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Technical Committee on Electron Device (ED)
Chair: Koichi Maezawa (Univ. of Toyama) Vice Chair: Kunio Tsuda (Toshiba)
Secretary: Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST)
Assistant: Manabu Arai (New JRC), Masataka Higashiwaki (NICT)

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Technical Committee on Component Parts and Materials (CPM)
Chair: Satoru Noge (Numazu National College of Tech.) Vice Chair: Fumihiko Hirose (Yamagata Univ.)
Secretary: Junichi Kodate (NTT), Nobuyuki Iwata (Nihon Univ.)
Assistant: Takashi Sakamoto (NTT), Yuichi Nakamura (Toyohashi Univ. of Tech.)

===============================================
Technical Committee on Silicon Device and Materials (SDM)
Chair: Yuzou Oono (Univ. of Tsukuba) Vice Chair: Tatsuya Kunikiyo (Renesas)
Secretary: Rihito Kuroda (Tohoku Univ.)
Assistant: Tadashi Yamaguchi (Renesas)

DATE:
Thu, May 19, 2016 13:00 - 16:40
Fri, May 20, 2016 09:30 - 12:20

PLACE:
10F Research Project Building, Hamamatsu Campus, Shizuoka University(3-5-1, Johoku, Naka-ku, Hamamatsu-shi, Shizuoka, Japan. Board any bus from Bus Stop No. 15 or 16, North Exit Bus Terminal, JR Hamamatsu Station. Get off at Shizuoka Daigaku Bus Stop. (approx. 20 min., approx. 10 departures/hour). http://www.eng.shizuoka.ac.jp/en_others/location/. Prof. Yasushi Takano)

TOPICS:
crystal growth、devices characterization , etc.

----------------------------------------
Thu, May 19 PM (13:00 - 16:40)
----------------------------------------

(1) 13:00 - 13:25
Fabrication of CVD single-layer graphene diaphragm above a nano cavity by dry transfer technique
Hayato Ishida, Makoto Ishida (Toyohashi Tech.), Kazuaki Sawada, Kazuhiro Takahashi (Toyohashi Tech./EIIRIS)

(2) 13:25 - 13:50
Synthesis of graphenes on metal alloy substrates by thermal chemical vapor deposition
Naoki Kishi, Kazuki Iwama, Takuya Mizutani, Shinya Kato, Tetsuo Soga (NITech)

(3) 13:50 - 14:15
ZnO nanostructures for the fabrication of photoanode towards energy applications
Mani Navaneethan, Jayaram Archana, Santhana Harish, Tadanobu Koyama, Hiroya Ikeda, Yasuhiro Hayakawa (Shizuoka Univ.)

(4) 14:15 - 14:40
Thermoelectric characteristics of flexible material with ZnO nanostructures
Masaya Wanami, Selvaraj Shanthi, Yuhei Suzuki, Veluswamy Pandiyarasan (Shizuoka Univ.), Faiz Salleh (Univ. Malaya), Masaru Shimomura, Kenji Murakami, Hiroya Ikeda (Shizuoka Univ.)

----- Break ( 20 min. ) -----

(5) 15:00 - 15:25
Investigation of interface formation process between insulator and nitride-semiconductor for insulated gate transistors
Yutaka Kondo, Masatoshi Shinohara, Tomoki Hikosaka, Makoto Baba (Toyohashi Univ. Technol.), Hiroshi Okada (EIIRIS, Toyohashi Univ. Technol.), Hiroto Sekiguchi, Keisuke Yamane, Akihiro Wakahara (Toyohashi Univ. Technol.)

(6) 15:25 - 15:50
Rectenna circuits with diamond Schottky barrier diodes
Naoto Kawano, Makoto Kasu, Toshiyuki Oishi (Saga Univ.)

(7) 15:50 - 16:15
Fabrication of a thin plasmonic color sheet embedded with Al subwavelength gratings in parylene
Hayato Kumagai (Toyohashi Univ.), Hiroaki Honma (Toyohashi Univ./JSPS), Makoto Ishida, Kazuaki Sawada (Toyohashi Univ./EIIRIS), Kazuhiro Takahashi (Toyohashi Univ.)

(8) 16:15 - 16:40
Fabrication of magnetophotonic crystal having cerium substituted yttrium iron garnet for using at near-infrared wavelength
Takuya Yoshimoto, Taichi Goto, Hiroyuki Takagi, Yuichi Nakamaura, Hironaga Uchida, Mitsuteru Inoue (TUT)

----------------------------------------
Fri, May 20 AM (09:30 - 12:20)
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(9) 09:30 - 09:55
Chemical solution deposition of SnS thin films using EDTA as complexing agent
Yusaku Kanda, Yasushi Takano, Akihiro Ishida (Shizuoka Univ.)

(10) 09:55 - 10:20
Annealing of p-type wide-gap CuxZnyS thin films deposited by the photochemical deposition method
Bayingaerdi Tong, Masaya Ichimura (NITech)

(11) 10:20 - 10:45
Evaluation of electrical properties of HfS2 thin flakes obtained by mechanical exfoliation
Vikrant Upadhyaya, Toru Kanazawa, Yasuyuki Miyamoto (TokyoTech)

----- Break ( 20 min. ) -----

(12) 11:05 - 11:30
Heteroepitaxial Growth of GaSb Films on Si(111)-√3x√3-Ga Surface Phase
Hiroya Shimoyama, Masayuki Mori, Koichi Maezawa (Univ. of Toyama)

(13) 11:30 - 11:55
Gravity effect on the properties of InxGa1-xSb ternary alloys grown at the International Space Station
Velu NirmalKumar (Shizuoka Univ), Mukannan Arivanandhan (Anna Univ), Govindasamy Rajesh, Tadanobu Koyama, Yoshimi Momose (Shizuoka Univ), Kaoruho Sakata (Univ.Tokyo), Tetsuo Ozawa (Shizuoka Insti.Sci.&Tech.), Yasunori Okano (OsakaUniv.), Yuko Inatomi (JAXA), Yasuhiro Hayakawa (Shizuoka Univ)

(14) 11:55 - 12:20
Interface control for III-V/Si hetero-epitaxy
Keisuke Yamane, Hiroto Sekiguchi (Toyohashi Tech.), Hiroshi Okada (EIIRIS), Akihiro Wakahara (Toyohashi Tech.)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.


=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Sat, Jul 23, 2016 - Sun, Jul 24, 2016: Tokyo Metropolitan Univ. Minami-Osawa Campus, International House [Sat, Jun 4], Topics: Semiconductor Processes and Devices
Tue, Aug 9, 2016 - Wed, Aug 10, 2016: Kikai-Shinko-Kaikan Bldg. [Fri, Jun 24], Topics: Sensor, MEMS, general

# SECRETARY:
Koji Matsunaga(NEC)
TEL:+81-44-435-8348 FAX:+81-44-455-8253
E-mail: k-fpc
Toshikazu Suzuki (JAIST)
TEL : +81-761-51-1441 Fax : +81-761-51-1455
E-mail : sijaist

=== Technical Committee on Component Parts and Materials (CPM) ===
# FUTURE SCHEDULE:

Fri, Jun 17, 2016: Kikai-Shinko-Kaikan Bldg. [Fri, Apr 15], Topics: Marterial・Device Summer Meeting
Fri, Jul 22, 2016 - Sat, Jul 23, 2016: [Mon, May 30]
Thu, Aug 25, 2016 - Fri, Aug 26, 2016 (tentative): [Thu, Jun 16]

# SECRETARY:
Yuichi Nakamura (Toyohashi University of Techonology)
TEL : 0532-44-6734 FAX : 0532-44-6757
e-mail : eetut

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Wed, Jun 29, 2016: Campus Innovation Center Tokyo [Mon, Apr 11], Topics: Material Science and Process Technology for MOS Devices and Memories
Mon, Aug 1, 2016 - Wed, Aug 3, 2016: Central Electric Club [Wed, Jun 15], Topics: Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications

# SECRETARY:
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-mail: e3


Last modified: 2016-03-23 10:38:10


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