Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MW, EMCJ |
2008-10-24 11:50 |
Yamagata |
Yamagata Univ. |
Development of a Low-cost Up-converter MMIC for Ku-band VSAT Transmitter Shinya Mizuno, Miki Kubota, Tomio Satoh, Yuichi Hasegawa (Eudyna) EMCJ2008-73 MW2008-117 |
We developed an Up-converter MMIC in Plastic-Molded QFN Package for Ku-band VSAT transmitter. Using a general QFN Packag... [more] |
EMCJ2008-73 MW2008-117 pp.81-85 |
MW |
2008-08-29 15:00 |
Osaka |
Osaka-Univ. (Toyonaka) |
A kW-class AlGaN/GaN HEMT Pallet Amplifier for S-band High Power Application Makoto Aojima, Eizo Mitani, Seigo Sano (EUD) MW2008-100 |
We developed a kW-class AlGaN/GaN HEMT Pallet Amplifier operating at S-band. The pallet Amplifier consists of an interna... [more] |
MW2008-100 pp.119-122 |
OPE, LQE |
2008-06-27 16:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
High-Power Single-Stripe Full-Band Tunable Laser Using Tunable Reflector with Wavelength-Filter Function Tsutomu Ishikawa, Toyotoshi Machida, Hirokazu Tanaka, Toshimitsu Kaneko, Yoshiki Oka, Mikio Tajima, Hajime Shoji, Takuya Fujii (EUD) OPE2008-29 LQE2008-30 |
Full-band tunable lasers with monolithically-integrated single-stripe structure are key devices for low-cost and high-ca... [more] |
OPE2008-29 LQE2008-30 pp.51-56 |
OPE, CPM, R |
2008-04-18 14:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Low-Power Consumption and Low-Aspect Ratio Laser Diodes Makoto Ueda, Hiroyuki Sumitomo, Shu Goto, Toru Yamamoto, Hiroyuki Oguri, Satoshi Kajiyama, Kensei Nakao, Hidenori Amano, Hirotada Satoyoshi, Toshihiro Kita, Shigekazu Izumi (Eudyna Devices) R2008-4 CPM2008-4 OPE2008-4 |
We have developed low-power consumption and low-aspect ratio laser diodes (LDs) by using ridge waveguide structure. The ... [more] |
R2008-4 CPM2008-4 OPE2008-4 pp.17-22 |
ED, MW |
2008-01-16 14:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
GaN HEMT Doherty Amplifiers for W-CDMA and WiMAX Base Station Applications Hiroaki Sano, Norihiko Ui, Seigo Sano (Eudyna Devices) ED2007-209 MW2007-140 |
Two types of Doherty amplifiers for mobile communication base stations have been developed using GaN HEMTs biased at dra... [more] |
ED2007-209 MW2007-140 pp.17-22 |
ED, MW |
2008-01-16 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
An 87W AlGaN/GaN HEMT for X-band Pulse Operation Makoto Nishihara, Takashi Tamamoto, Kazutaka Inoue, Masahiro Nishi, Seigo Sano (Eudyna) ED2007-211 MW2007-142 |
In this paper, we report our result of a 60W AlGaN/GaN HEMT with the operating frequency in X-band. The device technolog... [more] |
ED2007-211 MW2007-142 pp.29-31 |
SDM, R, ED |
2007-11-16 15:45 |
Osaka |
|
Leakage Current Screening for AlGaN/GaN HEMT Mass-Production Fumikazu Yamaki, Kazuaki Ishii, Masahiro Nishi, Hitoshi Haematsu, Yasunori Tateno, Haruo Kawata (EUD) R2007-52 ED2007-185 SDM2007-220 |
[more] |
R2007-52 ED2007-185 SDM2007-220 pp.33-37 |
CPM, ED, LQE |
2007-10-12 09:50 |
Fukui |
Fukui Univ. |
Low leakage current ITO schottky electrode for AlGaN/GaN HEMT Keita Matsuda, Takeshi Kawasaki, Ken Nakata, Takeshi Igarashi, Seiji Yaegashi (Eudyna Devices) ED2007-167 CPM2007-93 LQE2007-68 |
AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] |
ED2007-167 CPM2007-93 LQE2007-68 pp.57-61 |
ED |
2007-06-15 13:00 |
Toyama |
Toyama Univ. |
0.10 um Ion-Implanted GaAs MESFETs with Low Cost Production Process Masataka Watanabe, Daiji Fukushi, Hiroshi Yano, Shigeru Nakajima (Eudyna Devices) ED2007-31 |
We have successfully fabricated 0.1 µm gate GaAs MESFETs using a low cost process. The result was obtained from op... [more] |
ED2007-31 pp.1-5 |
ED, CPM, LQE |
2006-10-05 13:25 |
Kyoto |
|
Improvement of Breakdown Voltage of AlGaN/GaN HEMT Ken Nakata, Takeshi Kawasaki, Keita Matsuda, Takeshi Igarashi, Seiji Yaegashi (Eudyna) |
AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] |
ED2006-153 CPM2006-90 LQE2006-57 pp.7-12 |
MW |
2006-09-06 16:00 |
Tokyo |
|
[Invited Talk]
- Tsuneo Tokumitsu (EUD) |
This invited talk describes my history, first, which brought myself in to a position to be nominated for IEEE Fellow. Al... [more] |
MW2006-102 pp.151-159 |
R, CPM, OPE |
2006-04-21 14:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
High-Power Laser Diodes for DVD-R/RW/RAM by 4-inch Full-Wafer Process Technology Hiroyuki Sumitomo, Satoshi Kajiyama, Hiroyuki Oguri, Takeshi Sakashita, Shinichi Domoto, Kensei Nakao, Toru Yamamoto, Tutomu Komatani, Hiroshi Kawakubo, Masanori Ono, Toshiaki Maejima, Shigekazu Izumi (EUD) |
We have successfully fabricated 650-nm band single lateral-mode high-power laser diodes (LDs) by using the 4-inch full-w... [more] |
R2006-5 CPM2006-5 OPE2006-5 pp.23-28 |
AP |
2006-02-16 11:45 |
Kanagawa |
Toshiba Kenshuu Center(Yokohama) |
Design and Measurement of a Circular Dielectric Window in an Absorber over a Patch Antenna for the Millimeter wave Media Converter Kaoru Sudo, Jiro Hirokawa, Makoto Ando (Tokyo Tech.), Hiroshi Nakano (Eudyna Devices), Yoshihiko Okada (WICERA), Yasutake Hirachi (Tokyo Tech.) |
A microstrip patch antenna (MSA) is investigated for the gain improvement by a dielectric cover, which will be applied t... [more] |
AP2005-162 pp.19-24 |
ED, MW |
2006-01-20 16:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Special Talk]
A Report on the 35th European Microwave Conference Tetsuo Anada (Kanagawa University), Hiroshi Kubo (Yamaguchi University), Futoshi Kuroki (Kure National College of Technology), Hiroyuki Deguchi (Doshisha University), Hiromitsu Uchida, Tamotsu Nishino, Koji Yamanaka (Mitsubishi), (Eudyna), Munenari Kawashima (NTT) |
he Microwave week 2005 including the 35th European Microwave Conference, European GAAS and other Compound Semiconductors... [more] |
ED2005-223 MW2005-177 pp.81-86 |
LQE, ED, CPM |
2005-10-13 14:30 |
Shiga |
Ritsumeikan Univ. |
Normally-off AlGaN/GaN HEMT with Recessed Gate for High Power Applications Ken Nakata, Takeshi Kawasaki, Seiji Yaegashi (Eudyna Device Inc.) |
AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] |
ED2005-129 CPM2005-116 LQE2005-56 pp.51-56 |
RCS, AP, WBS, MW, MoNA |
2005-03-02 09:20 |
Kanagawa |
Yokosuka Research Park |
- Yasuharu Takase (Aoyama Gakuin Univ.), Yoshihiko Okada (WICERA), Yasutake Hirachi (EUD), Osamu Hashimoto (Aoyama Gakuin Univ.) |
For improvement of electromagnetic(EM) environment of the millimeter-wave band media converter used for the car radar at... [more] |
WBS2004-78 AP2004-259 RCS2004-346 MoMuC2004-129 MW2004-256 pp.131-134 |
RCS, AP, WBS, MW, MoNA |
2005-03-02 09:40 |
Kanagawa |
Yokosuka Research Park |
- Taketo Kumada (Aoyama Gakuin Univ.), Yoshihiko Okada (WICERA), Yasutake Hirachi (EUD), Osamu Hashimoto (Aoyama Gakuin Univ.) |
[more] |
WBS2004-79 AP2004-260 RCS2004-347 MoMuC2004-130 MW2004-257 pp.135-139 |
AP |
2005-01-20 10:20 |
Saga |
Saga University |
FDTD Analysis and Design of a Dielectric Window in an Absorber over a Patch Antenna Takao Nakagawa, Jiro Hirokawa, Makoto Ando (Tokyo Tech), Hiroshi Nakano, Yasutake Hirachi (Eudyna Devices) |
We design a dielectric window placed in an absorber plate for development of a low cost module at millimeter wave. Gain ... [more] |
AP2004-198 pp.13-18 |
MW, ED |
2005-01-18 14:50 |
Tokyo |
|
- Arata Maekawa, Takashi Tamamoto, Kazutaka Inoue, -, Seigo Sano, Shintaro Takase (EUD) |
[more] |
ED2004-222 MW2004-229 pp.59-63 |