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=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Shigeyoshi Watanabe (Shonan Inst. of Tech.) Vice Chair: Toshihiro Sugii (Fujitsu Microelectronics) Secretary: Hisahiro Anzai (Sony), Tetsuro Endo (Tohoku Univ.) Assistant: Katsunori Onishi (Kyushu Inst. of Tech.) =============================================== Technical Committee on Integrated Circuits and Devices (ICD) Chair: Kunio Uchiyama (Hitachi) Vice Chair: Masahiko Yoshimoto (Kobe Univ.) Secretary: Minoru Fujishima (Univ. of Tokyo), Yoshio Hirose (Fujitsu Labs.) Assistant: Hiroaki Suzuki (Renesas), Toshimasa Matsuoka (Osaka Univ.), Kenichi Okada (Tokyo Inst. of Tech.) DATE: Thu, Jul 16, 2009 09:55 - 16:15 Fri, Jul 17, 2009 09:30 - 17:55 PLACE: International House; Main Building, Ookayama Campus, Tokyo Inst. of Tech.(2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550. 10min. walk from Ookayama Station of Tokyu Meguro Line. http://www.titech.ac.jp/english/about/campus/index.html) TOPICS: Low voltage/low power techniques, novel devices, circuits, and applications ---------------------------------------- Thu, Jul 16 AM (09:55 - 12:15) ---------------------------------------- (1) 09:55 - 10:00 Opening Address (2) 10:00 - 10:25 63GHz 36mW CMOS Differential Low-Noise Amplifier with 14GHz Bandwidth Minoru Fujishima, Youhei Natsukari (Univ.. of Tokyo.) (3) 10:25 - 10:50 A 100Mbps, 1.28mW Impulse Radio UWB Receiver with Charge-Domain Sampling Correlator in 0.18um CMOS Lechang Liu, Takayasu Sakurai, Makoto Takamiya (Univ. of Tokyo) ----- Break ( 10 min. ) ----- (4) 11:00 - 11:25 49mW 5Gbps CMOS 60GHz Pulse Receiver for Wireless Communication Ahmet Oncu, Minoru Fujishima (Univ. of Tokyo.) (5) 11:25 - 11:50 Low Energy Building Design in Packet Buffer Architecture with Deterministic Performance Guarantee Kazuya Zaitsu (Osaka City Univ.), Hisashi Iwamoto, Yasuto Kuroda, Yuji Yano (Renesas Technology), Koji Yamamoto (Renesas Design), Kazunari Inoue (Renesas Technology), Shingo Ata, Ikuo Oka (Osaka City Univ.) (6) 11:50 - 12:15 The low power circuit design techniques for 2.88Gbps UWB transceiver Naoki Oshima, Keiichi Numata, Hiroshi Kodama, Hiromu Ishikawa, Hitoshi Yano, Akio Tanaka (NEC) ----- Lunch ( 60 min. ) ----- ---------------------------------------- Thu, Jul 16 PM (13:15 - 16:15) ---------------------------------------- (7) 13:15 - 14:00 [Invited Talk] Issues and Future Prospects for Large Scale Integration using CNT devices Shinobu Fujita (Toshiba Corp.) (8) 14:00 - 14:25 A 60pJ, 3-Clock Rising Time, VTH Loss Compensated Word-line Booster Circuit for 0.5V Power Supply Embedded/Discrete DRAMs Shuhei Tanakamaru, Ken Takeuchi (Univ. of Tokyo) (9) 14:25 - 14:50 Ferroelectric(Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD) Ryoji Yajima, Teruyoshi Hatanaka (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) ----- Break ( 10 min. ) ----- (10) 15:00 - 15:25 Mobility in Silicon Nanowire GAA Transistor on (110) SOI Jiezhi Chen, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo.) (11) 15:25 - 15:50 Comprehensive Design Methodology of Dopant Profile to Suppress Gate-LER-induced Threshold Voltage Variability in sub-30 nm NMOSFETs Hidenobu Fukutome (Fujitsu Microelectronics Limited), Yoko Hori (Fujitsu Quality Lab. Limited), Kimihiko Hosaka, Yoichi Momiyama, Shigeo Satoh, Toshihiro Sugii (Fujitsu Microelectronics Limited) (12) 15:50 - 16:15 The Study of Mobility-Tinv Trade-off in Deeply Scaled High-k/Metal Gate Devices and Scaling Design Guideline for 22nm-node Generation Masakazu Goto, Shigeru Kawanaka, Seiji Inumiya, Naoki Kusunoki, Masumi Saitoh, Kosuke Tatsumura, Atsuhiro Kinoshita, Satoshi Inaba, Yoshiaki Toyoshima (Toshiba) ---------------------------------------- Fri, Jul 17 AM (09:30 - 12:25) ---------------------------------------- (1) 09:30 - 09:55 Study of stacked NAND type 1-transistor FeRAM Koichi Sugano, Shigeyoshi Watanabe (Shonan Inst. of Tech.) (2) 09:55 - 10:20 Study of stacked NAND type MRAM for universal memory Shouto Tamai, Shigeyoshi Watanabe (Shonan Inst. of Tech.) (3) 10:20 - 11:05 [Invited Talk] NanoBridge embedded into Cu interconnect Toshitsugu Sakamoto, Munehiro Tada, Yukihide Tsuji, Naoki Banno, Hiromitsu Hada (NEC Corp.), Masakazu Aono (NIMS) ----- Break ( 10 min. ) ----- (4) 11:15 - 12:00 [Invited Talk] Impact of Silicon Technology in "Beyond CMOS" World Tetsuo Endoh, Takahiro Hanyu (Tohoku Univ.) (5) 12:00 - 12:25 Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hitoshi Kume, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) ----- Lunch ( 60 min. ) ----- ---------------------------------------- Fri, Jul 17 PM (13:25 - 17:55) ---------------------------------------- (6) 13:25 - 14:10 [Invited Talk] Spin-Transistor Electronics Satoshi Sugahara (Tokyo Inst. of Tech./JST) (7) 14:10 - 14:35 Low Current Perpendicular Domain Wall Motion Cell for Scalable High-Speed MRAM Shunsuke Fukami, Tetsuhiro Suzuki, Kiyokazu Nagahara, Norikazu Ohshima (NEC Corp.), Yasuaki Ozaki (NECEL Corp.), Shinsaku Saito, Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Kaoru Mori, Chuji Igarashi, Sadahiko Miura, Nobuyuki Ishiwata, Tadahiko Sugibayashi (NEC Corp.) ----- Break ( 10 min. ) ----- (8) 14:45 - 15:30 [Invited Talk] Nanotechnology supporting to realize information society friendly to humans and the earth Shuichi Tahara (NEC Corp.) (9) 15:30 - 16:15 [Invited Talk] Development of Graphene Devices and their Future Taiichi Otsuji (Tohoku Univ.) ----- Break ( 10 min. ) ----- (10) 16:25 - 17:55 Panel Discussion : "Beyond CMOS integration with CMOS platform" Oganizer: Toshiro Hiramoto(Univ. of Tokyo) Panelists: Shinobu Fujita(Toshiba) Satoshi Sugahara(Tokyo Inst. of Tech.) Toshitsugu Sakamoto(NEC) Shuichi Tahara(NEC) Tstsuro Endo(Tohoku Univ.) Taiichi Otsuji (Tohoku Univ.) # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. Invited Talk will have 40 minutes for presentation and 5 minutes for discussion. === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Thu, Oct 29, 2009 - Fri, Oct 30, 2009: Tohoku University [Fri, Aug 7], Topics: Semiconductor process science and new technology # SECRETARY: Hisahiro Ansai(Sony) Tel 046-201-3297 Fax046-202-6572 E-mail: Hi     Ani   ny === Technical Committee on Integrated Circuits and Devices (ICD) === # FUTURE SCHEDULE: Thu, Jul 23, 2009: Tokyo Tech Front [Mon, Jun 22], Topics: Technical Meeting on Silicon Analog RF Technologies Mon, Aug 3, 2009 - Wed, Aug 5, 2009: (Atami) [Fri, Jul 17], Topics: ICD Summer School 2009 Thu, Oct 1, 2009 - Fri, Oct 2, 2009: CIC Tokyo (Tamachi) [Fri, Jul 17], Topics: Analog, Mixed analog and digital, RF, and sensor interface circuitry # SECRETARY: Minoru Fujishima (The University of Tokyo) TEL 03-5841-7425,FAX 03-5841-8575 E-mail:   eetu-  Last modified: 2009-09-07 13:31:45 |
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