Fri, Jun 13 PM 13:00 - 17:25 |
(1) |
13:00-13:25 |
Surface passivation of AlGaN/GaN heterojunction field-effect transistors by SiN/AlN bilayer structure |
Nariaki Tanaka (JAIST), Yasunobu Sumida, Hiroji Kawai (POWDEC), Toshi-kazu Suzuki (JAIST) |
(2) |
13:25-13:50 |
I-V and C-V characteristics of p-GaN schottky contacts
-- Carrier concentration and metal work function dependences -- |
Yoshihiro Fukushima, Keita Ogisu, Masaaki Kuzuhara, Kenji Shiojima (Fukui Univ.) |
(3) |
13:50-14:15 |
Deep levels in AlGaN and operation stability of AlGaN/GaN HEMT |
Masafumi Tajima, Junji Kotani, Katsuya Sugawara, Tamotsu Hashizume (Hokkaido Univ.) |
(4) |
14:15-14:40 |
Characterization of N-doped AlSiO film for wide bandgap semiconductors |
Naoyoshi Komatsu, Hirotaka Tanaka, Hidemitsu Aoki, Keiko Matsunouchi, Chiharu Kimura (Osaka Univ.), Yukihiko Okumura (Maizuru National Col. of Tech.), Takashi Sugino (Osaka Univ.) |
(5) |
14:40-15:05 |
Reliability evaluation of MOCVD-grown InP/InGaAs HBTs |
Keita Ogisu, Yoshihiro Fukushima, Kenji Shiojima (Fukui Univ.), Gkou Araki, Hideo Yokohama (NTT-AT) |
|
15:05-15:20 |
Break ( 15 min. ) |
(6) |
15:20-15:45 |
Wet Cleaning Processing of VLSI Devices by Functional Waters |
Masako Kodera, Yoshitaka Matsui, Naoto Miyashita (Toshiba) |
(7) |
15:45-16:10 |
Particle Performance Improvement of Single-Wafer Wet Cleaning for Next Generation |
Ken-ichi Sano, Katsuhiko Miya, Akira Izumi, Jim Snow, Atsuro Eitoku (Dainippon Screen MFG.) |
(8) |
16:10-16:35 |
Study on Deterioration of Resist Removal Efficiency in SPM, and Experimental Proof of Ashingless Resist Removal Using Electrolyzed Sulfuric Acid Solution |
Tatsuo Nagai, Haruyoshi Yamakawa, Minoru Uchida, Toru Otsu, Norihito Ikemiya (Kurita) |
(9) |
16:35-17:00 |
Drying behavior of remaining liquid film and droplet in Marangoni drying |
Yasuharu Miyamoto (Grad. school of Shibaura inst. of Tech.), Junji Kamoshida, Jun Yamada (Shibaura Inst. of Tech.) |
(10) |
17:00-17:25 |
300mm Wafer Stain Formation by Spin Etching |
Satomi Mashimoto, Masaharu Watanabe, Keisuke Sato (SEZ JAPAN) |
Sat, Jun 14 AM 09:00 - 12:10 |
(11) |
09:00-09:25 |
InP HEMT device technology for ultra-high-speed MMIC |
Naoki Hara, Tsuyoshi Takahashi, Kozo Makiyama (Fujitsu), Toshihiro Ohki (Fujitsu Lab) |
(12) |
09:25-09:50 |
Parameter Estimation of Nonliner Equivalent Circuit in Compound Ssemiconductor Triple-Barrier Resonant Tunneling Diodes |
Yuichi Iki, Masaaki Shinada, Mamoru Naoi, Naoya Asaoka, Michihiko Suhara, Tsugunori Okumura (TMU) |
(13) |
09:50-10:15 |
Fabrication of Resonant Tunneling Devic Blocks for Fluidic Self-Assembly |
Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Kazuhiro Akamatsu (Nippon Mining & Metals) |
(14) |
10:15-10:40 |
Heterogeneous integration of InAs thin films by epitaxial lift-off and van der Waals bonding |
Hayato Takita, Masahiro Kudo, Nariaki Tanaka, Toshi-kazu Suzuki (JAIST) |
|
10:40-10:55 |
Break ( 15 min. ) |
(15) |
10:55-11:20 |
MBE growth of high In-content InGaAs/InAlAs heterojunction and its spin-orbit interaction in the 2DEG layer |
Hyonkwan Choi, Shunsuke Nitta, Syoji Yamada (CNMT JAIST) |
(16) |
11:20-11:45 |
Heteroepitaxial growth of InSb films via Si(111)-√7×√3-In surface reconstruction |
Masayuki Mori, Mitsufumi Saito, Kyohei Nagashima, Koji Ueda, Tatsuo Yoshida, Koichi Maezawa (Univ. Toyama) |
(17) |
11:45-12:10 |
Effects of In and Sb mono-layers to form rotated InSb films on a Si(111) substrate |
Mitsufumi Saito, Masayuki Mori, Koji Ueda, Koichi Maezawa (Univ. Toyama) |