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| Chair |
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Tatsuya Kunikiyo (Renesas) |
| Vice Chair |
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Takahiro Shinada (Tohoku Univ.) |
| Secretary |
|
Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas) |
| Assistant |
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Hiroya Ikeda (Shizuoka Univ.) |
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| Conference Date |
Mon, Jan 30, 2017 10:00 - 16:30 |
| Topics |
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| Conference Place |
Kikai Shinko Kaikan B3F Kenshuu-1 |
| Address |
3-5-8, Shibakoen, Minato-ku, Tokyo, 105-0011, Japan. |
| Transportation Guide |
http://www.jspmi.or.jp/english/about/access.html |
| Sponsors |
This conference is co-sponsored by The Japan Society of Applied Physics.
|
Mon, Jan 30 AM
10:00 - 16:30 |
| (1) |
10:00-10:30 |
[Invited Talk]
Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology |
Takahiro Mori, Hidehiro Asai, Junichi Hattori, Koichi Fukuda, Shintaro Otsuka, Yukinori Morita, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota, Takashi Matuskawa (ANational Institute of Advanced Industrial ScieIST) |
| (2) |
10:30-11:00 |
[Invited Talk]
Tunneling MOSFET Technologies using III-V/Ge Materials |
Shinichi Takagi, Daehwan Ahn, Munetaka Noguchi, Takahiro Gotow, Koichi Nishi, Min-Soo Kim, Mitsuru Takenaka (Univ. of Tokyo) |
| (3) |
11:00-11:30 |
[Invited Talk]
Experimental Study on Polarization-Limited Operation Speed of Negative Capacitance FET with Ferroelectric HfO2 |
Masaharu Kobayashi, , , (Univ. of Tokyo) |
| (4) |
11:30-12:00 |
[Invited Talk]
Fully Coupled 3-D Device Simulation of Negative Capacitance FinFETs for Sub 10 nm Integration |
Hiroyuki Ota, Tsutomu Ikegami, Junichi Hattori, Koichi Fukuda, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) |
| |
12:00-13:30 |
Lunch Break ( 90 min. ) |
| (5) |
13:30-14:00 |
[Invited Talk]
First Demonstration of FinFET Split-Gate MONOS for High-Speed and Highly-Reliable Embedded Flash in 16/14nm-node and Beyond |
Shibun Tsuda, Yoshiyuki Kawashima, Kenichiro Sonoda, Atsushi Yoshitomi, Tatsuyoshi Mihara, Shunichi Narumi, Masao Inoue, Seiji Muranaka, Takahiro Maruyama, Tomohiro Yamashita, Yasuo Yamaguchi (Renesas Electronics), Digh Hisamoto (Hitachi) |
| (6) |
14:00-14:30 |
[Invited Talk]
Novel Voltage Controlled MRAM (VCM) with Fast Read/Write Circuits for Ultra Large Level Cache |
Yoichi Shiota (AIST), Hiroki Noguchi, Kazutaka Ikegami, Keiko Abe, Shinobu Fujita (Toshiba), Takayuki Nozaki, Shinji Yuasa (AIST), Yoshishige Suzuki (Osaka Univ.) |
| (7) |
14:30-15:00 |
[Invited Talk]
Voltage-Control Spintronics Memory (VOCSM)Having Potentials of Ultra-Low Energy-Consumption and High-Density |
Hiroaki Yoda, , , , , , , , , , , , , , (Toshiba) |
| |
15:00-15:30 |
Break ( 30 min. ) |
| (8) |
15:30-16:00 |
[Invited Talk]
General relationship for cation and anion doping effects on ferroelectric HfO2 formation |
Xu Lun, Shibayama Shigehisa, Izukashi Kazutaka, Nishimura Tomonori, Yajima Takeaki (Univ. of Tokyo), Migita Shinji (AIST), Toriumi Akira (Univ. of Tokyo) |
| (9) |
16:00-16:30 |
[Invited Talk]
Novel Functional Passive Element for Future Analogue Signal Processing
-- Fabrication and Application of the VO2 Volatile Switch -- |
Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) |
| Announcement for Speakers |
| Invited Talk | Each speech will have 25 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E- :        e3   |
Last modified: 2016-12-16 14:59:58
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