Thu, Nov 13 PM
13:00 - 16:00 |
| |
13:00-13:10 |
Introductory talk ( 10 min. ) |
| (1) |
13:10-14:00 |
[Invited Talk]
Circuit designs of Analog Circuits in Advanced System LSIs |
Shiro Dosho, Shiro Sakiyama, Takashi Morie, Kazuo Matsukawa (Matsushita Electric Co. Ltd.) |
| (2) |
14:00-14:50 |
[Invited Talk]
Circuit Design and Device Modeling for Millimeter-Wave CMOS Applications |
Minoru Fujishima (Univ. of Tokyo) |
| |
14:50-15:10 |
Break ( 20 min. ) |
| (3) |
15:10-15:35 |
A 13.75ns fast holographic reconfiguration |
Mao Nakajima, Minoru Watanabe (Shizuoka Univ.) |
| (4) |
15:35-16:00 |
Fault tolerance of the holographic memory in the large scale opptically reconfigurable gate array. |
Daisaku Seto, Minoru Watanabe (Shizuoka Univ.) |
Fri, Nov 14 AM
10:00 - 11:40 |
| (5) |
10:00-10:25 |
A 3D simulator for designing next generation semiconductor devices, Part 1
-- Development of a strongly stable simulator -- |
Shogo Sakurai, Zhu Riming, Masahiro Sato, Ken Yamaguchi (AdvanceSoft Corp.) |
| (6) |
10:25-10:50 |
A 3D silumator for designing next generation semiconductor devices, Part2
-- Quick generators of 3D structures and high-quaulity meshes -- |
Zhu Riming, Masahiro Sato, Shogo Sakurai, Ken Yamaguchi (AdvanceSoft Corp.) |
| (7) |
10:50-11:15 |
A Discretization Method of Quantum Drift-Diffusion Model for Time-Dependent Device Simulations |
Tomoko Shimada, Shinji Odanaka (Osaka Univ.) |
| (8) |
11:15-11:40 |
Impact of Non-parabolic Band on Threshold Voltage Shift of Nano-sacle SOI MOSFET
-- Proposal of Model and Examination of its Availability -- |
Daisuke Kyokane, Yasuhisa Omura (Kansai Univ.) |
Fri, Nov 14 PM
13:00 - 17:05 |
| (9) |
13:00-13:50 |
[Invited Talk]
LDMOS Device Modeling and Circuit Design
-- Device Modeling for Circuit Design -- |
Hirobumi Watanabe, Takaaki Negoro (Ricoh Co. Ltd.) |
| (10) |
13:50-14:40 |
[Invited Talk]
[Invited]Robust Design of Embedded SRAM on Deep-submicron Technology |
Koji Nii, Makoto Yabuuchi, Yasumasa Tsukamoto, Shigeki Ohbayashi, Hirofumi Shinohara (Renesas Technology Corp.) |
| |
14:40-15:00 |
Break ( 20 min. ) |
| (11) |
15:00-15:25 |
A Quantum Mechanical Study of Effect of Single Attractive Ions on Electron Transport in Nanoscale Transistors |
Yoshinari Kamakura, Gennady Mil'nikov, Nobuya Mori (Osaka Univ.), Tatsuya Ezaki (Hiroshima Univ.) |
| (12) |
15:25-15:50 |
Three-dimensional NEGF simulation of gate tunnel current in ultra-small MOSFETs |
Hideki Minari, Daisuke Nishitani, Nobuya Mori (Osaka Univ.) |
| (13) |
15:50-16:15 |
High-field Transport in Silicon Analyzed by Flux Equation |
Naohito Morozumi, Kenji Natori (Univ. of Tsukuba) |
| (14) |
16:15-16:40 |
Three-Dimensional Quantum Transport Simulation of Si-Nanowire Transistors |
Yoshihiro Yamada, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) |
| (15) |
16:40-17:05 |
First-Principles Simulation of Electronic Bandstructures on Nanoscaled-Si Channels with Strain Effects |
Tadashi Maegawa, Tsuneki Yamauchi, Takeshi Hara, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) |
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