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| Chair |
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Tetsu Kachi (Toyota Central R&D Labs.) |
| Vice Chair |
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Naoki Hara (Fujitsu Labs.) |
| Secretary |
|
Michihiko Suhara (Tokyo Metropolitan Univ.), Tetsuzo Ueda (Panasonic) |
| Assistant |
|
Seiya Kasai (Hokkaido Univ.), Koji Matsunaga (NEC) |
|
| Conference Date |
Thu, Jul 26, 2012 13:30 - 16:40
Fri, Jul 27, 2012 09:30 - 12:15 |
| Topics |
Semiconductor Process and Devices (surface, interface, reliability), others |
| Conference Place |
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Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Thu, Jul 26 PM
13:30 - 16:40 |
| (1) |
13:30-13:55 |
Effects of annealing on DC performance of AlGaN/GaN MIS HEMTs  ED2012-41 |
Maiko Hatano, Yuya Taniguchi, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. Fukui) |
| (2) |
13:55-14:20 |
Measurement of Channel Electron Mobility in AlGaN/GaN MISHFET ED2012-42 |
Kentaro Tamai, Jin-Ping Ao (Tokushima Univ.), Daigo Kikuta (Toyota Central R&D Labs., Inc.), Masahiro Sugimoto (Toyota Motor Corporation), Yasuo Ohno (Tokushima Univ.) |
| (3) |
14:20-14:45 |
Temperature dependence of frequency dispersion in $C$-$V$ characteristics of AlN/AlGaN/GaN MIS-HFET ED2012-43 |
Hong-An Shih, Masahiro Kudo, Toshi-kazu Suzuki (JAIST) |
| |
14:45-15:00 |
Break ( 15 min. ) |
| (4) |
15:00-15:25 |
Interface characterization of AlInN/GaN heterostructures ED2012-44 |
Tamotsu Hashizume, Yujin Hori, Masamichi Akazawa (Hokkaido Univ.) |
| (5) |
15:25-15:50 |
Effect of ICP Etching on p-type GaN Schottky Contacts ED2012-45 |
Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Kazuki Nomoto (Univ. of Notre Dame), Kenji Shiojima (Univ. of Fukui) |
| (6) |
15:50-16:15 |
Electrical Characteristics of Surface Stoichiometry Controlled p-GaN Schottky Contacts ED2012-46 |
Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Takashi Kajiwara, Satoru Tanaka (Kyushu Univ.), Kenji Shiojima (Univ. of Fukui) |
| (7) |
16:15-16:40 |
Investigation of impact ionization in AlGaN/GaN HEMTs using full-band Monte Carlo model ED2012-47 |
Kazuki Kodama, Hirokuni Tokuda, Masaaki Kuzuhara (Fukui Univ.) |
Fri, Jul 27 AM
09:30 - 12:15 |
| (8) |
09:30-09:55 |
Delay Time Analysis of Strained InSb HEMTs Using Quantum-Corrected Monte Carlo Method ED2012-48 |
Yutaro Nagai, Jun Sato, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Sci.), Akira Endoh, Issei Watanabe (NICT) |
| (9) |
09:55-10:20 |
Modeling of nonlinear quantum transport for tunnel diodes and theoretical analysis of its cut-off frequency ED2012-49 |
Shin Yamashita, Yuji Kurakami, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) |
| (10) |
10:20-10:45 |
Large-signal analysis of injection locking and frequency comb properties in array oscillators consisting of resonant tunneling diodes integrated with wideband antennas ED2012-50 |
Kiyoto Asakawa, Atsushi Tashiro, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) |
| |
10:45-11:00 |
Break ( 15 min. ) |
| (11) |
11:00-11:25 |
Study on Synchronized Charge Transfer and Efficiency in GaAs-based Etched Nanowire CCD ED2012-51 |
Yuki Nakano, Takayuki Tanaka, Seiya Kasai (Hokkaido Univ.) |
| (12) |
11:25-11:50 |
Spin injection experiment into high In-content InGaAs/InAlAs two-dimensional electron gas carried out in a non-local configuration ED2012-52 |
Shiro Hidaka, Taro Kondo, Masashi Akabori, Syoji Yamada (JAIST) |
| (13) |
11:50-12:15 |
Graphene FET with Diamondlike Carbon Dielectrics ED2012-53 |
Susumu Takabayashi, Meng Yang, Shuichi Ogawa, Hiroyuki Hayashi, Yuki Kurita, Yuji Takakuwa, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E- :          t 
Tetsuzo Ueda（Panasonic)
TEL：+81-75-956-8273、FAX：+81-75-956-9110
E-：     zo pa   c |
Last modified: 2012-05-23 18:33:32
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