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Technical Committee on Electron Devices (ED) [schedule] [select]
Chair Michihiko Suhara (TMU)
Vice Chair Hiroki Fujishiro (Tokyo Univ. of Science)
Secretary Toshiyuki Oishi (Saga Univ.), Tatsuya Iwata (Toyama Pref. Univ.)
Assistant Junji Kotani (Fjitsu Lab.), Takuya Tsutsumi (NTT)

Technical Committee on Microwaves (MW) [schedule] [select]
Chair Yoshinori Kogami (Utsunomiya Univ.)
Vice Chair Tadashi Kawai (Univ. of Hyogo), Kensuke Okubo (Okayama Prefectural Univ.), Shintaro Shinjo (Mitsubishi Electric)
Secretary Takashi Shimizu (Utsunomiya Univ.), Masaru Sato (Fujitsu Labs.)
Assistant Satoshi Yoshida (Kagoshima Univ.), Kyoya Takano (Tokyo Univ. of Science)

Conference Date Fri, Jan 31, 2020 09:00 - 17:30
Topics Compound semiconductor, High speed and High frequency devices/Microwave technologies 
Conference Place Room B3-6, The Kikai Shinko Kaikan building 
Address 3-5-8, Shibakoen, Minato-ku, Tokyo 105-0011
Sponsors This conference is technical co-sponsored by IEEE MTT-S Japan Chapter, IEEE MTT-S Kansai Chapter and IEEE MTT-S Nagoya Chapter.
Participation Fee This workshop will be held as the IEICE workshop in fully electronic publishing. Participant fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the participant fee page. We request the participant fee to participants who will attend the workshop(s) on ED, MW.

Fri, Jan 31 AM 
09:00 - 10:30
  09:00-09:05 ( 5 min. )
(1) 09:05-09:30 Phase Synchronization Technique Between Fractional-N PLLs by Correcting Phase Error due to Cycle Slip using Reference Delta-Sigma Modulator Sho Ikeda, Akihito Hirai, Koji Tsutsumi, Masaomi Tsuru (MELCO)
(2) 09:30-09:55 Basic study on triplexer using matching circuit consisted of lumped elements Genki Oishi, Shinpei Oshima (NIT,Oyama College)
(3) 09:55-10:20 Novel Sample Holder Structure for S11 Calibration via SOM and Related Application to Dielectric Measurement in Liquids via the Cut-off Waveguide Reflection Method Kouji Shibata (Hachinohe Inst. of Tech.)
  10:20-10:30 Break ( 10 min. )
Fri, Jan 31 AM 
10:30 - 13:10
(4) 10:30-11:20 [Invited Talk]
Current Status and Perspectives of GaN HEMT Power Amplifiers for 5G Base Stations
Kazutaka Inoue (SEI)
(5) 11:20-11:45 GaN-on-Diamond HEMTs fabricated by Surface-Activated Room-Temperature Bonding Shuichi Hiza (Mitsubishi Electric), Masahiro Fujikawa (Mitsubishi Elctric), Yuki Takiguchi, Kunihiko Nishimura, Eiji Yagyu (Mitsubishi Electric), Takashi Matsumae, Yuichi Kurashima, Hideki Takagi (AIST), Mikio Yamamuka (Mitsubishi Electric)
(6) 11:45-12:10 Simple Photoelectrochemical Etching for Recess Gate GaN HEMT Fumimasa Horikiri, Noboru Fukuhara (SCIOCS), Masachika Toguchi, Kazuki Miwa (Hokaido Univ.), Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokaido Univ.)
  12:10-13:10 Break ( 60 min. )
Fri, Jan 31 PM 
13:10 - 14:10
(7) 13:10-14:00 [Special Talk]
Briefing Report on European Microwave Week 2019
Masatake Hangai (Mitsubishi Electric Co.), Kenjiro Nishikawa (Kagoshima Univ.), Kenji Mukai (Murata Manufacturing Co.), Motomi Abe, Yusuke Kitsukawa, Ryota Komaru, Shuichi Sakata, Jun Kamioka, Shinya Yokomizo (Mitsubishi Electric Co.)
  14:00-14:10 Break ( 10 min. )
Fri, Jan 31 PM 
14:10 - 15:35
(8) 14:10-14:35 [Special Talk]
An Accurate and Fast Permittivity Measurement System for Terahertz imaging
Teruo Jyo, Hiroshi Hamada, Hideyuki Nosaka (NTT)
(9) 14:35-15:00 [Special Talk]
Scattering Suppression by a Near-Zero-Index Metamaterial of Periodic Dielectric Spheres
Yuma Takano, Atsushi Sanada (Osaka Univ.)
(10) 15:00-15:25 [Special Talk]
Maximum Achievable Efficiency of Multiple-Input Multiple-Output Inductive Power Transfer Systems
Quang-Thang Duong, Minoru Okada (NAIST)
  15:25-15:35 Break ( 10 min. )
Fri, Jan 31 PM 
15:35 - 16:35
(11) 15:35-16:00 Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.)
(12) 16:00-16:25 Operation Principal and Structure of normally-off Floating Gate GaN HEMT with Injection Gate Nagumo Kenshi, Kimoto Daiki, Suwa Tomoyuki (Tohoku Univ.), Teramoto Akinobu (Hiroshima Univ.), Shirota Riichiro, Tskatani Shinichiro (NCTU), Kuroda Rihito, Sugawa Shigetoshi (Tohoku Univ.)
  16:25-16:35 Break ( 10 min. )
Fri, Jan 31 PM 
16:35 - 17:30
(13) 16:35-17:25 [Invited Talk]
Research and development of compound semiconductor electron devices and high-frequency measurement technologies for millimeter- and submillimeter-wave wireless communications
Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT)
  17:25-17:30 ( 5 min. )

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.
Special Talk (Award特別講演)Each speech will have 20 minutes for presentation and 5 minutes for discussion.
Special Talk (IEEE MTT-S JC)Each speech will have 45 minutes for presentation and 5 minutes for discussion.
Invited TalkEach speech will have 45 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Devices (ED)   [Latest Schedule]
Contact Address  
MW Technical Committee on Microwaves (MW)   [Latest Schedule]
Contact Address Satoshi Yoshida (Kagoshima Univ.)
E-: eee-u
or Takashi Shimizu (Utsunomiya Univ.)
E-: tccu-u 


Last modified: 2019-11-19 10:06:29


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