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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2024-01-25
14:00		 Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)		 Reduction of Wafer Warpage in GaAs Semiconductor Process
Koichiro Nishizawa (Mitsubishi Electric), Ayumu Matsumoto, Naoki Fukumuro (University of Hyogo), Yasuyuki Nakagawa, Takayuki Hisaka, Hitoshi Sakuma, Yoshiki Kojima (Mitsubishi Electric), Shinji Yae (University of Hyogo) ED2023-65 MW2023-157		 The Ni-P plating film used for the back electrode of GaAs semiconductors has high stress, which is a factor in wafer war... [more] ED2023-65 MW2023-157
pp.1-3
R, ED, SDM 2005-11-25
15:05		 Osaka Central Electric Club --
Yoichi Nogami, Takayuki Hisaka, Naohito Yoshida (Mitsubishi) 		We have studied the degradation mechanisms of AlGaAs/InGaAs pseudomorphic HEMTs (PHEMTs) under high humidity conditions.... [more] R2005-44 ED2005-179 SDM2005-198
pp.37-41
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