| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2018)
Search Results: Keywords 'from:2018-10-17 to:2018-10-17'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2018-10-17 14:00 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Fin-FET MONOS for Next Generation Automotive-MCU Shibun Tsuda, Tomoya Saito, Hirokazu Nagase, Yoshiyuki Kawashima, Atsushi Yoshitomi, Shinobu Okanishi, Tomohiro Hayashi, Takuya Maruyama, Masao Inoue, Seiji Muranaka, Shigeki Kato, Takuya Hagiwara, Hirokazu Saito, Tadashi Yamaguchi, Masaru Kadoshima, Takahiro Maruyama, Tatsuyoshi Mihara, Hiroshi Yanagita, Kenichiro Sonoda, Yasuo Yamaguchi, Tomohiro Yamashita (Renesas)  SDM2018-52 |
[more] | SDM2018-52 pp.1-5 |
| SDM | 2018-10-17 14:50 |
Miyagi | Niche, Tohoku Univ. | New piezoelectric materials by RF sputtering process and applications to sensor Fuminobu Imaizumi (NIT, Oyama College), kousuke Yanagida SDM2018-53 |
[more] | SDM2018-53 pp.7-10 |
| SDM | 2018-10-17 15:20 |
Miyagi | Niche, Tohoku Univ. | Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating Kaname Imokawa (Kyushu Univ), Nozomu Tanaka (Kyushu Univ.), Akira Suwa (Kyushu Univ), Daisuke Nakamura, Taizoh Sadoh (Kyushu Univ.), Tetsuya Goto (New Industry Creation Hatchery Center, Tohoku Univ.), Hiroshi Ikenoue (Kyushu Univ) SDM2018-54 |
There are some issues in printable Si TFT processes. In particlular, formation of ormic contact of silicon TFT requiers ... [more] | SDM2018-54 pp.11-14 |
| SDM | 2018-10-17 16:05 |
Miyagi | Niche, Tohoku Univ. | Fabrication process of Hf-based MONOS nonvolatile memory with Si(100) surface flattening process Sohya Kudoh, Yusuke Horiuchi, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-55 |
We have reported nonvolatile memory characteristics of Hf-based MONOS diodes were improved by using atomically flat Si(1... [more] | SDM2018-55 pp.15-19 |
| SDM | 2018-10-17 16:35 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Cr2Ge2Te6-Based PCRAM Showing Low Resistance Amorphous and High Resistance Crystalline States Shogo Hatayama, Yuji Sutou, Daisuke Ando, Junichi Koike (Tohoku Univ.) SDM2018-56 |
Phase change random access memory (PCRAM) has attracted much attention as one of next generation non-volatile memory. Ge... [more] | SDM2018-56 pp.21-26 |
| SDM | 2018-10-18 09:30 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
A lesson from Kumamoto earthquake disaster at Sony Semiconductor Manufacturing Kumamoto Technology Center Hiromi Suzuki (Kumamoto Univ.), Yasuhiro Ueda (Sony Corp.) SDM2018-57 |
(To be available after the conference date) [more] | SDM2018-57 pp.27-30 |
| SDM | 2018-10-18 10:20 |
Miyagi | Niche, Tohoku Univ. | Thin film formation of ferroelectric undoped HfO2 on Si(100) by RF magnetron sputtering Min Gee Kim, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-58 |
In this study, we investigated thin film formation of ferroelectric undoped HfO2 directly deposited on p-Si(100). By po... [more] | SDM2018-58 pp.31-34 |
| SDM | 2018-10-18 10:50 |
Miyagi | Niche, Tohoku Univ. | Schottky barrier height reduction of Pd2Si/Si(100) diodes by dopant segregation process Rengie Mark D. Mailig, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-59 |
In this paper, the reduction of the Schottky barrier height (SBH) of Pd2Si/Si(100) diodes by the dopant segregation (DS)... [more] | SDM2018-59 pp.35-40 |
| SDM | 2018-10-18 13:00 |
Miyagi | Niche, Tohoku Univ. | Improvement of Pentacene/SiO2 Interface Properties by the N-doped LaB6 Interfacial Layer Yasutaka Maeda, Kyung Eun Park, Yuki Komatsu, Shun-ichiro Ohmi (Tokyo Tech) SDM2018-60 |
We have reported that the effect of nitrogen-doped LaB6 interfacial layer on the improvement of pentacene-based device c... [more] | SDM2018-60 pp.41-45 |
| SDM | 2018-10-18 13:30 |
Miyagi | Niche, Tohoku Univ. | Process Evaluation of Si Nanowire for Thermoelectric Device by Raman Spectroscopy Ryo Yokogawa (Meiji Univ.), Motohiro Tomita, Takanobu Watanabe (Waseda Univ.), Atsushi Ogura (Meiji Univ.) SDM2018-61 |
Silicon nanowire (SiNW) is expected to be a new attractive thermoelectric material with excellent performance with low t... [more] | SDM2018-61 pp.47-50 |
| SDM | 2018-10-18 14:00 |
Miyagi | Niche, Tohoku Univ. | Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain Shinya Ichino, Akinobu Teramoto, Rihito Kuroda, Takezo Mawaki, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2018-62 |
In this paper, a statistical analysis of electric characteristics variabilities such as threshold voltage variability an... [more] | SDM2018-62 pp.51-56 |
| SDM | 2018-10-18 14:30 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Promotion of Silicon Island in Kumamoto area and reconstruction from the earthquake disaster
-- How to develop Japanese semiconductor industry with academia collaboration -- Hiroshi Kubota (Kumamoto Univ.) SDM2018-63 |
After the reconstruction from the Kumamoto earthquake disaster, I will return to the origin of industry-university colla... [more] | SDM2018-63 pp.57-61 |
[Return to Top Page]