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=============================================== Technical Committee on Lasers and Quantum Electronics (LQE) Chair: Toshitada Umezawa (NICT) Vice Chair: Junichi Takahara (Osaka Univ.) Secretary: Toru Segawa (NTT), Kazuue Fujita (Hamamatsu Photonics) Assistant: Shinsuke Tanaka (Fujitsu), Nobuhiko Nishiyama (Tokyo Inst. of Tech.) =============================================== Technical Committee on Electron Devices (ED) Chair: Hiroki Fujishiro (Tokyo Univ. of Science) Vice Chair: Seiya Sakai (Hokkaido Univ.) Secretary: Junji Kotani (Fjitsu Lab.), Takuya Tsutsumi (NTT) Assistant: Ryota Isonoi (SCIOCS), Yoshitugu Yamamoto (Mitsubishi Electric) =============================================== Technical Committee on Component Parts and Materials (CPM) Chair: Yuichi Nakamura (Toyohashi Univ. of Tech.) Vice Chair: Hideki Nakazawa (Hirosaki Univ.) Secretary: Tomoaki Terasako (Ehime Univ.), Mayumi Takeyama (Kitami Inst. of Tech) Assistant: Yasuo Kimura (Tokyo Univ. of Tech.), Fumihiko Hirose (Yamagata Univ.), Noriko Bamba (Shinshu Univ.) DATE: Thu, Nov 25, 2021 10:00 - 17:20 Fri, Nov 26, 2021 13:00 - 17:20 PLACE: TOPICS: ---------------------------------------- Thu, Nov 25 AM (10:00 - 11:45) ---------------------------------------- (1) 10:00 - 10:05 (2) 10:05 - 10:30 Chemical Bath Deposition of Cu<sub>2</sub>O films on ITO/glass substrates Taishu kamimoto, Takuma Ohmoto, Tomoaki Terasako (Ehime Univ.) (3) 10:30 - 10:55 Vapor-Liquid-Solid Growth of ZnGa<sub>2</sub>O<sub>4</sub> Nanostructures and Their Structural and Photoluminescence Properties Tomoaki Terasako, Takeshi Yoneda (Ehime Univ.), Naohiro Takahashi, Masakazu Yagi (Natl. INst. Technol., Kagawa Coll.) (4) 10:55 - 11:20 Investigation of defects suppression in Cu halide thin films by emission spectroscopy Chikashi Fujishima, Kunihiko Tanaka, Kaito Watanabe, Naoya Tujimoto (Nagaoka Univ Tech) (5) 11:20 - 11:45 Influence of Annealing on Ultraviolet Light Detecting Properties of PEDOT:PSS/ZnO Nanorods/ZnO:Ga Heterostructures Kohei Kobayashi, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.) ----- Break ( 75 min. ) ----- ---------------------------------------- Thu, Nov 25 PM (13:00 - 14:35) ---------------------------------------- (1) 13:00 - 13:05 (2) 13:05 - 13:30 [Encouragement Talk] Optimization of buried growth and optical properties for nanowire-based light emitter Yoshiya Miyamoto, Naoki Sone, Renji Okuda, Weifang Lu, Kazuma Ito, Shiori Yamamura, Yukimi Jinno, Nanami Nakayama, Sae Katsuro, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ.) (3) 13:30 - 13:55 Indium Composition Dependence of Internal Quantum Efficiency in InGaN Quantum-Wells Measured by Simultaneous Microscopic Photoacoustic and Photoluminescence Spectroscopy Keito Mori, Yuchi Takahashi, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.) (4) 13:55 - 14:20 Waveguide loss measurements in III-nitride laser structures Kenta Ogasawara (KIT), Shigeta Sakai, Tadashi Okumura, Koichi Naniwae (Ushio Inc), Atsushi A. Yamaguchi (KIT) ----- Break ( 15 min. ) ----- ---------------------------------------- Thu, Nov 25 (14:35 - 16:05) ---------------------------------------- (5) 14:35 - 15:00 Photoluminescence study of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy Hiroto Imashiro, Ryo Yamahida, Hironao Kanamori, Ryuichi Watanabe (KIT), Takeshi Kimura, Taichiro Konno, Hajime Fujikura (SCIOCS), Atsushi A. Yamaguchi (KIT) (6) 15:00 - 15:25 Theoretical modeling of temperature-dependent PL spectra in InGaN quantum wells Shunya Hakamata, Takashi Fujita, Ryuichi Watanabe, Atsushi A Yamaguchi (KIT) (7) 15:25 - 15:50 Optical characterization of c-plane Al0.83In0.17N/GaN lattice-matched heterostructures Liyang Li, Kohei Shima (Tohoku Univ.), Mizuki Yamanaka (Nagoya Inst. Tech.), Kazunobu Kojima (Tohoku Univ.), Takashi Egawa (Nagoya Inst. Tech.), Akira Uedono (Univ. of Tsukuba), Ishibashi Shoji (AIST), Tetsuya Takeuchi (Meijo Univ.), Makoto Miyoshi (Nagoya Inst. Tech.), Shigefusa Chichibu (Tohoku Univ.) ----- Break ( 15 min. ) ----- ---------------------------------------- Thu, Nov 25 (16:05 - 17:20) ---------------------------------------- (8) 16:05 - 16:30 Substrate off-cut angle dependence on fabrication of high-temperature annealed a-plane AlN on r-plane sapphire Kota Shibutani, Kenjiro Uesugi, Shiyu Xiao, Kanako Shojiki, Shigeyuki Kuboya, Toru Akiyama, Hideto Miyake (Mie Univ.) (9) 16:30 - 16:55 Growth of 220-nm-band-emission AlGaN Quantum Wells Using Annealed Sputtered AlN Template Shoya Ishihara, Shigeyuki Kuboya, Kanako Shojiki, Kenjiro Uesugi, Xiao Shiyu, Hideto Miyake (Mie Univ.) (10) 16:55 - 17:20 Evaluation of PV performance of GaInN besed photovoltaic cells under monochromatic light illumination for optical wireless power transmission system Taiki Nakabayashi, Kousuke Yamamoto, Pradip Dalapati, Takashi Egawa, Makoto Miyoshi (NIT) ---------------------------------------- Fri, Nov 26 PM (13:00 - 17:20) ---------------------------------------- (11) 13:00 - 13:25 Two-dimensional characterization of Au/Ni/n-GaN Schottky contacts with different surface treatments by scanning internal photoemission microscopy Kenji Shiojima (Univ. of Fukui), Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Edo Masaharu (Fuji electric co.) (12) 13:25 - 13:50 Uniformity characterization of SiC, GaN, α-Ga₂O₃ Schottky contacts using scanning internal photoemission microscopy Yuto Kawasumi (Univ. of Fukui), Fumimasa Horikiri, Noboru Fukuhara (SCIOCS Co.), Tomoyoshi Mishima (Hosei Univ.), Takashi Shinohe (FLOSFIA INC.), Kenji Shiojima (Univ. of Fukui) (13) 13:50 - 14:15 Interface charge engineering in normally-off AlTiO/AlGaN/GaN field-effect transistors Duong Dai Nguyen, Takehiro Isoda, Yuchen Deng, Toshi-kazu Suzuki (JAIST) ----- Break ( 15 min. ) ----- (14) 14:30 - 14:55 Estimation of electrical characteristics of normally-off type AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Keitaro Toda, Toshiharu Kubo, Takashi Egawa (NITech) (15) 14:55 - 15:20 High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (NIT) (16) 15:20 - 15:45 Fabrication and electrical property characterization of AlGaN channel HEMT on AlN template Ryuichi Mori, Kenjiro Uesugi, Shegeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.) ----- Break ( 15 min. ) ----- (17) 16:00 - 16:25 Fabrication of Recessed-gate AlGaN/GaN HEMTs using Low-damage Contactless Photo-Electrochemical Etching Masachika Toguchi, Kazuki Miwa (Hokkaido Univ.), Fumimasa Horikiri, Noboru Fukuhara, Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokkaido Univ.) (18) 16:25 - 16:50 Fabrication of Recessed-gate AlGaInN/AlGaN HFETs utilizing a photo-electrochemical (PEC) etching. Kosaku Ito, Yuto Komatsu, Masachika Toguchi (Hokkaido Univ.), Akiyoshi Inoue, Sakura Tanaka, Makoto Miyoshi (Nagoya Inst. of Tech), Taketomo Sato (Hokkaido Univ.) (19) 16:50 - 17:15 Demonstration of E-mode operation in planar type EID-MOS-HEMT with normally depleted AlGaN/GaN epitaxial layer Takuma Nanjo, Takashi Imazawa, Akira Kiyoi, Tetsuro Hayashida, Tatsuro Watahiki, Naruhisa Miura (Mitsubishi Electric Corp.) (20) 17:15 - 17:20 # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. === Technical Committee on Lasers and Quantum Electronics (LQE) === # SECRETARY: Toru Segawa (NTT) TEL +81-46-240-2251 E-mail:         hco  # ANNOUNCEMENT: # Homepage of LQE is http://www.ieice.org/~lqe/jpn/welcome.html === Technical Committee on Electron Devices (ED) === # FUTURE SCHEDULE: Thu, Dec 9, 2021: Online [Wed, Oct 20] Mon, Dec 20, 2021 - Tue, Dec 21, 2021 (tentative): [Fri, Oct 22] Thu, Jan 27, 2022: Online [Fri, Nov 12] # SECRETARY: Toshiyuki Oishi(Saga Unv.) TEL: +81-952-28-8642 E-mail: oi  104cc -u Tatsuya Iwata(Toyama Pref. Univ.) TEL: +81-766-56-7500 E-mail: t_i  pu-  === Technical Committee on Component Parts and Materials (CPM) === Last modified: 2021-11-12 09:18:26 |
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