|
|
| Chair |
|
Hiroshige Hirano (TowerPartners Semiconductor) |
| Vice Chair |
|
Shunichiro Ohmi (Tokyo Inst. of Tech.) |
| Secretary |
|
Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.) |
| Assistant |
|
Taiji Noda (Panasonic), Tomoyuki Suwa (Tohoku Univ.) |
|
| Conference Date |
Tue, Jun 21, 2022 13:00 - 18:00 |
| Topics |
Material Science and Process Technology for MOS Devices, Memories, and Power Devices |
| Conference Place |
|
Contact
Person |
Takuji Hosoi (Kwansei Gakuin Univ.) |
| Sponsors |
This conference is co-sponsored by The Japan Society of Applied Physics.
|
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Registration Fee |
This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM. |
Tue, Jun 21 PM
13:00 - 18:00 |
| (1) |
13:00-13:40 |
[Invited Talk]
Superiority of counter-doped MOSFET from the viewpoint of oxide/4H-SiC interface property  SDM2022-24 |
Shigehisa Shibayama, Takuma Doi, Mitsuo Sakashita, Noriyuki Taoka (Nagoya Univ.), Mitsuaki Shimizu (AIST), Osamu Nakatsuka (Nagoya Univ.) |
| (2) |
13:40-14:00 |
Self-formation of Ge1-xSnx nanodots on insulator for multi-layer Ge1-xSnx quantum dots structure SDM2022-25 |
Kaoru Hashimoto, Shigehisa Shibayama, Koji Asaka, Osamu Nakatsuka (Nagoya Univ.) |
| (3) |
14:00-14:20 |
Impacts of Surface Orientation of Si Substrate on Crystalline Structures and Chemical Composition of Hf-oxide Layers Formed by Post Oxidation SDM2022-26 |
Wataru Yasuda, Noriyuki Taoka, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) |
| |
14:20-14:30 |
Break ( 10 min. ) |
| (4) |
14:30-15:10 |
[Invited Lecture]
Study on the next-generation high frequency deivices using operando nano x-ray spectroscopy SDM2022-27 |
Hirokakazu Fukidome (Tohoku Univ.) |
| (5) |
15:10-15:50 |
[Invited Lecture]
Study on TMD mixed crystal characteristics and novel precursor for low-temperature CVD. SDM2022-28 |
Atsushi Ogura, Ryo Yokogawa (Meiji Univ., MREL), Hitoshi Wakabayashi (Tokyo Tech.) |
| (6) |
15:50-16:30 |
[Invited Lecture]
Electronic properties of heterostructures of transition metal dichalchogenides SDM2022-29 |
Mina Maruyama (Univ. of Tsukuba) |
| |
16:30-16:40 |
Break ( 10 min. ) |
| (7) |
16:40-17:20 |
[Invited Talk]
Low Voltage Operation of CMOS Inverter based on WSe2 n/p FETs SDM2022-30 |
Takamasa Kawanago, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi (Tokyo Tech) |
| (8) |
17:20-17:40 |
Formation of Ultra-Thin Nickel Silicide Layer with controlled Surface Morphology and Crystalline Phase on SiO2 SDM2022-31 |
Keisuke Kimura, Noriyuki Taoka, Shunsuke Nishimura, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya. Univ) |
| (9) |
17:40-18:00 |
Formation of Al(111) Thin Layer on Si(111) and Control of Surface Si Segregation by Thermal Annealing SDM2022-32 |
Taiki Sakai, Keigo Matsushita, Akio Ohta, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Invited Talk | Each speech will have 35 minutes for presentation and 5 minutes for discussion. |
| Invited Lecture | Each speech will have 35 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
SDM Secretary: MORI Takahiro(National Institute of AIST)
Tel +81-29-849-1149
E-Mail   -    aist |
Last modified: 2022-05-09 12:05:56
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