Fri, Dec 5 AM
10:30 - 16:30 |
| (1) |
10:30-10:50 |
Effects of annealing on the structures and electrical characteristics of NiO thin films for ReRAM |
Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.) |
| (2) |
10:50-11:10 |
Research for Simplifying Structures of Si X-ray Detectors (Silicon Drift Detector) and Improving Sensitivity of High-Energy X-rays |
Hideharu Matsuura, Miyuki Takahashi, Kazunori Kohara, Kazuyo Yamamoto, Taketoshi Maeda, Yoshitaka Kagawa (Osaka Electro-Communication University) |
| (3) |
11:10-11:30 |
Low-damage high-rate sputtering of silicon induced by ethanol cluster ion beam |
Hiromichi Ryuto, Ryosuke Ozaki, Gikan H. Takaoka (Kyoto Univ.) |
| (4) |
11:30-11:50 |
Si atom movement in a-Si film by soft X-ray excitation using undulator source |
Yasuyuki Takanashi, Akira Heya, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo) |
| |
11:50-13:15 |
Lunch Break ( 85 min. ) |
| (5) |
13:15-13:50 |
[Invited Talk]
Mechanisms of Effective Work Function Modulation of Metal/Hf-based High-k Gate Stacks |
Heiji Watanabe, Yuki Kita, Takuji Hosoi, Takayoshi Shimura (Osaka Univ.), Kenji Shiraishi (Univ. of Tsukuba), Yasuo Nara (SELETE), Keisaku Yamada (Waseda Univ.) |
| (6) |
13:50-14:10 |
Electrical Properties of Bio-Nano-Dot Floating-gate MOSFETs with Ultra-thin Tunnel Oxide |
Hiroyuki Irifune, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (Nara Institute ofScience and Tecnology) |
| (7) |
14:10-14:30 |
Electrical properties of 4H-SiC MOS devices fabricated on C-face with NO direct oxidation |
Yuki Oshiro, Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Institute of Science and Technology) |
| (8) |
14:30-14:50 |
Improved Performance of an SiC MOSFET by a Three-Dimensional Gate Structure |
Yuichiro Nanen, Hironori Yoshioka, Masato Noborio, Jun Suda, Tsunenobu Kimoto (Kyoto Univ) |
| |
14:50-15:10 |
Break ( 20 min. ) |
| (9) |
15:10-15:30 |
Electrical Properties of Ferroelectric Thin Films by Alcohol Rerated Materials |
Masaki Yamaguchi, Tomohiro Oba (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.) |
| (10) |
15:30-15:50 |
Change in electrical properties of SiO2/Si interface as well as Si caused by Ultraviolet light and plasma irradiations |
Megumu Takiuchi, Toshiyuki Sameshima (Tokyo University of Agriculture and Technology) |
| (11) |
15:50-16:10 |
Amorphization of Germanium by Ion Implantatin for Shallow Junction Formation |
Kosei Osada, Kentaro Shibahara (Hiroshima Univ.) |
| (12) |
16:10-16:30 |
Electrical characterization of HfO2/Ge MIS structure treated by fluorine gas |
Hideto Imajo, Hyun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) |
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