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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2024-01-25
15:55		 Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)		 Development of GaN HEMT using a diamond substrate as a heat spreader
Yusuke Shirayanagi (Mitsubishi Electric/Kumamoto Univ.), Shingo Tomohisa (Mitsubishi Electric), Keiji Kasamura, Hiroki Toyoda (Kumamoto Univ.), Takashi Matsumae, Yuichi Kurashima, Hideki Takagi (AIST), Akihisa Kubota (Kumamoto Univ.), Takashi Takenaga (Mitsubishi Electric) ED2023-69 MW2023-161		 1-inch size GaN-on-Diamond high electron mobility transistors (GoD HEMTs) has been successfully fabricated using surface... [more] ED2023-69 MW2023-161
pp.15-18
ICD 2013-04-11
09:50		 Ibaraki Advanced Industrial Science and Technology (AIST) [Invited Talk] A Novel MTJ for STT-MRAM with a Dummy Free Layer and Dual Tunnel Junctions
Koji Tsunoda, Hideyuki Noshiro, Chikako Yoshida, Yuuichi Yamazaki, Atsushi Takahashi, Yoshihisa Iba, Akiyoshi Hatada, Masaaki Nakabayashi, Takashi Takenaga, Masaki Aoki, Toshihiro Sugii (LEAP) ICD2013-2		 A novel magnetic tunnel junction (MTJ) for embedded memory applications such as spin transfer torque magneto-resistive r... [more] ICD2013-2
pp.5-10
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