisuke Kobayashi, Kazuyuki Hirose (ISAS) |
As a result of ongoing scale-down of Si-MOS devices, gate SiO2 films have been thinned down to 0.8 nm. In this study, th... [more] |
SDM2006-63
pp.119-124 |
| SDM |
2006-06-22
15:30 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Work Functions at Impurity Pileup Ni-FUSI/SiO(N) Interface and FUGE(Fully Germanided) gates
Yoshinori Tsuchiya, Masahiko Yoshiki, Atsuhiro Kinoshita, Masato Koyama, Junji Koga, Akira Nishiyama (Toshiba Co,) |
In this paper, we show the results of our recent work on work function control in metal gate, which is one of the most d... [more] |
SDM2006-64
pp.125-130 |
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