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Technical Committee on Electron Device (ED)
Chair: Naoki Hara (Fujitsu Labs.) Vice Chair: Koichi Maezawa (Univ. of Toyama)
Secretary: Seiya Kasai (Hokkaido Univ.), Koji Matsunaga (NEC)
Assistant: Toshikazu Suzuki (JAIST), Manabu Arai (New JRC)

DATE:
Mon, Dec 22, 2014 13:05 - 19:15
Tue, Dec 23, 2014 09:00 - 15:25

PLACE:

TOPICS:

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Mon, Dec 22 PM (13:05 - 19:15)
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(1) 13:05 - 13:45
[Invited Talk]
Review on recent progress in THz communications
Ho-Jin Song, Takuro Tajima, Makoto Yaita (NTT)

(2) 13:45 - 14:10
Transmitter model and its characteristic analysis for simplified terahertz ultra-wideband communications by using tunnel devices
Kiyoto Asakawa, Hirokazu Yamakura, Yuto Kato, Kaori Imori, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.)

(3) 14:10 - 14:35
Millimeterwave-photomixing by InGaAs channel HEMT and graphene channel FETs
Tetsuya Kawasaki, Tomohiro Yoshida, Kenta Sugawara, Adrian Dobroiu, Takayuki Watanabe, Hiroki Sugiyama, Hiroyuki Wakou (Tohoku Univ.), Jun-ichi Kani, Jun Terada, Shigeru Kuwano (NTT), Hiroki Ago, Kenji Kawahara (Kyushu Univ.), Katsumi Iwatsuki, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.)

(4) 14:35 - 15:00
Output power performance of InGaAs/InAlAs HEMT at 90-GHz band
Issei Watanabe (NICT), Akira Endoh (NICT/Fujistu Lab.), Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujistu Lab.)

(5) 15:00 - 15:25
Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Various Shape of Buried Gate
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT)

----- Break ( 20 min. ) -----

(6) 15:45 - 16:10
Development of Frequency-Tunable Narrowband Time-Domain Terahertz Wave Generation System
Roy Sourav, Caihong Zhang (Osaka Unv.), Yuri Avetisyan (Yerevan State Univ.), Iwao Kawayama, Hironaru Murakami, Masayoshi Tonouchi (Osaka Unv.)

(7) 16:10 - 16:35
Toward responsivity calibration of pyro-electric detectors by high-power terahertz-wave parametric source
Yuma Takida (RIKEN), Naotaka Shiba (Shizuoka Univ.), Takashi Notake, Kouji Nawata, Yu Tokizane, Shin'ichiro Hayashi (RIKEN), Norihisa Hiromoto (Shizuoka Univ.), Hiroaki Minamide (RIKEN)

(8) 16:35 - 17:00
Quantitative detection of copper surface cracks by terahertz reflection imaging
Seiya Takahashi, Tadao Tanabe, Kensaku Maeda, Tomoyuki Hamano, Kaori Nakajima, Yutaka Oyama (Tohoku Univ.)

(9) 17:00 - 17:25
Characterization of Physical Properties for Nylon-6 by Terahertz Spectroscopy
Hal Suzuki, Shinya Ishii, Chiko Otani, Hiromichi Hoshina (RIKEN)

----- Get-together meeting ( 90 min. ) -----

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Tue, Dec 23 AM (09:00 - 15:25)
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(10) 09:00 - 09:40
[Invited Talk]
Development of superconducting receivers for the ALMA project
Yoshinori Uzawa (NICT)

(11) 09:40 - 10:05
Improvement in sensitivity at 170 GHz of GaAsSb-based tunnel diodes by adjusting doping concentration
Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Shoichi Shiba, Naoki Hara, Taisuke Iwai (Fujitus Labs.)

(12) 10:05 - 10:30
Broadband characteristics of plasmonic terahertz detection using asymmetric dual-grating-gate high-electron-mobility transistors
Akira Satou, Stephane Bobanga Tombet, Takayuki Watanabe, Tetsuya Kawasaki, Tetsuya Suemitsu (Tohoku Univ.), Denis V Fateev, Vyacheslav V Popov (IREE), Hiroaki Minamide, Hiromasa Ito (RIKEN), Dominique Coquillat, Wojciech Knap (Univ. Montpellier 2), Guillaume Ducournau (IEMN), Taiichi Otsuji (Tohoku Univ.)

(13) 10:30 - 11:10
[Invited Talk]
Realization of GaN-based Terahertz Quantum Cascade Lasers using Pure Three-Level Laser Structure
Wataru Terashima, Hideki Hirayama (RIKEN)

(14) 11:10 - 11:35
Modulation barrier AlGaAs/GaAs quantum cascade laser operating at 3.7 THz
Tsung-Tse Lin, Hideki Hirayama (RIKEN)

(15) 11:35 - 12:00
Ultra-Compact Resonant-Tunneling-Diode Terahertz Oscillator Integrated with Slot-coupled Patch Antenna
Kohe Kasagi, Naoto Oshima, Safumi Suzuki, Masahiro Asada (Tokyo Tech)

----- Lunch ( 90 min. ) -----

(16) 13:30 - 14:10
[Invited Talk]
Characteristics of Terahertz wave emission from graphene/semiconductor junctions
Iwao Kawayama (Osaka Unv.)

(17) 14:10 - 14:35
Enhanced terahertz emission from monolayer graphene with metal mesh structure
Taro Itatsu, Eiichi Sano (Hokkaido Univ.), Yuhei Yabe, Victor Ryhzii, Taiichi Otsuji (Tohoku Univ.)

(18) 14:35 - 15:00
Crystal growth of GaSe crystals for the THz generation by liquid phase epitaxy TDM-CVP and evaluation
Kouhei Suzuki, Yuki Nagai, Kunihiko Yamamoto, Yohei Sato, Kensaku Maeda, Kyosuke Saito, Yutaka Oyama (Tohoku Univ.)

(19) 15:00 - 15:25
Improvement of THz emission output power from annealed Ge
Yusuke Nakasato, Sundararajan Balasekaran, Kensaku Maeda, Yutaka Oyama (Tohoku Univ.)

# Information for speakers
General Talk will have 25 minutes for presentation.
Invited Talk will have 40 minutes for presentation.

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Thu, Jan 15, 2015 - Fri, Jan 16, 2015: Kikai-Shinko-Kaikan Bldg. [Thu, Nov 13], Topics: Compound Semiconductor IC and High-Speed, High-Frequency Devices/Microwave Technologies
Thu, Feb 5, 2015 - Fri, Feb 6, 2015: Hokkaido Univ. [Fri, Dec 5], Topics: Functional nanodevices and related technologies

# SECRETARY:
Seiya Kasai (Hokkaido Univ.)
TEL : 011-706-6509 Fax : 011-716-6004
E-mail :