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電子デバイス研究会(ED) [schedule] [select]
専門委員長 葛原 正明 (福井大)
副委員長 橋詰 保 (北大)
幹事 高谷 信一郎 (日立), 村田 浩一 (NTT)
幹事補佐 原 直紀 (富士通研), 津田 邦男 (東芝)

シリコン材料・デバイス研究会(SDM) [schedule] [select]
専門委員長 渡辺 重佳 (湘南工科大)
副委員長 杉井 寿博 (富士通マイクロエレクトロニクス)
幹事 川中 繁 (東芝), 安斎 久浩 (ソニー)
幹事補佐 大見 俊一郎 (東工大)

() [schedule] [select]

日時 2008年 7月 9日(水) 10:00 - 17:50
2008年 7月10日(木) 09:00 - 11:55
2008年 7月11日(金) 09:00 - 16:05
議題 第16回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2008) 
会場名 かでる2・7(札幌市) 
住所 〒060-0002 札幌市中央区北2条7丁目
交通案内 JR札幌駅から徒歩10分
http://www.kaderu27.or.jp/index.htm
他の共催 ◆共催 The Institute of Electronics Engineers of Korea (IEEK)
お知らせ ◎協賛 IEEE Electron Devices Society (EDS) Japan Chapter, IEICE Electronics Society, Global COE Program of Center for Next-Generation Information Technology based on Knowledge Discovery and Knowledge Federation (Hokkaido University)
著作権に
ついて
以下の論文すべての著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

7月9日(水) 午前  プレナリセッション
10:00 - 10:40
(1) 10:00-10:40 [基調講演]III-V Semiconductor Epitaxial Nanowires and Their Applications ED2008-39 SDM2008-58 Takashi FukuiShinjiro HaraKenji HirumaJunichi MotohisaHokkaido Univ.
  10:40-10:50 休憩 ( 10分 )
7月9日(水) 午前  セッション 1: Compound Semiconductor Devices
10:50 - 12:20
(1) 10:50-11:15 [招待講演]Growth of InAs quantum dot and device application Il-Ki HanKIST
(2) 11:15-11:40 [招待講演]Narrow-gap III-V Semiconductor Technology: Lattice-Mismatched Growth and Epitaxial Lift-off for Heterogeneous Integration ED2008-40 SDM2008-59 Toshi-kazu SuzukiJAIST
(3) 11:40-12:05 [招待講演]AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer ED2008-41 SDM2008-60 Tadayoshi DeguchiNew Japan Radio)・Takashi EgawaNagoya Inst. of Tech.
(4) 12:05-12:20 Properties of GaN MIS Capacitors Using Al2O3 as Gate Dielectric Deposited by Remote Plasma Atomic Layer Deposition ED2008-42 SDM2008-61 Hyeong-Seon YunKa-Lam KimNo-Won KwakWoo-Seok LeeSang-Hyun JeongCheongju Univ.)・Ju-Ok SeoItswell)・Kwang-Ho KimCheongju Univ.
  12:20-13:20 昼食 ( 60分 )
7月9日(水) 午後  セッション 2: Silicon Devices I
13:20 - 15:45
(1) 13:20-13:45 [招待講演]Guidelines for the Threshold Voltage Control of Metal/HfSiON system ED2008-43 SDM2008-62 Akira NishiyamaYoshinori TsuchiyaMasahiko YoshikiAtsuhiro KinoshitaJunji KogaMasato KoyamaToshiba
(2) 13:45-14:10 [招待講演]Precise Ion Implantation for Advanced MOS LSIs ED2008-44 SDM2008-63 Toshiharu SuzukiSEN
(3) 14:10-14:35 [招待講演]Quantum Modeling of Carrier Transport through Silicon Nano-devices ED2008-45 SDM2008-64 Nobuya MoriHideki MinariOsaka Univ.
(4) 14:35-15:00 [招待講演]High-K Dielectric for Charge Trap-type Flash Memory Application ED2008-46 SDM2008-65 Byung-Jin ChoKAIST)・Wei HeJing PuNational Univ. of Singapore
(5) 15:00-15:15 Characteristics of Locally-Separated Channel FinFETs with Non-Overlapped Source/Drain to Gate for Sub-50 nm DRAM Cell Transistors ED2008-47 SDM2008-66 Han-A JungKi-Heung ParkKyungpook National Univ.)・Hyuck-In KwonDaegu Univ. Jillyang)・Jong-Ho LeeKyungpook National Univ.
(6) 15:15-15:30 A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation ED2008-48 SDM2008-67 Hiroshi ImaiTohoku Univ.)・Masahiko SugimuraMasafumi KawasakiZeon)・Akinobu TeramotoShigetoshi SugawaTadahiro OhmiTohoku Univ.
(7) 15:30-15:45 CMOS phase shift Oscillator Using the Conduction of Heat ED2008-86 SDM2008-105 Takaaki HiraiTetsuya AsaiYoshihito AmemiyaHokkaido univ.
  15:45-15:55 休憩 ( 10分 )
7月9日(水) 午後  セッション 3: Emerging Devices I
15:55 - 17:50
(1) 15:55-16:20 [招待講演]Characterization of Carbon Nanotube FETs by Electric Force Microscopy ED2008-49 SDM2008-68 Takashi MizutaniNagoya Univ.
(2) 16:20-16:45 [招待講演]Recent Progress on Nanoprobe and Nanoneedle ED2008-50 SDM2008-69 Masaki TanemuraMasashi KitazawaYoshitaka SugitaAko MiyawakiMasaki KutsunaYasuhiko HayashiNagoya Inst. of Tech.)・Shu Ping LauNanyang Tech. Univ.
(3) 16:45-17:10 [招待講演]Technical Issues and Applications of Printed Thin-Film Devices ED2008-51 SDM2008-70 Yongtaek HongJaewook JeongJinwoo KimSanbwoo KimMinkyoo KwonSeungjun ChungSeoul National Univ.
(4) 17:10-17:35 [招待講演]A Ta2O5 Solid-electrolyte Switch with Improved Reliability ED2008-52 SDM2008-71 Naoki BannoToshitsugu SakamotoNoriyuki IguchiShinji FujiedaNEC Corp.)・Kazuya TerabeTsuyoshi HasegawaMasakazu AonoNIMS
(5) 17:35-17:50 Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation ED2008-53 SDM2008-72 Sang Hyuk ParkSangwoo KangDong-Seup LeeJung Han LeeHong-Seon YangKwon-Chil KangJoung-Eob LeeJong Duk LeeByung-Gook ParkSeoul National Univ.
7月10日(木) 午前  セッション 4A: Nonvolatile Memory
09:00 - 10:30
(1) 09:00-09:15 Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories ED2008-54 SDM2008-73 Kazuhiro ShimanoeKatsunori MakiharaMitsuhisa IkedaSeiichi MiyazakiHiroshima Univ.
(2) 09:15-09:30 Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memories ED2008-55 SDM2008-74 Doo-Hyun KimIl Han ParkByung-Gook ParkSeoul National Univ.
(3) 09:30-09:45 3-dimensional Terraced NAND(3D TNAND) Flash Memory ED2008-56 SDM2008-75 Yoon KimGil-Seong LeeJong Duk LeeHyungcheol ShinByung-Gook ParkSeoul National Univ.
(4) 09:45-10:00 Design of Unique two-bit/cell SONOS Flash Memory Device Utilizing an Advanced Saddle Structure ED2008-57 SDM2008-76 Sang-Su ParkSe Woong OhKyeong Rok KimHyun Joo KimTae Whan KimKae Dal KwackHanyang Univ.
(5) 10:00-10:15 Using shielding metal for elimination of floating gate coupling effect Gil-Sung LeeSeoul National Univ.
(6) 10:15-10:30 Design of Vertical Nonvolatile Memory Device Considering Gate-Induced Barrier Lowering(GIBL) ED2008-58 SDM2008-77 Seongjae ChoIl Han ParkJung Hoon LeeGil Sung LeeJong Duk LeeHyungcheol ShinByung-Gook ParkSeoul National Univ.
  10:30-10:40 休憩 ( 10分 )
7月10日(木) 午前  セッション 5A: Silicon Devices II
10:40 - 11:55
(1) 10:40-10:55 Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor ED2008-59 SDM2008-78 Tetsuo EndohKousuke TanakaYuto NorifusaTohoku Univ.
(2) 10:55-11:10 Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism ED2008-60 SDM2008-79 Yuto NorifusaTetsuo EndohTohoku Univ.
(3) 11:10-11:25 Current Transport Characteristics for Organic Nonvolatile Memories ED2008-61 SDM2008-80 Woo-Sik NamGon-Sub LeeSung-Ho SeoYoung-Hwan OhJae-Gun ParkHanyang Univ.
(4) 11:25-11:40 Observation of hexagonal nuclei in the melt-quenched Ge2Sb2Te5 thin films Min-Soo YoumKIST
(5) 11:40-11:55 Microstructural and electrical characteristics of Ge1Te1 alloy Yong-Tae KimKIST
7月10日(木) 午前  セッション 4B: Emerging Devices II
09:00 - 10:15
(1) 09:00-09:15 Single-Electron-Resolution Electrometer Based on Field-Effect Transistor ED2008-62 SDM2008-81 Katsuhiko NishiguchiCharlie KoechlinYukinori OnoAkira FujiwaraHiroshi InokawaHiroshi YamaguchiNTT
(2) 09:15-09:30 Charge Injection Path of Bottom-Contact Organic Thin-Film Transistors ED2008-63 SDM2008-82 Yoo Chul KimKeum-Dong JungJong Duk LeeByung-Gook ParkSeoul National Univ.
(3) 09:30-09:45 Self-Aligned Conducting Polymer Patterns Coated with Carbon Nanotube Using Soft Lithography for Transparent Flexible Electrode of OTFT ED2008-64 SDM2008-83 Jin-Woo HuhJin-Woo HuhJin-Wook JeongHo-Gyu YoonKorea Univ.)・Sang Ho KimLG Chem.)・Byeong-Kwon JuKorea Univ.
(4) 09:45-10:00 Self-Assembled Carbon Nanotube Network Films Field Effect Transistor for Biosensor Application ED2008-65 SDM2008-84 Sunhaera ShinYoun-Kyoung BaekYang-Kyu ChoiHee-Tae JungKAIST
(5) 10:00-10:15 2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implemention of Nanoprocessor on GaAs Nanowire Network ED2008-66 SDM2008-85 Hong-Quan ZhaoHokkaido Univ.)・Seiya KasaiHokkaido Univ./JST)・Tamotsu HashizumeHokkaido Univ.
  10:15-10:25 休憩 ( 10分 )
7月10日(木) 午前  セッション 5B: Emerging Devices III
10:25 - 11:55
(1) 10:25-10:40 Fabrication of Silicon Nanowire Devices using AC Dielectrophoresis ED2008-67 SDM2008-86 Su-Heon HongMyung-Gil KangKorea Univ.)・Dong-Mok WhangSungkyunkwan Univ.)・Sung-Woo HwangKorea Univ.
(2) 10:40-10:55 A Study on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) (PEDOT:PSS) Films for The Microbolometer Applications ED2008-68 SDM2008-87 Hyeok Jun SonIl Woong KwonKAIST)・Ho Jun YouETRI)・Yong Soo LeeHee Chul LeeKAIST
(3) 10:55-11:10 Electrical Detection of Si-Tagged Proteins on HF-last Si(100) and Thermally Grown SiO2 Surfaces ED2008-69 SDM2008-88 S. MahboobKatsunori MakiharaHirotaka KakuMitsuhisa IkedaSeiichiro HigashiSeiichi MiyazakiAkio KurodaHiroshima Univ.
(4) 11:10-11:25 Fabrication of methanol concentration sensor by using Pt dot catalyst electrode Seong-Il KimKIST
(5) 11:25-11:40 Fabrication and characterization of silicon nanowire-based biosensor Young-Soo SohnKIST
(6) 11:40-11:55 An Insect Vision-based Single-electron Circuit Performing Motion Detection ED2008-70 SDM2008-89 Andrew Kilinga KikomboTetsuya AsaiYoshihito AmemiyaHokkaido univ.
7月11日(金) 午前  セッション 6: Power and High-Frequency Devices I
09:00 - 10:40
(1) 09:00-09:25 [招待講演]SiC Power Transistor and Its Application for DC/DC Converter ED2008-71 SDM2008-90 Makoto KitabatakeMatsushita Electric Industrial
(2) 09:25-09:50 [招待講演]Recent Advances on GaN Vertical Power Device ED2008-72 SDM2008-91 Tetsu KachiToyota Central R&D Labs., Inc.
(3) 09:50-10:15 [招待講演]Millimeter-wave MMIC Technologies for F-band Application ED2008-77 SDM2008-96 Toshihiko KosugiAkihiko HirataKoichi MurataNaoya KukutsuYuichi KadoTakatomo EnokiNTT
(4) 10:15-10:40 [招待講演]Emission of Terahertz Radiation from InGaP/InGaAs/GaAs Grating-Bicoupled Plasmon-Resonant Nano-Transistors ED2008-78 SDM2008-97 Taiichi OtsujiTohoku Univ.
  10:40-10:50 休憩 ( 10分 )
7月11日(金) 午前  セッション 7A: Power and High-Frequency Devices II
10:50 - 12:35
(1) 10:50-11:05 High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation ED2008-73 SDM2008-92 Daisuke ShibataHisayoshi MatsuoMatsushita Electric Industrial)・Shuichi NagaiMing LiPanasonic Boston Lab)・Naohiro TsurumiHidetoshi IshidaManabu YanagiharaYasuhiro UemotoTetsuzo UedaTsuyoshi TanakaDaisuke UedaMatsushita Electric Industrial
(2) 11:05-11:20 Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET ED2008-74 SDM2008-93 Chien-Nan LiaoNational Central Univ.)・Jhih-Chao HuangFeng-Tso ChienFeng Chia Univ.)・Chii-Wen ChenMinghsin Univ. of Sci. and Tech.)・Yao-Tsung TsaiNational Central Univ.
(3) 11:20-11:35 The Analysis of the Floating Field Limiting Ring and Field Plate ED2008-75 SDM2008-94 Chien-Nan LiaoNational Central Univ.)・Jhih-Chao HuangFeng-Tso ChienChing-Hwa ChengFeng Chia Univ.)・Yao-Tsung TsaiNational Central Univ.
(4) 11:35-11:50 A Latchup-Free Power-Rail ESD Clamp Circuit with Stacked-Bipolar Devices in a High-Voltage Technology ED2008-76 SDM2008-95 Jae-Young ParkJong-Kyu SongChang-Soo JangJoon-Tae JangSan-Hong KimSung-Ki KimTaek-Soo KimDongbu HiTek
(5) 11:50-12:05 Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter ED2008-79 SDM2008-98 HyunChul KangTakuya NishimuraTaiichi OtsujiTohoku Univ.)・Naoya WatanabeTanemasa AsanoKyushu Univ.
(6) 12:05-12:20 Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter ED2008-80 SDM2008-99 Takuya NishimuraNobuhiro MagomeHyunChul KangTaiichi OtsujiTohoku Univ.
(7) 12:20-12:35 Performance Prediction of Deep Sub-nH Inductors for Millimeter-Wave Applications ED2008-81 SDM2008-100 Sooyeon KimYongho OhJae-Sung RiehKorea Univ.
  12:35-13:35 昼食 ( 60分 )
7月11日(金) 午後  セッション 7B: Si Devices III
10:50 - 12:35
(1) 10:50-11:05 Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML type D-Flip Flop ED2008-82 SDM2008-101 Tetsuo EndohMasashi KamiyanagiTohoku Univ.
(2) 11:05-11:20 Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations ED2008-83 SDM2008-102 Masashi KamiyanagiYuto NorifusaTetsuo EndohTohoku Univ.
(3) 11:20-11:35 Implementation of Channel Thermal Noise Model in CMOS RFIC Design ED2008-84 SDM2008-103 Jongwook JeonIckhyun SongHyungcheol ShinSeoul National Univ.
(4) 11:35-11:50 CMOS Digitally Controlled Programmable Gain Amplifier (PGA) with DC Offset Cancellation ED2008-85 SDM2008-104 Kyunghoon KimJinwook BurnSogang Univ.
(5) 11:50-12:05 Chip Design of a Successive Approximation A/D Converter for Structure Monitoring System ED2008-87 SDM2008-106 Jae-Woon KimJinwook BurmSogang Univ.
(6) 12:05-12:20 Chip Design of Structure Monitoring Sensor Driving IC for Telemetrics Application ED2008-88 SDM2008-107 Jun-Gyu LeeBae-Ki JungJinwook BurmSogang Univ.
(7) 12:20-12:35 The Data Analysis Technique of the Atomic Force Microscopy for the Atomically Flat Silicon Surface ED2008-89 SDM2008-108 Masahiro KondaAkinobu TeramotoTomoyuki SuwaRihito KurodaTadahiro OhmiTohoku Univ.
  12:35-13:35 昼食 ( 60分 )
7月11日(金) 午後  セッション 8A: Si Devices IV
13:35 - 15:05
(1) 13:35-13:50 Electrical Properties of Highly Crystallized Ge:H Thin Films Grown from VHF Inductively-Coupled Plasma of H2-diluted GeH4 ED2008-90 SDM2008-109 Hirotaka KakuKatsunori MakiharaMitsuhisa IkedaSeiichiro HigashiSeiichi MiyazakiHiroshima Univ.
(2) 13:50-14:05 Study on Gate Around Transistor (GAT) Layout for Radiation Hardness ED2008-91 SDM2008-110 Min-su LeeYoung-Soo LeeChul-Bum KimYoung-Ho KimKAIST)・Byoung-Gon YuHee Chul LeeETRI
(3) 14:05-14:20 Low Power Pixel-Level ADC for a Micro-Bolometer ED2008-92 SDM2008-111 Dong-Heon HaChi Ho HwangKAIST)・Woo Seok YangETRI)・Yong Soo LeeHee Chul LeeKAIST
(4) 14:20-14:35 A 425 MHz Narrow Channel Spacing Frequency Synthesizer ED2008-93 SDM2008-112 Younwoong ChungJunan LeeJinwook BurmSogang Univ
(5) 14:35-14:50 A Novel 800mV Reference Current Source Circuit for Low-Power Low-Voltge Mixed-Mode Systems ED2008-94 SDM2008-113 Oh Jun KwonKae DalKwackHanyang Univ.
(6) 14:50-15:05 A Novel 900mV Single-Stage Class-AB Amplifier for a Σ-Δ Modulator with the Switched-OPamp Technique ED2008-95 SDM2008-114 Oh Jun KwonKae Dal KwackHanyang Univ.
7月11日(金) 午後  セッション 9A: High-Frequency, Photonic and Sensing Devices
15:05 - 16:05
(1) 15:05-15:20 24 GHz Low Noise Amplifier Design in 65 nm CMOS Technology with Inter-Stage Matching Optimization ED2008-96 SDM2008-115 Ickhyun SongHakchul JungHee-Sauk JhonMinsuk KooHyungcheol ShinSeoul National Univ.
(2) 15:20-15:35 Reduced Branch-Line Coupler Using Eight Two-Step Stubs for W-Band Application of MMIC ED2008-97 SDM2008-116 Tae-Jong BaekSang-Jin LeeMin HanJin-Koo RheeDongguk Univ.
(3) 15:35-15:50 Design Consideration of High Power LED Arrays for Backlight Unit Applications ED2008-101 SDM2008-120 Bong-Ryeol ParkHo-Young ChaHongik Univ.
(4) 15:50-16:05 Electrochemical Formation and Functionalization of InP Porous Nanostructures and Their Application to Chemical Sensors ED2008-102 SDM2008-121 Akinori MizohataNaoki YoshizawaTaketomo SatoTamotsu HashizumeHokkaido Univ.
7月11日(金) 午後  セッション 8B: Compound Semiconductor Device Process Technology
13:35 - 15:50
(1) 13:35-13:50 W-band Single Balanced Mixer using High Performance Dot Schottky Diode ED2008-98 SDM2008-117 Sang-Jin LeeJung-Hun OhTae-Jong BaekMun-Kyo LeeDong-Sic KoDu-Hyun KoHyun-Chang ParkJin-Koo RheeDongguk Univ.
(2) 13:50-14:05 SiC MESFET Power Amplifier for 3.6 GHz-3.8 GHz WiMAX Application ED2008-99 SDM2008-118 Jae-Kwon KimKyunghwan KimJinwook BurnSogang Univ.
(3) 14:05-14:20 Heat Dissipation and the Nature of Negative-Differential-Resistance for GaAs Gunn Diodes ED2008-100 SDM2008-119 M. R. KimS. D. LeeJ. S. LeeN. S. KwakS. D. KimJ. K. RheeDongguk Univ.)・W. J. KimADD
(4) 14:20-14:35 AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire ED2008-103 SDM2008-122 Tomohiro MurataMasayuki KurodaMatsushita Electric Industrial)・Shuichi NagaiPanasonic Boston Lab.)・Masaaki NishijimaHidetoshi IshidaManabu YanagiharaTetsuzo UedaHiroyuki SakaiTsuyoshi TanakaMatsushita Electric Industrial)・Ming LiPanasonic Boston Lab.
(5) 14:35-14:50 Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures ED2008-104 SDM2008-123 Hironari ChikaokaYouichi TakakuwaKenji ShiojimaMasaaki KuzuharaUniv. of Fukui
(6) 14:50-15:05 AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD ED2008-105 SDM2008-124 Hideyuki OkitaShinichi HoshiToshiharu MaruiMasanori ItohFumihiko TodaYoshiaki MorinoIsao TamaiYoshiaki SanoShohei SekiOKI Electric Industry
(7) 15:05-15:20 Characterization of GaN Surfaces After High-Temperature Annealing and Carbon Diffusion ED2008-106 SDM2008-125 Takeshi KimuraTamotsu HashizumeHokkaido Univ.
(8) 15:20-15:35 Characterization of Ni/i-AlGaN/GaN Schottky Samples Fabricated after H3PO4-Etching ED2008-107 SDM2008-126 Takayuki SawadaYuta KaizukaKensuke TakahashiKazuaki ImaiHokkaido Inst. of Tech.
(9) 15:35-15:50 Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition ED2008-108 SDM2008-127 Masashi KatoHidenori OnoKazuya OgawaMasaya IchimuraNagoya Inst. of Tech.

講演時間
基調講演発表 35 分 + 質疑応答 5 分
招待講演発表 20 分 + 質疑応答 5 分
一般講演発表 10 分 + 質疑応答 5 分

問合先と今後の予定
ED 電子デバイス研究会(ED)   [今後の予定はこちら]
問合先 高谷 信一郎(日立中研)
TEL: 0423-23-1111(内線3048)、FAX: 0423-27-7738
E-: crl
村田 浩一(NTT)
TEL:046-240-2871、FAX:046-270-2872
E-aecl
原 直紀 (富士通研究所)
TEL : 046-250-8242、FAX : 046-250-8168
E- : o
津田 邦男(東芝)
TEL : 044-549-2142、FAX : 044-520-1501
E- : oba 
SDM シリコン材料・デバイス研究会(SDM)   [今後の予定はこちら]
問合先 川中繁 (東芝)
TEL 045-776-5670, FAX 045-776-4104
E- geba 
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問合先  


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