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Technical Committee on Silicon Device and Materials (SDM)
Chair: Shigeyoshi Watanabe (Shonan Inst. of Tech.) Vice Chair: Toshihiro Sugii (Fujitsu Microelectronics)
Secretary: Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony)
Assistant: Syunichiro Ohmi (Tokyo Inst. of Tech.)

DATE:
Fri, Dec 5, 2008 10:30 - 16:30

PLACE:
A1-001, Katsura Campus, Kyoto University(Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan. http://www.kyoto-u.ac.jp/ja/access/campus/map6r_k.htm. Tsunenobu Kimoto. 075-383-2300)

TOPICS:
Fabrication and Characterization of Si and Si-related Materials and Devices

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Fri, Dec 5 AM (10:30 - 16:30)
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(1) 10:30 - 10:50
Effects of annealing on the structures and electrical characteristics of NiO thin films for ReRAM
Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.)

(2) 10:50 - 11:10
Research for Simplifying Structures of Si X-ray Detectors (Silicon Drift Detector) and Improving Sensitivity of High-Energy X-rays
Hideharu Matsuura, Miyuki Takahashi, Kazunori Kohara, Kazuyo Yamamoto, Taketoshi Maeda, Yoshitaka Kagawa (Osaka Electro-Communication University)

(3) 11:10 - 11:30
Low-damage high-rate sputtering of silicon induced by ethanol cluster ion beam
Hiromichi Ryuto, Ryosuke Ozaki, Gikan H. Takaoka (Kyoto Univ.)

(4) 11:30 - 11:50
Si atom movement in a-Si film by soft X-ray excitation using undulator source
Yasuyuki Takanashi, Akira Heya, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo)

----- Lunch Break ( 85 min. ) -----

(5) 13:15 - 13:50
[Invited Talk]
Mechanisms of Effective Work Function Modulation of Metal/Hf-based High-k Gate Stacks
Heiji Watanabe, Yuki Kita, Takuji Hosoi, Takayoshi Shimura (Osaka Univ.), Kenji Shiraishi (Univ. of Tsukuba), Yasuo Nara (SELETE), Keisaku Yamada (Waseda Univ.)

(6) 13:50 - 14:10
Electrical Properties of Bio-Nano-Dot Floating-gate MOSFETs with Ultra-thin Tunnel Oxide
Hiroyuki Irifune, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (Nara Institute ofScience and Tecnology)

(7) 14:10 - 14:30
Electrical properties of 4H-SiC MOS devices fabricated on C-face with NO direct oxidation
Yuki Oshiro, Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Institute of Science and Technology)

(8) 14:30 - 14:50
Improved Performance of an SiC MOSFET by a Three-Dimensional Gate Structure
Yuichiro Nanen, Hironori Yoshioka, Masato Noborio, Jun Suda, Tsunenobu Kimoto (Kyoto Univ)

----- Break ( 20 min. ) -----

(9) 15:10 - 15:30
Electrical Properties of Ferroelectric Thin Films by Alcohol Rerated Materials
Masaki Yamaguchi, Tomohiro Oba (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.)

(10) 15:30 - 15:50
Change in electrical properties of SiO2/Si interface as well as Si caused by Ultraviolet light and plasma irradiations
Megumu Takiuchi, Toshiyuki Sameshima (Tokyo University of Agriculture and Technology)

(11) 15:50 - 16:10
Amorphization of Germanium by Ion Implantatin for Shallow Junction Formation
Kosei Osada, Kentaro Shibahara (Hiroshima Univ.)

(12) 16:10 - 16:30
Electrical characterization of HfO2/Ge MIS structure treated by fluorine gas
Hideto Imajo, Hyun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.)

# Information for speakers
General Talk will have 15 minutes for presentation and 5 minutes for discussion.
Invited Talk will have 30 minutes for presentation and 5 minutes for discussion.

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Mon, Jan 26, 2009: Kikai-Shinko-Kaikan Bldg. [unfixed]
Thu, Feb 26, 2009 - Fri, Feb 27, 2009: Hokkaido Univ. [Mon, Dec 8], Topics: Functional nanodevices and related technologies

# SECRETARY:
Shigeru KAWANAKA (Toshiba)
TEL 045-776-5670, FAX 045-776-4104
E-mail