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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Shigeyoshi Watanabe (Shonan Inst. of Tech.)
Vice Chair Toshihiro Sugii (Fujitsu Microelectronics)
Secretary Hisahiro Anzai (Sony), Tetsuro Endo (Tohoku Univ.)
Assistant Katsunori Onishi (Kyushu Inst. of Tech.)

Conference Date Fri, Jun 19, 2009 09:30 - 18:05
Topics Science and Technology for Dielectric Thin Films for MIS Devices 
Conference Place Komaba Research Campus, The Univ. of Tokyo 
Address 4-6-1 KOMABA MEGURO-KU, TOKYO 153-8505, JAPAN
Transportation Guide http://www.iis.u-tokyo.ac.jp/index_e.html
Contact
Person
Prof. Hiroshi Fujioka
+81-3-5452-6342
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Fri, Jun 19 AM 
09:30 - 11:50
  09:25-09:30 Opening Address ( 5 min. )
(1) 09:30-10:00 Material properties of Ge - Comparison with Silicon SDM2009-26 Kohei M. Itoh (Keio Univ.)
(2) 10:00-10:20 Atomistic Modeling of GeO2/Ge Interface Structure by Molecular Dynamics
-- Comparison with SiO2/Si Interface --
SDM2009-27
Takanobu Watanabe, Tomoya Onda, Ryo Tosaka, Hideaki Yamamoto (Waseda Univ.)
(3) 10:20-10:40 First-Principles Calculations for Interfacial Reaction during Si Oxidation SDM2009-28 Toru Akiyama (Mie Univ.), Hiroyuki Kageshima (NTT Corp.), Masashi Uematsu (Keio Univ.), Tomonori Ito (Mie Univ.)
  10:40-10:50 Break ( 10 min. )
(4) 10:50-11:20 Fundamental Study on GeO2/Ge Interface and its Electrical Properties SDM2009-29 Heiji Watanabe, Marina Saito, Shoichiro Saito, Gaku Okamoto, Katsuhiro Kutsuki, Takuji Hosoi, Tomoya Ono, Takayoshi Shimura (Osaka Univ.)
(5) 11:20-11:50 Electrical Properties of Ge MIS Interface Defects SDM2009-30 Noriyuki Taoka, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota (MIRAI-NIRC), Shinichi Takagi (MIRAI-NIRC/Univ. of Tokyo)
  11:50-12:40 Lunch Break ( 50 min. )
Fri, Jun 19 PM 
12:40 - 16:40
(6) 12:40-13:00 Thermal Stability of Ge MOS Devices
-- Influence of Ge monoxide [GeO(II)] on Ge oxygen [GeO(g)] desorption --
SDM2009-31
Yoshiki Kamata (MIRAI-TOSHIBA), Akira Takashima (TOSHIBA Corp), Tsutomu Tezuka (MIRAI-TOSHIBA)
(7) 13:00-13:20 Fermi Level Pinning at Metal/Germanium Interface and its Controllability SDM2009-32 Tomonori Nishimura, Kosuke Nagashio, Koji Kita, Akira Toriumi (The Univ. of Tokyo//JST-CREST)
(8) 13:20-13:40 Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation SDM2009-33 Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.)
(9) 13:40-14:00 Improvement of electrical characteristics of HfO2/Ge MIS structure treated by fluorine gas and nitrogen radical SDM2009-34 Hideto Imajo, Hyun Lee, Dong-Hun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.)
  14:00-14:10 Break ( 10 min. )
(10) 14:10-14:30 Electrical Characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO2 Interlayers
-- Formation of Insulator on Ge Substrate --
SDM2009-35
Hiroshi Nakashima, Kana Hirayama, Haigui Yang, Dong Wang (Kyushu Univ.)
(11) 14:30-14:50 Photoemission Study of Suboxides on GeO2/Ge Structure Formed by Thermal and Low Temperature Processes SDM2009-36 Hideki Murakami, Yoshikazu Ono, Akio Ohta, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.)
(12) 14:50-15:10 Effect of ALD-Al2O3 Layer on Interfacial Reaction between LaAlO and Ge SDM2009-37 Mitsuo Sakashita, Ryosuke Kato, Shinya Kyogoku, Hiroki Kondo, Shigeaki Zaima (Nagoya Univ.)
(13) 15:10-15:30 Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics SDM2009-38 Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete)
  15:30-15:40 Break ( 10 min. )
(14) 15:40-16:00 Intrinsic Correlation between Mobility Reduction and Vt shift due to Interface Dipole Modulation in HfSiON/SiO2 stack by La or Al addition SDM2009-39 Kosuke Tatsumura, Takamitsu Ishihara, Seiji Inumiya, Kazuaki Nakajima, Akio Kaneko, Masakazu Goto, Shigeru Kawanaka, Atsuhiro Kinoshita (Toshiba Corp.)
(15) 16:00-16:20 Floating Gate Memory with Biomineralized Nanodots Embedded in High-k Gate Dielectric SDM2009-40 Kosuke Ohara, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC), Yukiharu Uraoka (NAIST/CREST)
(16) 16:20-16:40 Formation of Pr Oxide by Atomic Layer Deposition Using Pr(EtCp)3. SDM2009-41 Hiroki Kondo, Kazuya Furuta, Hirotaka Matsui, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.)
  16:40-16:50 Break ( 10 min. )
Fri, Jun 19 PM 
16:50 - 17:05
(17) 16:50-16:55 Characterization of La Diffusion into HfO2/SiO2 Stacked Layers from Ultrathin LaOx SDM2009-42 Akio Ohta, Daisuke Kanme, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.)
(18) 16:55-17:00 Theoretical investigation about electronic structure of doping metal silicide SDM2009-43 Shinichi Sotome, Takashi Nakayama (Chiba Univ)
(19) 17:00-17:05 Characterization of Chemical Bonding Features and Electronic States at TiO2/Pt Interface SDM2009-44 Yuta Goto, Daisuke Kanme, Akio Ohta, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima University)
Fri, Jun 19 PM 
17:05 - 18:05
  -  
  18:05-19:35 Banquet ( 90 min. )

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Shigeru KAWANAKA (Toshiba)
TEL 045-776-5670, FAX 045-776-4104
E- geba 


Last modified: 2009-04-27 21:16:32


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