ken-system: Advance Program

IEICE Technical Committee Submission System
Advance Program

Online Proceedings
[Sign in]
Tech. Rep. Archives

===============================================
Technical Committee on Microwaves (MW)
Chair: Kiyomichi Araki Vice Chair: Osamu Hashimoto
Secretary: Ichihiko Toyoda, Ken-ichi Maruhashi
Assistant: Tadashi Kawai, Koji Wada

===============================================
Technical Committee on Electron Device (ED)
Chair: Takao Waho Vice Chair: Masaaki Kuzuhara
Secretary: Tsuyoshi Tanaka, Manabu Arai
Assistant: Shin-ichiro Takatani

DATE:
Wed, Jan 18, 2006 13:30 - 16:35
Thu, Jan 19, 2006 10:20 - 16:00
Fri, Jan 20, 2006 09:00 - 18:10

PLACE:

TOPICS:
Compound Semiconductor IC and High-Speed, High-Frequency Devices

----------------------------------------
Wed, Jan 18 PM (13:30 - 16:35)
----------------------------------------

(1) 13:30 - 13:55
A Low-Phase-Noise 76-GHz Planar Gunn VCO Using Flip-Chip Bonding Technology
Takashi Yoshida, Yoshimichi Fukasawa, Tadayoshi Deguchi, Kiyoshi Kawaguchi, Takahiro Sugiyama, Atsushi Nakagawa (New Japan Radio)

(2) 13:55 - 14:20
Over 40-Gbit/s Digital Circuits Using InP HEMT Technology
Toshihide Suzuki, Yoichi Kawano, Yasuhiro Nakasha, Kozo Makiyama, Tsuyoshi Takahashi, Naoki Hara, Tatsuya Hirose (Fujitsu Labs.)

(3) 14:20 - 14:45
Up to 80-Gbit/s Operations of 1:4 Demultiplexer IC with InP HBTs
Kimikazu Sano, Hiroyuki Fukuyama, Koichi Murata, Kenji Kurishima, Norihide Kashio, Takatomo Enoki, Hirohiko Sugahara (NTT PH Labo.)

(4) 14:45 - 15:10
120-GHz Band 10-Gbit/s Millimeter-wave MMIC Waveguide Modules for Wireless Access System
Toshihiko Kosugi (NTT Photonics Lab.), Akihiko Hirata (NTT Microsystem Integration Lab.), Masami Tokumitsu, Hirohiko Sugahara (NTT Photonics Lab.)

----- Break ( 10 min. ) -----

(5) 15:20 - 15:45
Increase of colllector current in hot eletron transistors controlled by gate bias
Issei Kashima, Akira Suwa (Tokyo Tech), Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech JST-CREST)

(6) 15:45 - 16:10
Prediction of High-Frequency Characteristics for Hot-Electron Transistors Controlled by Gate Bias
Nobuya Machida, Mitsuhiko Igarashi, Tomohiro Yamada, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech.)

(7) 16:10 - 16:35
Effects of surface recombination on dc characteristics of InGaP/GaAs heterojunction bipolar transistors(HBT’s)
Airi Kurokawa, Zhi Jin, Hiroshi Ono, Kazuo Uchida, Shinji Nozaki, Hiroshi Morisaki (UEC)

----------------------------------------
Thu, Jan 19 AM (10:20 - 16:00)
----------------------------------------

(8) 10:20 - 10:45
Analysis of Slow Current Transients and Current Collapse in GaN FETs
Hiroki Takayanagi, Keiichi Itagaki, Hiroyuki Nakano, Kazushige Horio (Shibaura Inst. Tech.)

(9) 10:45 - 11:10
Analysis of Gate-Lag Phenomena in Unpassivarwd AlGaN/GaN HEMTs
Alberto F. Basile, Junji Kotani, Tamotsu Hashizume (Hokkaido Univ)

(10) 11:10 - 11:35
C-V characterization of GaN-based MIS structures at high temperatures
Hiroki Kato, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.)

(11) 11:35 - 12:00
Investigation of Bandgap Bowing Parameter of Lattice-Matched Wurtzite InAlGaN Quarternary Alloy
Toshiyuki Takizawa, Satoshi Nakazawa, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric), Takashi Egawa (Nagoya Inst. Tech.)

----- Lunch Break ( 80 min. ) -----

(12) 13:20 - 13:45
AlGaN/GaN HFETs with a low-temperature GaN cap layer
Tadayoshi Deguchi, Eiji Waki, Satoru Ono, Meiichi Yamashita, Atsushi Kamada, Atsushi Nakagawa (New Japan Radio), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Institute of Technology)

(13) 13:45 - 14:10
AlGaN/GaN-HEMTs with Recessed Ohmic Electrodes on Si
Juro Mita, Katsuaki Kaifu, Masanori Itoh, Yoshiaki Sano (Oki), Hiroyasu Ishikawa, Takashi Egawa (Nitech)

(14) 14:10 - 14:35
Normally-off Operation of AlGaN/GaN Heterojunction Field Effect Transistors on Non-polar (11-20) plane
Masayuki Kuroda, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric)

----- Break ( 10 min. ) -----

(15) 14:45 - 15:10
0.15-mm-dual-gate AlGaN/GaN HEMT mixers
Kenji Shiojima, Takashi Makimura, Toshihiko Kosugi, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama (NTT)

(16) 15:10 - 15:35
Highly Uniform GaN-HEMT on 3-inch Conductive SiC Substrate for Wireless Basestation Applications
Toshihide Kikkawa, Kenji Imanishi, Masahito Kanamura, Kazukiyo Joshin (Fujitsu Labs.)

(17) 15:35 - 16:00
High Power AlGaN/GaN MIS-HEMT
Masahito Kanamura, Toshihide Kikkawa, Taisuke Iwai, Kenji Imanishi, Tokuro Kubo, Kazukiyo Joshin (Fujitsu Labs. Ltd.)

----------------------------------------
Fri, Jan 20 AM (09:00 - 18:10)
----------------------------------------

(18) 09:00 - 09:25
-
-- - --
Koji Wada, Shin Matsumoto, Takashi Iwasaki (UEC)

(19) 09:25 - 09:50
-
-- - --
Kosei Tanii (UEC), Futoshi Nishimura, Kouji Sasabe, Yoshiaki Ueno (Matsushita Electric Works), Koji Wada, Takashi Iwasaki (UEC)

(20) 09:50 - 10:15
A Novel Bandpass Filter with Sharp Attenuations and Wide Stopbands Developed Through the Combined Use of Composite Resonators and Stepped Impedance Resonators
Hitoshi Miki, Zhewang Ma, Yoshio Kobayashi (Saitama Univ.), Tetsuo Anada (Kanagawa Univ.), Gen Hagiwara (Link Circuit Inc.)

(21) 10:15 - 10:40
A Novel Dual-Band Bandpass Filter Using Composite Resonators
Zhewang Ma, Taichi Shimizu, Hitoshi Miki, Yoshio Kobayashi (Saitama Univ.), Tetsuo Anada (Kanagawa Univ.), Gen Hagiwara (Link Circuit Inc.)

----- Break ( 10 min. ) -----

(22) 10:50 - 11:15
Left-handed line constructed by using grounded coplanar strip
Rei Goto, Hiroyuki Deguchi, Mikio Tsuji, Hiroshi Shigesawa (Doshisha Univ.)

(23) 11:15 - 11:40
90 Degree Hybrid with Insensitivity to Misalignment and Thickness Variation of Multi-layered LTCC Substrate
Takeshi Yuasa, Yukihiro Tahara, Hideyuki Oh-hashi (Mitsubishi Electric Co.)

(24) 11:40 - 12:05
A Frequency-Tunable Amplifier with a T-Shaped Tunable Adimittance-Inverter
Hiromitsu Uchida, Kentaro Ogura, Naofumi Yoneda, Yoshihiko Konishi, Shigeru Makino (Mitsubishi Electric Corp.)

----- Lunch Break ( 90 min. ) -----

(25) 13:35 - 14:00
Highly Linear VCO with Voltage Converter
Hiroyuki Mizutani, Masaomi Tsuru, Takayuki Matsuzuka, Kenichiro Choumei, Kenji Kawakami, Moriyasu Miyazaki (Mitsubishi Electric)

(26) 14:00 - 14:25
-
Futoshi Kuroki, Shohei Ishikawa (KNCT), Tsukasa Yoneyama (Tohoku Inst. of Tech.)

(27) 14:25 - 14:50
-
Futoshi Kuroki, Yusuke Murata, Ryo-ta Masumoto (KNCT), Tsukasa Yoneyama (Tohoku Inst. of Tech.)

(28) 14:50 - 15:15
-
Futoshi Kuroki, Hiroshi Ohta (KNCT), -, - (Sharp)

----- Break ( 10 min. ) -----

(29) 15:25 - 15:50
Study on EM Environment at ETC Tollgate with Multiple Lane
Hirotomo Ichinose, Satoshi Ozaki, Osamu Hashimoto (Aoyama Gakuin Univ.), (Central Nippon Expressway)

(30) 15:50 - 16:15
Examinations of the propagation characteristics on a rectangle wave using FDTD, CIP and R-CIP methods
Youichi Kakuta, Shinya Watanabe, Osamu Hashimoto (AGU)

(31) 16:15 - 16:40
Analytical and experimental examinations of temeprature distribution of λ/4 type wave absorber using resistive film under high power injection
Shinya Watanabe, Kota Saito, Akitoshi Taniguti, Osamu Hashimoto (AGU), Toshifumi Saito (TDK)

----- Break ( 10 min. ) -----

(32) 16:50 - 18:10
[Special Talk]
A Report on the 35th European Microwave Conference
Tetsuo Anada (Kanagawa University), Hiroshi Kubo (Yamaguchi University), Futoshi Kuroki (Kure National College of Technology), Hiroyuki Deguchi (Doshisha University), Hiromitsu Uchida, Tamotsu Nishino, Koji Yamanaka (Mitsubishi), (Eudyna), Munenari Kawashima (NTT)

# Information for speakers
General Talk (25分) will have 20 minutes for presentation and 5 minutes for discussion.

=== Technical Committee on Microwaves (MW) ===
# FUTURE SCHEDULE:

Feb, 2006: Recess
Wed, Mar 1, 2006 - Fri, Mar 3, 2006: YRP [Sat, Dec 10]
Thu, Apr 20, 2006: ISTEC-SRL (Shinonome) [Mon, Feb 13], Topics: microwave, superconductivity, etc.

# SECRETARY:
Koji Wada(UEC)
TEL:0424-43-5212,FAX:0424-43-5212
E-mail:

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Thu, Jan 26, 2006 - Fri, Jan 27, 2006: Hokkaido Univ. [Wed, Nov 16], Topics: -
Thu, Mar 2, 2006 - Fri, Mar 3, 2006: [Wed, Dec 21]
Mon, Apr 17, 2006 - Tue, Apr 18, 2006: Wel-Oohori [Wed, Feb 15], Topics: Thin-Film (Si, Compound, Organic) Functional Devices, Materials, and Analysis

# SECRETARY:
Tsuyoshi Tanaka（Matsushita）
TEL: 075-956-9083, FAX: 075-956-9110
E-mail: