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=============================================== Technical Committee on Component Parts and Materials (CPM) Chair: Kiichi Kamimura (Shinshu Univ.) Vice Chair: Kanji Yasui (Nagaoka Univ. of Tech.) Secretary: Seiji Toyoda (NTT), Hidehiko Shimizu (Niigata Univ.) Assistant: Yasushi Takemura (Yokohama National Univ.), Naoki Oba (NTT) DATE: Fri, Nov 16, 2007 12:30 - 17:50 Sat, Nov 17, 2007 09:00 - 15:55 PLACE: Nagaoka University of Technology(1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan.By bus from Nagaoka Station： take Oote Exit. Take Gidaimae bus line at bus platform No. 7； time required is about 30 minutes. Get off at Gidaimae, the final stop.http://www.nagaokaut.ac.jp/e/index.html. Associate Professor Kanji Yasui. 0258-47-9502) TOPICS: Process of Thin Film formation and Materials, etc. ---------------------------------------- Fri, Nov 16 PM (12:30 - 17:50) ---------------------------------------- (1) 12:30 - 12:55 Analysis of the temperature dependences of Bi-2212 intrinsic Josephson junctions Chisato Mouri, Kyouhei Oguro, Takashi Yoshida, Hayataka Tominaga, Takahiro Kato, Katsuyoshi Hamasaki (Nagaoka Univ. Tech.) (2) 12:55 - 13:20 Fabrication and characterization of Bi-based high-Tc superconductor devices Takashi Yoshida, Hiroaki Nawa, Hayataka Tominaga, Atsushi Miwa, Takahiro Kato, Katsuyoshi Hamasaki (NUT), Hisashi Shimakage (NICT) (3) 13:20 - 13:45 Optical and Electrical Properties of Organic Thin Films Prepared by RF-Plasma Deposition Tengku Nadzlin Bin Tengku Ibrahim, Kunihiko Tanaka, Hisao Uchiki (Nagaoka Univ. of Tech.) (4) 13:45 - 14:10 Examination of OLEDs device Applied ITO Thin Films Deposited at Low Temperature Yusuke Nakata, Shinsuke Miyazaki, Takeshi Umetsu, Yoshihiro Itou, Masato Niki, Hidehiko Shimizu, Takeo Maruyama (Niigata Univ.), Yoichi Hoshi (Tokyo Polytechnic Univ.), Masahiro Minagawa (Nippon Seiki) ----- Break ( 10 min. ) ----- (5) 14:20 - 14:45 Evaluation of the uniformity in the properties of ZnO transparent conductive films grown by rf magnetron sputtering with a grid electrode Akira Asano (NUT), Hironori Katagiri (NNCT), Yuichiro Kuroki, Kanji Yasui, Masasuke Takata, Tadashi Akahane (NUT) (6) 14:45 - 15:10 Preparation of Mo/Si Multilayer Thin Films by Sputter-Beam Deposition Method Daisaku Nagahama, Takashi Aikoh, Makoto Hirata, Hidehiko Shimizu, Takeo Maruyama, Tetsuo Oka, Haruo Iwano (Niigata Univ.) (7) 15:10 - 15:35 HIgh rate reactive sputter-deposition of TiO2 films by using two sputtering sources Tetsuya Sakai, Osamu Kamiya, Yoichi Hoshi (Tokyo Polytechnic Univ.), Hidehiko Shimizu (Niigata Univ.) (8) 15:35 - 16:00 Temperature Coefficient Resistance of NiCr Film Resistor with ZrO2 Buffer Layer Deposited by Gas Flow Sputtering Satoshi Iwatsubo (Toyama Industrial Tech. Ctr.) ----- Break ( 10 min. ) ----- (9) 16:10 - 16:35 Characterization and barrier properties of ZrB2 thin films for Cu interconnects Mayumi B. Takeyama (Kitami Inst. of Technol.), Yasuo Nakadai, Shozo Kambara (ULVAC Materials, Inc.), Masanobu Hatanaka (ULVAC, Inc.), Atsushi Noya (Kitami Inst. of Technol.) (10) 16:35 - 17:00 Suppression of interfacial reaction and/or diffusion in Cu/ZrN/field insulating film/Si system Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Technol.) (11) 17:00 - 17:25 Crystal Growth of Cr2O3 Sputtered Films on Sapphire Substrates and platinum electrode Shummpei Otsuki, Takeshi Asada, Nobuyuki Iwata, Hiroshi Yamamoto (Nihon Univ) (12) 17:25 - 17:50 Carbon nanotube growth with dipped FeMo and FePt nanoparticle catalysts by chemical vapor deposition method Daisuke Ishizuka, Takuya Sonomura, Hiroki Okuyama, Nobuyuki Iwata, Hiroshi Yamamoto (CST, Nihon Univ.) ---------------------------------------- Sat, Nov 17 AM (09:00 - 15:55) ---------------------------------------- (13) 09:00 - 09:25 Growth of GaN by hot-mesh CVD -- Effect of Ru coated W mesh -- Yusuke Fukada, Kazuki Abe, Yuichiro Kuroki (Nagaoka Univ. Tech.), Maki Suemitsu, Takashi Ito (CIR. Tohoku Univ.), Yuzuru Narita (Kyusyu Inst. Tech.), Tetsuo Endoh (RIEC, Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Masasuke Takata, Kanji Yasui, Tadashi Akahane (Nagaoka Univ. Tech.) (14) 09:25 - 09:50 Formation and control of Ge, SiC nanodots on Si(001)-2x1 surface using monomethylgermane Tomoaki Ogiwara, Haruki Suto, Kanji Yasui, Tadashi Akahane, Masasuke Takata (NUT) (15) 09:50 - 10:15 Preparation SiC/SOI structure substrate using Hot-Mesh CVD technique，and dependence of top Si layer thickness Yuichiro Makino, Hitoshi Miura, Hiroshi Nishiyama, Kanji Yasui, Masasuke Takata, Yasunobu Inoue, Tadashi Akahane (Nagaoka Univ. of Tech.) (16) 10:15 - 10:40 Fabrication of SiC MIS Structure by RF Plasma Assisted Nitridation with DC Bias. Yoshiki Ishida, Chen Chen, Masataka Hagihara, Hiroaki Shiozawa, Akira Sengoku, Rinpei Hayashibe, Tomohiko Yamakami, Kiichi Kamimura (Shinshu Univ.) ----- Break ( 10 min. ) ----- (17) 10:50 - 11:15 Optical Properties of Cu2ZnSnS4 Bulk Single Crystals and Thin Films Prepared by Sol-Gel and Sulfurization Method Yusuke Miyamoto, Kunihiko Tanaka, Masatoshi Oonuki, Noriko Moritake, Hisao Uchiki (Nagaoka Univ.) (18) 11:15 - 11:40 Cu2ZnSnS4 thin film solar cells prepared by non-vacuum processing of sol-gel and sulfurization method Masatoshi Oonuki, Noriko Moritake, Kunihiko Tanaka, Hisao Uchiki (Nagaoka Univ.) (19) 11:40 - 12:05 Fabrication of Three-Dimensional Solar Cell used Cu2ZnSnS4 Prepared by Photo Chemical Deposition. Katsuhiko Moriya, Yusuke Saeki, Kunihiko Tanaka, Hisao Uchiki (Nagaoka Univ. of Tech.) ----- Lunch ( 70 min. ) ----- (20) 13:15 - 13:40 Characterization of EuGa2S4 Thin films Prepared by Pulsed Laser Deposition Ryohei Kaneta, Kunihiko Tanaka, Hisao Uchiki (Nagaoka Univ. Tech.) (21) 13:40 - 14:05 Optical properties of Sn-doped CaAl2S4 Hitoshi Ohta, Kunihiko Tanaka, Hisao Uchiki (Nagaoka Univ. Tech.) (22) 14:05 - 14:30 Preparation of ZnS Thin Films by Chemical Bath Method -- Experiments for Thicker Films -- Kazutaka Kamijo, Satoshi Kobayashi, Nozomu Tsuboi (Niigata Univ.) ----- Break ( 10 min. ) ----- (23) 14:40 - 15:05 Electrical properties of ZnSnAs2 thin films grown by MBE Joel T. Asubar, Tadasuke Yokoyama, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. of Tech.) (24) 15:05 - 15:30 MBE growth and low-temperature thermal annealing of ferromagnetic semiconductor (Ga,Mn)As/Zn-doped-GaAs superlattice structures Hisayuki Nakagawa, Joel T. Asubar, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. of Tech.) (25) 15:30 - 15:55 Characterization of GaSb/AlGaSb multi-quantum-well structures grown on Si substrates Hideyuki Toyota, Takeshi Yasuda, Syuusaku Fujie (Nagaoka Univ. of Tech.), (Aoyama Gakuin Univ.), Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. of Tech.) # Information for speakers General Talk (25) will have 20 minutes for presentation and 5 minutes for discussion. === Technical Committee on Component Parts and Materials (CPM) === # FUTURE SCHEDULE: Thu, Jan 17, 2008 - Fri, Jan 18, 2008: Kikai-Shinko-Kaikan Bldg [Wed, Nov 14] Fri, Feb 22, 2008: Kikai-Shinko-Kaikan Bldg. [Mon, Dec 10] # SECRETARY: Hidehiko Shimizu（Niigata University） TEL 025-262-6811, FAX 025-262-6811 E-mail:     eng  i  -u Yasushi Takemura（Yokohama National University） TEL 045-339-4151, FAX 045-339-4151 E-mail:    y Last modified: 2007-09-21 03:53:49 |
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