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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Naoki Hara (Fujitsu Labs.)
Vice Chair Koichi Maezawa (Univ. of Toyama)
Secretary Seiya Kasai (Hokkaido Univ.), Koji Matsunaga (NEC)
Assistant Toshikazu Suzuki (JAIST), Manabu Arai (New JRC)

Conference Date Mon, Dec 22, 2014 13:05 - 19:15
Tue, Dec 23, 2014 09:00 - 15:25
Topics  
Conference Place  

Mon, Dec 22 PM 
13:05 - 19:15
(1) 13:05-13:45 [Invited Talk]
Review on recent progress in THz communications
Ho-Jin Song, Takuro Tajima, Makoto Yaita (NTT)
(2) 13:45-14:10 Transmitter model and its characteristic analysis for simplified terahertz ultra-wideband communications by using tunnel devices Kiyoto Asakawa, Hirokazu Yamakura, Yuto Kato, Kaori Imori, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.)
(3) 14:10-14:35 Millimeterwave-photomixing by InGaAs channel HEMT and graphene channel FETs Tetsuya Kawasaki, Tomohiro Yoshida, Kenta Sugawara, Adrian Dobroiu, Takayuki Watanabe, Hiroki Sugiyama, Hiroyuki Wakou (Tohoku Univ.), Jun-ichi Kani, Jun Terada, Shigeru Kuwano (NTT), Hiroki Ago, Kenji Kawahara (Kyushu Univ.), Katsumi Iwatsuki, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.)
(4) 14:35-15:00 Output power performance of InGaAs/InAlAs HEMT at 90-GHz band Issei Watanabe (NICT), Akira Endoh (NICT/Fujistu Lab.), Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujistu Lab.)
(5) 15:00-15:25 Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Various Shape of Buried Gate Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT)
  15:25-15:45 Break ( 20 min. )
(6) 15:45-16:10 Development of Frequency-Tunable Narrowband Time-Domain Terahertz Wave Generation System Roy Sourav, Caihong Zhang (Osaka Unv.), Yuri Avetisyan (Yerevan State Univ.), Iwao Kawayama, Hironaru Murakami, Masayoshi Tonouchi (Osaka Unv.)
(7) 16:10-16:35 Toward responsivity calibration of pyro-electric detectors by high-power terahertz-wave parametric source Yuma Takida (RIKEN), Naotaka Shiba (Shizuoka Univ.), Takashi Notake, Kouji Nawata, Yu Tokizane, Shin'ichiro Hayashi (RIKEN), Norihisa Hiromoto (Shizuoka Univ.), Hiroaki Minamide (RIKEN)
(8) 16:35-17:00 Quantitative detection of copper surface cracks by terahertz reflection imaging Seiya Takahashi, Tadao Tanabe, Kensaku Maeda, Tomoyuki Hamano, Kaori Nakajima, Yutaka Oyama (Tohoku Univ.)
(9) 17:00-17:25 Characterization of Physical Properties for Nylon-6 by Terahertz Spectroscopy Hal Suzuki, Shinya Ishii, Chiko Otani, Hiromichi Hoshina (RIKEN)
  17:45-19:15 Get-together meeting ( 90 min. )
Tue, Dec 23 AM 
09:00 - 15:25
(10) 09:00-09:40 [Invited Talk]
Development of superconducting receivers for the ALMA project
Yoshinori Uzawa (NICT)
(11) 09:40-10:05 Improvement in sensitivity at 170 GHz of GaAsSb-based tunnel diodes by adjusting doping concentration Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Shoichi Shiba, Naoki Hara, Taisuke Iwai (Fujitus Labs.)
(12) 10:05-10:30 Broadband characteristics of plasmonic terahertz detection using asymmetric dual-grating-gate high-electron-mobility transistors Akira Satou, Stephane Bobanga Tombet, Takayuki Watanabe, Tetsuya Kawasaki, Tetsuya Suemitsu (Tohoku Univ.), Denis V Fateev, Vyacheslav V Popov (IREE), Hiroaki Minamide, Hiromasa Ito (RIKEN), Dominique Coquillat, Wojciech Knap (Univ. Montpellier 2), Guillaume Ducournau (IEMN), Taiichi Otsuji (Tohoku Univ.)
(13) 10:30-11:10 [Invited Talk]
Realization of GaN-based Terahertz Quantum Cascade Lasers using Pure Three-Level Laser Structure
Wataru Terashima, Hideki Hirayama (RIKEN)
(14) 11:10-11:35 Modulation barrier AlGaAs/GaAs quantum cascade laser operating at 3.7 THz Tsung-Tse Lin, Hideki Hirayama (RIKEN)
(15) 11:35-12:00 Ultra-Compact Resonant-Tunneling-Diode Terahertz Oscillator Integrated with Slot-coupled Patch Antenna Kohe Kasagi, Naoto Oshima, Safumi Suzuki, Masahiro Asada (Tokyo Tech)
  12:00-13:30 Lunch ( 90 min. )
(16) 13:30-14:10 [Invited Talk]
Characteristics of Terahertz wave emission from graphene/semiconductor junctions
Iwao Kawayama (Osaka Unv.)
(17) 14:10-14:35 Enhanced terahertz emission from monolayer graphene with metal mesh structure Taro Itatsu, Eiichi Sano (Hokkaido Univ.), Yuhei Yabe, Victor Ryhzii, Taiichi Otsuji (Tohoku Univ.)
(18) 14:35-15:00 Crystal growth of GaSe crystals for the THz generation by liquid phase epitaxy TDM-CVP and evaluation Kouhei Suzuki, Yuki Nagai, Kunihiko Yamamoto, Yohei Sato, Kensaku Maeda, Kyosuke Saito, Yutaka Oyama (Tohoku Univ.)
(19) 15:00-15:25 Improvement of THz emission output power from annealed Ge Yusuke Nakasato, Sundararajan Balasekaran, Kensaku Maeda, Yutaka Oyama (Tohoku Univ.)

Announcement for Speakers
General TalkEach speech will have 25 minutes for presentation.
Invited TalkEach speech will have 40 minutes for presentation.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Seiya Kasai (Hokkaido Univ.)
TEL : 011-706-6509 Fax : 011-716-6004
E--mail : irciqei
Koji Matsunaga (NEC)
TEL : 044-435-8348
E--mail : k-fpc 


Last modified: 2014-10-22 19:16:16


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