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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2013)
Search Results: Keywords 'from:2013-10-17 to:2013-10-17'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2013-10-17 14:00 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Technological Trend of SiC Power Devices Takashi Shinohe (TOSHIBA)  SDM2013-88 |
(To be available after the conference date) [more] | SDM2013-88 pp.1-4 |
| SDM | 2013-10-17 14:50 |
Miyagi | Niche, Tohoku Univ. | Electrical Properties and Reliability of Ultrathin HfN Gate Insulator Formed on Si(100) and Si(110) Nithi Atthi, Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2013-89 |
[more] | SDM2013-89 pp.5-9 |
| SDM | 2013-10-17 15:40 |
Miyagi | Niche, Tohoku Univ. | Effect of silicon surface roughness on 3-D MOS capacitor with ultrathin HfON gate insulator formed by ECR plasma sputtering Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2013-90 |
[more] | SDM2013-90 pp.11-14 |
| SDM | 2013-10-17 16:10 |
Miyagi | Niche, Tohoku Univ. | A device structure design of multi-gate MOSFETs based on carrier mobility characteristics of atomically flattened Si surface Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2013-91 |
[more] | SDM2013-91 pp.15-20 |
| SDM | 2013-10-18 09:30 |
Miyagi | Niche, Tohoku Univ. | Si photodiode wiht high sensitivity and high stability to UV-light with 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack Yasumasa Koda, Rihito Kuroda, Yukihisa Nakao, Shigetoshi Sugawa (Tohoku Univ.) SDM2013-92 |
[more] | SDM2013-92 pp.21-25 |
| SDM | 2013-10-18 10:00 |
Miyagi | Niche, Tohoku Univ. | A Study on Nitrogen-Doped LaB6 Thin Film Formation and Its Device Applications Yasutaka Maeda, Shun-ichiro Ohmi (Tokyo Inst. of Tech.), Tetsuya Goto, Tadahiro Ohmi (Tohoku Univ.) SDM2013-93 |
It was reported that oxidation immunity of LaB6 was improved by nitrogen incorporation. Basic characteristics of nitrog... [more] | SDM2013-93 pp.27-31 |
| SDM | 2013-10-18 10:30 |
Miyagi | Niche, Tohoku Univ. | Introduction of the Bias Operation Hard X-ray Photoelectron Spectroscopy: Evaluation for Insulator/Si interface Norihiro Ikeno, Kohki Nagata (Meiji Univ.), Hiroshi Oji, Ichiro Hirosawa (JASRI), Atsushi Ogura (Meiji Univ.) SDM2013-94 |
(To be available after the conference date) [more] | SDM2013-94 pp.33-36 |
| SDM | 2013-10-18 11:00 |
Miyagi | Niche, Tohoku Univ. | Classical molecular dynamics simulations of plasma-induced physical damage
-- defect generation mechanisms in fin-type MOSFET -- Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) SDM2013-95 |
[more] | SDM2013-95 pp.37-40 |
| SDM | 2013-10-18 13:00 |
Miyagi | Niche, Tohoku Univ. | Design method of stacked type non-volatile memory Shigeyoshi Watanabe (Shonan Inst. of Tech.) SDM2013-96 |
[more] | SDM2013-96 pp.41-46 |
| SDM | 2013-10-18 13:30 |
Miyagi | Niche, Tohoku Univ. | Effects of plasma-induced charging damage on random telegraph noise (RTN) behaviors in advanced MOSFETs Masayuki Kamei, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono (Kyoto Univ.) SDM2013-97 |
[more] | SDM2013-97 pp.47-50 |
| SDM | 2013-10-18 14:00 |
Miyagi | Niche, Tohoku Univ. | Study of Time Constant Analysis in Random Telegraph Noise at the Subthreshold Voltage Region Akihiro Yonezawa, Akinobu Teramoto, Toshiki Obara, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2013-98 |
We extracted time constants of capture and emission of Random Telegraph Noise (RTN), and their dependencies of the gate-... [more] | SDM2013-98 pp.51-56 |
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