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Technical Committee on Electron Device (ED)
Chair: Takao Waho Vice Chair: Masaaki Kuzuhara
Secretary: Tsuyoshi Tanaka, Manabu Arai
Assistant: Shin-ichiro Takatani, Koichi Murata

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Technical Committee on Silicon Device and Materials (SDM)
Chair: Tanemasa Asano Vice Chair: Toshihiro Sugii
Secretary: Morifumi Ohno, Shigeru Kawanaka
Assistant: Yuichi Matsui

DATE:
Thu, Feb 1, 2007 13:30 - 17:00
Fri, Feb 2, 2007 09:30 - 14:00

PLACE:

TOPICS:

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Thu, Feb 1 PM (13:30 - 14:30)
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(1) 13:30 - 13:50
Physics-based SPICE modeling of triple barrier resonant tunneling diodes
Naoya Asaoka, Michihiko Suhara, Tsugunori Okumura (Tokyo Metropolitan Univ.)

(2) 13:50 - 14:10
Analysis on Resonant-Tunneling 4RTD Logic Gate Operation
Hiroki Okuyama, Kentaro Sugawara, Tomohiko Ebata, Takao Waho (Sophia Univ.)

(3) 14:10 - 14:30
A resonant tunneling diode pair oscillator for high power operation
Koichi Maezawa (Univ. of Toyama), Yohei Ookawa, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.)

----- Break ( 15 min. ) -----

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Thu, Feb 1 PM (14:45 - 15:45)
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(4) 14:45 - 15:25
[Invited Talk]
SiGe Quantum Effect Devices
Yoshiyuki Suda, Hirotaka Maekawa, Yoshihiro Sano, Youichi Takahashi, Tadamasa Kobayashi, Hiroaki Hanafusa (TUAT)

(5) 15:25 - 15:45
Theoretical analysis of fluoride-based intersubband transition lasers on Si substrate
Keisuke Jinen, Kaoru Uchida, Shinji Kodaira (Tokyo Inst. Tech.), Masahiro Watanabe, Masahiro Asada (Tokyo Inst. Tech./JST-SORST)

----- Break ( 15 min. ) -----

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Thu, Feb 1 PM (16:00 - 17:00)
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(6) 16:00 - 16:20
Investigation of A Novel Logic Circuit Implementation Scheme Utilizing Topological Correlation between Logic Graph by Decision Diagram and Nanowire Network Structures
Seiya Kasai, Tatsuya Nakamura, Yuta Shiratori (Hokkaido Univ.)

(7) 16:20 - 16:40
Single-electron device using Si nanodot array and multi-input gates
Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Kenji Yamazaki, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.)

(8) 16:40 - 17:00
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Tetsuya Hirose, Tetsuya Asai, Yoshihito Amemiya (Hokkaido Univ.)

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Fri, Feb 2 AM (09:30 - 10:30)
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(9) 09:30 - 09:50
Dependency of spin-orbit interaction in InAs HEMT on electric field perpendicular to the channel
Takashi Matsuda, Kanji Yo (Hokkaido Univ.)

(10) 09:50 - 10:10
Fabrication of epitaxial magnetic tunnel junctions with a Heusler alloy Co2Cr0.6Fe0.4Al thin film and a MgO tunnel barrier and their tunnel magnetoresistance characteristics
Takao Marukame, Takayuki Ishikawa, Kenichi Matsuda, Tetsuya Uemura, Masafumi Yamamoto (Hokkaido Univ.)

(11) 10:10 - 10:30
Non-volatile ternary content addressable memory using CoFe-based magnetic tunnel junction
Tetsuya Uemura, Takao Marukame, Kenichi Matsuda, Masafumi Yamamoto (Hokkaido Univ.)

----- Break ( 15 min. ) -----

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Fri, Feb 2 AM (10:45 - 11:45)
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(12) 10:45 - 11:05
Transport property of nanographite patterned on Silicon dioxide
Keita Konishi, Takashi Matsuda, Youji Kan (Hokkaido Univ.)

(13) 11:05 - 11:25
Ballistic electron transport properties and rectification effects in InAs/AlGaSb mesoscopic structures
Masatoshi Koyama, Hiroshi Takahashi, Tatsuya Inoue, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. Tech.)

(14) 11:25 - 11:45
Fabrication and Characterization of Three-GaAs Nanowire-Junction Devices Controlled by Schottky Wrap Gates
Tatsuya Nakamura, Seiya Kasai, Yuta Shiratori, Tamotsu Hashizume (Hokkaido Univ.)

----- Break ( 75 min. ) -----

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Fri, Feb 2 PM (13:00 - 14:00)
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(15) 13:00 - 13:20
Cotunneling Current in Si Single-electron Transistor Based on Multiple Islands
Kensaku Ohkura, Tetsuya Kitade, Anri Nakajima (Hiroshima Univ.)

(16) 13:20 - 13:40
Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
Daniel Moraru (Shizuoka Univ.), Yukinori Ono (ＮＴＴ), Hiroshi Inokawa, Kiyohito Yokoi, Ratno Nuryadi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.)

(17) 13:40 - 14:00
Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors
-- Sensing the presence of a single-charge in the substrate --
Zainal Burhanudin, Ratno Nuryadi, Michiharu Tabe (Shizuoka Univ.)

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Fri, Apr 20, 2007: [Fri, Feb 23]
Thu, May 24, 2007 - Fri, May 25, 2007: Shizuoka Univ. [Thu, Mar 15]

# SECRETARY:
Tsuyoshi Tanaka（Matsushita）
TEL: 075-956-9083, FAX: 075-956-9110
E-mail:

erl

Manabu Arai（New JRC）
TEL: 049-278-1477、FAX: 049-278-1419
E-mail:

njr

Shinichiro Takatani（Hitachi）
TEL: 049-278-1477、FAX: 049-278-1419
E-mail:

njr

Koichi Murata（NTT)
TEL：046-240-2871、FAX：046-270-2872
E-mail：

aecl

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Thu, Mar 15, 2007: Kikai-Shinko-Kaikan Bldg. [Tue, Jan 30]
Fri, Apr 20, 2007: [Fri, Feb 23]
Thu, May 24, 2007 - Fri, May 25, 2007: Shizuoka Univ. [Thu, Mar 15]

# SECRETARY:
Yasushiro Nishioka (Nihon University, College of Science and Technology)
TEL047-469-6482,FAX047-467-9504
E-mail: