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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
HWS, ICD 2022-10-25
15:40
Shiga
(Primary: On-site, Secondary: Online)
Hardware Acceleration of TFHE-based Adder by Controlling Error
Yinfan Zhao, Ikeda Makoto (Univ. of Tokyo) HWS2022-40 ICD2022-32
Fully homomorphic encryption (FHE) is expected to be used in the secure delegating computation. The bootstrapping in the... [more] HWS2022-40 ICD2022-32
pp.58-63
SCE 2012-07-19
10:45
Tokyo Kikai-Shinko-Kaikan Bldg. Design of Circuits Controlling Dependence of Signal Propagation Time on Bias Voltage for Expanding the Operating Margin of SFQ Circuits
Mikio Otsubo, Yuki Yamanashi, Nobuyuki Yoshikawa (YNU) SCE2012-10
Superconductive single flux quantum (SFQ) digital circuits can operate at a clock frequency of several tens GHz. However... [more] SCE2012-10
pp.7-11
ICD 2009-12-14
13:30
Shizuoka Shizuoka University (Hamamatsu) [Poster Presentation] Reducing pattern area technology of 3D transistor for system LSI
Yu Hiroshima, Shigeyoshi Watanabe (Shonan Inst. of Tech.) ICD2009-78
We designed 1 bit Full Adder with FinFET, Double-Gate transistor. FinFET, Double-Gate transistor, Stacked type transisto... [more] ICD2009-78
pp.13-18
SDM, ED 2009-06-25
09:00
Overseas Haeundae Grand Hotel, Busan, Korea [Invited Talk] Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
Yasuo Takahashi, Takuya Kaizawa, Mingyu Jo, Masashi Arita (Hokkaido Univ.), Akira Fujiwar, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.) ED2009-83 SDM2009-78
We demonstrate a highly functional Si nanodot array device that operates by means of single-electron effects. The device... [more] ED2009-83 SDM2009-78
pp.145-148
VLD 2009-03-13
15:15
Okinawa   Reduced pattern area technology of 3D transistor for system LSI
Yu Hiroshima, Shigeyoshi Watanabe (Shonan Inst. of Tech.) VLD2008-167
We designed 1 bit Full Adder with FinFET, Double-Gate transistor. FinFET, Double-Gate transistor, Stacked type transisto... [more] VLD2008-167
pp.243-248
CAS, SIP, VLD 2005-06-28
14:50
Miyagi Tohoku University Complementary Ferroelectric Capacitor Logic and its Application to Fully Parallel Arithmetic VLSI
Shoun Matsunaga, Takahiro Hanyu (Tohoku Univ.)
In this paper, we propose a Complementary Ferroelectric Capacitor Logic-in-Memory circuit that makes it possible easily ... [more] CAS2005-25 VLD2005-36 SIP2005-49
pp.61-65
 Results 1 - 6 of 6  /   
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