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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2012)
Search Results: Keywords 'from:2012-06-21 to:2012-06-21'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2012-06-21 09:00 |
Aichi | VBL, Nagoya Univ. | Evaluation of Chemical Structures and Resistive Switching Behaviors of Pt/Si rich Oxide/TiN System Motoki Fukusima (Nagoya Univ.), Akio Ohta (Hiroshima Univ.), Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)  SDM2012-43 |
[more] | SDM2012-43 pp.1-6 |
| SDM | 2012-06-21 09:20 |
Aichi | VBL, Nagoya Univ. | Resistive Switching Properties of Directly Bonded SrTiO3 Substrate Ryota Asada, Pham Phu Thanh Son, Kokate Nishad Vasant, Jun Kikkawa, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.) SDM2012-44 |
As one of new non-volatile memory devices, much attention has been paid to the resistive switching memory which has a me... [more] | SDM2012-44 pp.7-12 |
| SDM | 2012-06-21 09:40 |
Aichi | VBL, Nagoya Univ. | Photoexcited Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures Mitsuhisa Ikeda (Hiroshima Univ.), Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2012-45 |
We have studied electron transfer due to internal photoelectric emission in NiSi-Nanodots(NDs)/Si-Quantum-Dots(Si-QDs) h... [more] | SDM2012-45 pp.13-16 |
| SDM | 2012-06-21 10:00 |
Aichi | VBL, Nagoya Univ. | Nanodot-type Floating Gate Memory with High-density Nanodot Array Formed Utilizing Listeria Dps Hiroki Kamitake, Kosuke Ohara, Mutsunori Uenuma, Bin Zheng, Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka (NAIST) SDM2012-46 |
Nanodot-type floating gate memory (NFGM), which has a two dimensional array of nanodots as a floating gate, has attracte... [more] | SDM2012-46 pp.17-21 |
| SDM | 2012-06-21 10:20 |
Aichi | VBL, Nagoya Univ. | High-mobility Ge MOSFETs with ultrathin GeON gate dielectrics Yuya Minoura, Atsushi Kasuya, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2012-47 |
Germanium has recently attracted much attention as a promising channel material for next generation metal-oxide-semicond... [more] | SDM2012-47 pp.23-26 |
| SDM | 2012-06-21 10:55 |
Aichi | VBL, Nagoya Univ. | Clarification of Interfacial Reaction Mechanism in O2 Annealing or O radical Process for Al2O3/Ge Structure Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-48 |
To realize a high performance Ge MOSFET, it is quite important to achieve simultaneously the low interface state density... [more] | SDM2012-48 pp.27-32 |
| SDM | 2012-06-21 11:15 |
Aichi | VBL, Nagoya Univ. | Interface Reaction Control of HfO2/Ge structure by an Insertion of TaOx layer Hideki Murakami, Kento Mishima, Akio Ohta, Kuniaki Hashimoto, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2012-49 |
[more] | SDM2012-49 pp.33-36 |
| SDM | 2012-06-21 11:35 |
Aichi | VBL, Nagoya Univ. | Effect of Reducing Character of Gate Metals on Pr Valence State in Pr Oxide Film on Ge Substrate Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-50 |
We have investigated the impact of the gate metal on the chemical bonding state in the metal/Pr-oxide/Ge gate stack stru... [more] | SDM2012-50 pp.37-42 |
| SDM | 2012-06-21 11:55 |
Aichi | VBL, Nagoya Univ. | Oxygen-induced high-k dielectric degradation in TiN/Hf-based high-k gate stacks Takuji Hosoi, Yuki Odake, Hiroaki Arimura, Keisuke Chikaraishi, Naomu Kitano, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2012-51 |
Effective work function control and equivalent oxide thickness (EOT) scaling are the major concerns for implementing met... [more] | SDM2012-51 pp.43-46 |
| SDM | 2012-06-21 12:15 |
Aichi | VBL, Nagoya Univ. | Evaluation of Al atoms as a function of annealing temperature for (TaC)1-xAlx/HfO2 gate stack Masayuki Kimura (Shibaura Inst. of Tech.), Toshihide Nabatame (NIMS), Hiroyuki Yamada (Shibaura Inst. of Tech.), Akihiko Ohi, Toshihiro Narushima, Toyohiro Chikyow (NIMS), Tomoji Ohishi (Shibaura Inst. of Tech.) |
Al-incorporated TaC ((TaC)1-xAlx) (x=0-0.33)) thin films were used as gate electrode to control Vfb for HfO2 MOS capacit... [more] | |
| SDM | 2012-06-21 13:35 |
Aichi | VBL, Nagoya Univ. | Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method Fumiya Iijima, Kentaro Sawano (TCU), Jiro Ushio (CRL), Takuya Maruizumi, Yasuhiro Shiraki (TCU) SDM2012-52 |
To understand surface segregation behaviour of B, Ga, As, and Sb dopant atoms on Ge (100) and Ge (111) surfaces, the pot... [more] | SDM2012-52 pp.47-51 |
| SDM | 2012-06-21 13:55 |
Aichi | VBL, Nagoya Univ. | Control of Schottky Barrier Height at Al/Ge Junctions by Ultrathin Layer Insertion Akio Ohta, Masafumi Matsui, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2012-53 |
[more] | SDM2012-53 pp.53-58 |
| SDM | 2012-06-21 14:15 |
Aichi | VBL, Nagoya Univ. | Relation between Schottky-barrier change and structural disorders at metal/(Si,Ge) interfaces: First-principles study Kyosuke Kobinata, Takashi Nakayama (Chiba Univ.) SDM2012-54 |
[more] | SDM2012-54 pp.59-62 |
| SDM | 2012-06-21 14:45 |
Aichi | VBL, Nagoya Univ. | Chemical Analysis of As+-implanted Ge(100) Takahiro Ono, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2012-55 |
[more] | SDM2012-55 pp.63-67 |
| SDM | 2012-06-21 15:05 |
Aichi | VBL, Nagoya Univ. | Detection of impurities having various chemical bonding states and their depth profiles in ultra shallow junctions Kazuo Tsutsui, Jun Kanehara, Youhei Miyata (Tokyo Tech.), Hiroshi Nohira (Tokyo City Univ.), Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita (JASRI), Parhat Ahmet, Kuniyuki Kakushima, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2012-56 |
Depth profiles of impurity having different chemical bonding states were evaluated by using soft x-ray photoelectron spe... [more] | SDM2012-56 pp.69-74 |
| SDM | 2012-06-21 15:30 |
Aichi | VBL, Nagoya Univ. | Schottky Barrier Height Lowering by Dopant Segregation and Exact Control of Junction Position in Epitaxial NiSi2 Source/Drain Wataru Mizubayashi, Shinji Migita, Yukinori Morita, Hiroyuki Ota (AIST) SDM2012-57 |
[more] | SDM2012-57 pp.75-80 |
| SDM | 2012-06-21 15:55 |
Aichi | VBL, Nagoya Univ. | Doping and behaviors of impurity atoms in silicon nanowires
-- Segregation behaviors of dopant atoms during thermal oxidation -- Naoki Fukata (NIMS), Ryo Takiguchi, Shinya Ishida, Shigeki Yokono (Univ. of Tsukuba), Takashi Sekiguchi (NIMS), Kouichi Murakami (Univ. of Tsukuba) SDM2012-58 |
In order to realize the next-generation MOSFETs, it is indispensable to realize the size, site, and structure controls i... [more] | SDM2012-58 pp.81-85 |
| SDM | 2012-06-21 16:35 |
Aichi | VBL, Nagoya Univ. | Interface controlled silicide Schottky S/D for future 3D devices Yuta Tamura, Ryo Yoshihara, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech) SDM2012-59 |
This paper presents Ni/Si stacked-structure as interface control for silicidation. An atomically flat $NiSi_2$ film inte... [more] | SDM2012-59 pp.87-92 |
| SDM | 2012-06-21 16:55 |
Aichi | VBL, Nagoya Univ. | Formation of Extremely Thin Ni-InGaAs Alloyed Contact for Scaled InGaAs MOSFETs and its Thermal Stability Toshifumi Irisawa, Minoru Oda, Tsutomu Tezuka (AIST) SDM2012-60 |
Thickness controllability and thermal stability of Ni-InGaAs alloyed contact have been investigated with the aim of the ... [more] | SDM2012-60 pp.93-96 |
| SDM | 2012-06-21 17:15 |
Aichi | VBL, Nagoya Univ. | Alleviation of Fermi level pinning for TiN/Ge contact and its application to MOS device Keisuke Yamamoto, Masatoshi Iyota, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2012-61 |
It has been recognized that the formation of a metal/Ge contact with low electron barrier height and low contact resista... [more] | SDM2012-61 pp.97-102 |
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