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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MW | 2024-01-25 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Electron State Analysis under Al2O3 Gate Oxide film in EID AlGaN/GaN MOS-HEMT Takuma Nanjo, Akira Kiyoi, Takashi Imazawa, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (Nagoya Inst. of Tech)  ED2023-68 MW2023-160 |
(To be available after the conference date) [more] | ED2023-68 MW2023-160 pp.11-14 |
| MW, ED | 2023-01-27 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Demonstration of high current and high voltage E-mode operation in EID AlGaN/GaN MOS-HEMT Takuma Nanjo, Tomohiro Shinagawa, Tatsuro Watahiki, Naruhisa Miura, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (NITech) ED2022-93 MW2022-152 |
(To be available after the conference date) [more] | ED2022-93 MW2022-152 pp.36-39 |
| LQE, CPM, ED | 2020-11-26 15:50 |
Online | Online | GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3 Low Rui Shan, Itsuki Nagase, Ali Baratov, Joel Tacla Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.), Zenji Yatabe, Kenta Naito, Motoyama Tomohiro, Yusui Nakamura (Kumamoto Univ.) ED2020-13 CPM2020-34 LQE2020-64 |
We have fabricated AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using Al2O3 ga... [more] | ED2020-13 CPM2020-34 LQE2020-64 pp.49-52 |
| LQE, CPM, ED | 2020-11-27 11:20 |
Online | Online | Improved performance in GaN-based HEMTs with insulated gate structures Ali Baratov, Takashi Ozawa, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-16 CPM2020-37 LQE2020-67 |
Several groups have reported improved performance in GaN-based transistors employing metal-insulator-semiconductor (MIS)... [more] | ED2020-16 CPM2020-37 LQE2020-67 pp.60-62 |
| LQE, CPM, ED | 2017-11-30 15:50 |
Aichi | Nagoya Inst. tech. | Low-damage etching of nitride semiconductors utilizing photo-electrochemical reactions for electron devices Keisuke Uemura, Satoru Matsumoto, Masachika Toguchi, Keisuke Ito, Taketomo Sato (Hokkaido Univ.) ED2017-54 CPM2017-97 LQE2017-67 |
The photo-electrochemical oxidation and etching process was demonstrated in view of the damage-free etching for GaN and ... [more] | ED2017-54 CPM2017-97 LQE2017-67 pp.23-26 |
| CPM, LQE, ED | 2016-12-12 16:10 |
Kyoto | Kyoto University | AlGaN/GaN HEMTs with High Breakdown Voltage and High Drain Current Yudai Suzuki, Taisei Yamazaki, Shinya Makino, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara (Univ.Fukui) ED2016-64 CPM2016-97 LQE2016-80 |
We have studied the characteristics of off-state breakdown voltage and on-state resistance of large gate-periphery AlGaN... [more] | ED2016-64 CPM2016-97 LQE2016-80 pp.35-39 |
| CPM, LQE, ED | 2016-12-12 16:35 |
Kyoto | Kyoto University | Reduced Current Collapse in AlGaN/GaN HEMTs with a 3-Dimensional Field Plate Suzuki Atsuya, Joel Asubar, Tokuda Hirokuni, Kuzuhara Masaaki (Univ. Fukui) ED2016-65 CPM2016-98 LQE2016-81 |
We have fabricated a novel AlGaN/GaN HEMT with a multi-grooved and fin-shaped gate field-plate (G-FP), and studied its e... [more] | ED2016-65 CPM2016-98 LQE2016-81 pp.41-44 |
| MW | 2016-11-18 11:20 |
Saga | Saga Univ. | Effect of buffer trap on low-frequency equivalent circuit parameters of GaN HEMTs Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.) MW2016-128 |
To examine the effect of the traps in the GaN HEMT, equivalent circuit parameters in the low-frequency was measured. Res... [more] | MW2016-128 pp.69-72 |
| ED, LQE, CPM | 2015-11-27 11:40 |
Osaka | Osaka City University Media Center | Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate Yuya Yamaoka (TNSC), Kazuhiro Ito (NITech), Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto (TNSC), Takashi Egawa (NITech) ED2015-83 CPM2015-118 LQE2015-115 |
In this study, two types of single AlN on Si substrates were grown using different growth conditions. A scanning electro... [more] | ED2015-83 CPM2015-118 LQE2015-115 pp.77-80 |
| SDM | 2015-06-19 09:30 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Interface states characterization of Al2O3/AlGaN/GaN structures Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) SDM2015-38 |
To characterize interface properties of Al2O3-insulated gates on AlGaN/GaN structures with and without (w/o) ICP etching... [more] | SDM2015-38 pp.1-4 |
| CPM, ED, SDM | 2014-05-28 16:30 |
Aichi | Chemical Vapor Deposition of Silicon Nitride Films Enhanced by Surface-Wave Plasma and Electron Device Application Kyohei Kawakami, Takahiro Ishimaru, Masatoshi Shinohara, Hiroshi Okada (Toyohashi Tech), Masakzu Furukawa (Aries Research Group), Akihiro Wakahara, Hiroto Sekiguchi (Toyohashi Tech) ED2014-29 CPM2014-12 SDM2014-27 |
New chemical vapor deposition technique using surface-wave plasma is proposed, and silicon nitride film deposition is ma... [more] | ED2014-29 CPM2014-12 SDM2014-27 pp.55-58 |
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| MW, ED | 2013-01-18 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of drain leakage current in AlGaN/GaN HEMT Kazuo Hayashi, Toshiyuki Oishi, Yoshitaka Kamo, Yutaro Yamaguchi, Hiroshi Otsuka, Koji Yamanaka, Masatoshi Nakayama (Mitsubishi Electric Corp.), Yasuyuki Miyamoto (Tokyo Institute of Technology) ED2012-125 MW2012-155 |
Traps in GaN layer of AlGaN/GaN HEMTs have been studied by using both experimental data and TCAD simulation. Two traps w... [more] | ED2012-125 MW2012-155 pp.69-74 |
| ED, LQE, CPM | 2012-11-29 15:25 |
Osaka | Osaka City University | Effects of process conditions on AlGaN/GaN hetero-MOS structures Yujin Hori, Zenji Yatabe, Wan-Cheng Ma, Tamotsu Hashizume (Hokkaido Univ.) ED2012-74 CPM2012-131 LQE2012-102 |
We have characterized effects of process conditions on Al2O3/AlGaN/GaN hetero-MOS structures prepared by atomic layer de... [more] | ED2012-74 CPM2012-131 LQE2012-102 pp.37-40 |
| ED, LQE, CPM | 2012-11-29 16:15 |
Osaka | Osaka City University | Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2012-76 CPM2012-133 LQE2012-104 |
AlGaN/GaN HEMTs with different passivation layers were studied using pulsed I-V system. The maximum drain current showed... [more] | ED2012-76 CPM2012-133 LQE2012-104 pp.45-50 |
| MW, ED | 2011-01-14 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Two-Dimensional Analysis of Backside-Electrode and Gate-Field-Plate Effects on Buffer-Related Current Collapse in AlGaN/GaN HEMTs Hiraku Onodera, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2010-183 MW2010-143 |
Two-dimensional transient analysis of gate-field-plate AlGaN/GaN HEMTs with a backside electrode is performed in which a... [more] | ED2010-183 MW2010-143 pp.45-50 |
| ED | 2010-06-17 14:50 |
Ishikawa | JAIST | Electrical Characterization of Recessed-gate AlgaN/GaN Heterojunction FETs Misato Mukohno, Naoki Yamada, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui.) ED2010-37 |
Recessed-gate AlGaN/GaN HFETs have been fabricated by using BCl3-based ICP dry-etching. It was confirmed that the thresh... [more] | ED2010-37 pp.21-24 |
| ED | 2010-06-17 15:15 |
Ishikawa | JAIST | Fabrication of high-frequency and high-power AlGaN/GaN HEMTs Yoshimi Yamashita, Issei Watanabe, Akira Endoh, Nobumitsu Hirose, Toshiaki Matsui (NICT), Takashi Mimura (NICT/Fujitsu lab.) ED2010-38 |
High-power AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and... [more] | ED2010-38 pp.25-30 |
| ED, LQE, CPM | 2009-11-20 10:20 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Characterization of quaternary InAlGaN/GaN HEMT epi-structures fabricated on 4inch diameter Si substrates Mikiya Ichimura, Makoto Miyoshi, Mitsuhiro Tanaka (NGK Insulators, Ltd.), Takashi Egawa (Nagoya Inst. of Tech.) ED2009-149 CPM2009-123 LQE2009-128 |
MOCVD growth and material characterization of quaternary InAlGaN/GaN HEMT structures, which allow for various combinatio... [more] | ED2009-149 CPM2009-123 LQE2009-128 pp.99-103 |
| ED, LQE, CPM | 2009-11-20 14:00 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | High breakdown voltage of AlGaN/GaN HEMTs on Si substrates Takaaki Suzue, Lawrence Selvaraj, Takashi Egawa (Nagoya Inst. of Tech.) ED2009-155 CPM2009-129 LQE2009-134 |
We have studied the breakdown characteristics of thick AlGaN/GaN HEMTs on Si substrate with multilayer structure. The br... [more] | ED2009-155 CPM2009-129 LQE2009-134 pp.129-132 |
| ED, LQE, CPM | 2009-11-20 15:50 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Output characteristics of AlGaN/GaN HEMTs at 60 GHz frequency band Issei Watanabe, Akira Endoh, Yoshimi Yamashita, Nobumitsu Hirose (NICT), Takashi Mimura (NICT/Fujitsu Labs.), Toshiaki Matsui (NICT) ED2009-159 CPM2009-133 LQE2009-138 |
AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and long-range... [more] | ED2009-159 CPM2009-133 LQE2009-138 pp.151-155 |
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