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Technical Committee on Electron Device (ED)
Chair: Koichi Maezawa (Univ. of Toyama) Vice Chair: Kunio Tsuda (Toshiba)
Secretary: Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST)
Assistant: Manabu Arai (New JRC), Masataka Higashiwaki (NICT)

DATE:
Thu, Oct 22, 2015 13:30 - 16:45
Fri, Oct 23, 2015 09:00 - 12:15

PLACE:

TOPICS:

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Thu, Oct 22 PM (13:30 - 16:45)
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(1) 13:30 - 13:55
Electron Trajectory and Electrode Geometry of Double-Gated Spindt-Type Field Emitter Array
Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.), Masayoshi Nagao (AIST)

(2) 13:55 - 14:20
Estimation of charge density distribution on a dielectric surface using an electron beam probe.
Takuya Nakashima, Hidekazu Murata (Meijo Univ.), Hiroyuki Suhara (RICOH), Hiroshi Shimoyama (Meijo Univ.)

(3) 14:20 - 14:45
Emission characteristics of double-gated field emitter arrays for FEA-HARP image sensor
Yuki Honda, Masakazu Nanba, Kazunori Miyakawa, Misao Kubota (NHK), Masayoshi Nagao (AIST), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Norifumi Egami (Kinki Univ.)

----- Break ( 20 min. ) -----

(4) 15:05 - 15:30
Electron ray tracing from Field Emitter Array incorporated with electrostatic lens
-- Calculation of current profile --
Hiroyasu Goto, Hidekazu Murata, Hiroshi Shimoyama (Meijo Univ)

(5) 15:30 - 15:55
Study on Long time of Magnetron by Computer Exprements
Keita Hirayama, Mitani Tomohiko, Naoki Shinohara (Kyoto Univ.), Kohei Kawata, Nagisa kuwahara (Panasonic)

(6) 15:55 - 16:20
A Study of 300GHz band TWT Design with Folded Waveguide fabricated by Micro Electro Mechanical Systems
Kunio Tsutaki, Yoichiro Neo, Hidenori Mimura (Sizuoka Univ.), Norio Masuda, Mitsuru Yoshida, Junichi Matsuoka (NETS)

(7) 16:20 - 16:45
Development Activity of Vacuum Electronics in THz Band
Mitsuru Yoshida, Koji Okamoto, Norio Masuda, Junichi Matsuoka (NETS), Norihiko Sekine, Atsushi Kanno, Naokatsu Yamamoto, Iwao Hosako (NICT)

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Fri, Oct 23 AM (09:00 - 12:15)
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(8) 09:00 - 09:25
Adsorption of copper phthalocyanine on surfaces of nanopyramid grown via surface diffusion of nobel-metal atoms
Hirotaka Asai, Shigeya Kumagai, Daisei Asai, Shuji Kato, Hidekazu Murata, Eiji Rokuta (Meijo Univ), Chuhei Oshima (Waseda Univ)

(9) 09:25 - 09:50
Ab initio calculations of field emission from carbon emitters on the basis of time-dependent density functional theory (I)
Toshiharu Higuchi, Masahiro Sasaki, Yoichi Yamada (Tsukuba Univ.)

(10) 09:50 - 10:15
Technical issue of volcano-structured Spindt-type Mo/Ni field emitter array
Masayoshi Nagao (AIST)

----- Break ( 20 min. ) -----

(11) 10:35 - 11:00
Prototyping of electron emitters using heavily N-doped diamond
-- Fabrication of built-in electrode and flat surface structured emitter with mold growth technique --
Taishi Ebisudani (ICU), Tomoaki Masuzawa (Shizuoka Univ.), Takatoshi Yamada (AIST), Jun Ochiai, Ichitaro Saito, Ken Okano (ICU)

(12) 11:00 - 11:25
Surface activation process of GaAs photocathode and spectroscopic analysis of its photoemission characteristics
Tomoaki Masuzawa, Keigo Mitsuno, Yoshinori Hatanaka, Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.)

(13) 11:25 - 11:50
Study on the photoresponse of silicon field emitter arrays
Hidetaka Shimawaki (Hachinohe Inst. of Tech.), Masayoshi Nagao (AIST), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.)

(14) 11:50 - 12:15
Influence of height and atomic arrangement of nano-protrusion of gas field ion emitter on He-ion current
Shigekazu Nagai, Shu Katoh, Tatsuo Iwata, Kazuo Kajiwara, Koichi Hata (Mie Univ.)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Thu, Nov 26, 2015 - Fri, Nov 27, 2015: Osaka City University Media Center [Wed, Sep 16], Topics: Nitride Semiconductor Devices, Materials, Related Technologies
Mon, Dec 21, 2015 - Tue, Dec 22, 2015: RIEC, Tohoku Univ [Mon, Oct 19], Topics: Millimeter-wave, terahertz-wave devices and systems
Wed, Jan 20, 2016: Kikai-Shinko-Kaikan Bldg. [Tue, Nov 17], Topics: Power Devices and High-frequency Devices, Microwave, etc.

# SECRETARY:
Tetsuzo Ueda（Panasonic)
TEL：+81-6-6906-4940、FAX：+81-6-6906-2426
E-mail：