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| Chair |
|
Shigeyoshi Watanabe (Shonan Inst. of Tech.) |
| Vice Chair |
|
Toshihiro Sugii (Fujitsu Microelectronics) |
| Secretary |
|
Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony) |
| Assistant |
|
Syunichiro Ohmi (Tokyo Inst. of Tech.) |
|
| Conference Date |
Thu, Nov 13, 2008 13:00 - 16:00
Fri, Nov 14, 2008 10:00 - 17:05 |
| Topics |
Process, Device, Circuit Simulation, etc. |
| Conference Place |
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Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Thu, Nov 13 PM
13:00 - 16:00 |
| |
13:00-13:10 |
Introductory talk ( 10 min. ) |
| (1) |
13:10-14:00 |
[Invited Talk]
Circuit designs of Analog Circuits in Advanced System LSIs  SDM2008-169 |
Shiro Dosho, Shiro Sakiyama, Takashi Morie, Kazuo Matsukawa (Matsushita Electric Co. Ltd.) |
| (2) |
14:00-14:50 |
[Invited Talk]
Circuit Design and Device Modeling for Millimeter-Wave CMOS Applications SDM2008-170 |
Minoru Fujishima (Univ. of Tokyo) |
| |
14:50-15:10 |
Break ( 20 min. ) |
| (3) |
15:10-15:35 |
A 13.75ns fast holographic reconfiguration SDM2008-171 |
Mao Nakajima, Minoru Watanabe (Shizuoka Univ.) |
| (4) |
15:35-16:00 |
Fault tolerance of the holographic memory in the large scale opptically reconfigurable gate array. SDM2008-172 |
Daisaku Seto, Minoru Watanabe (Shizuoka Univ.) |
Fri, Nov 14 AM
10:00 - 11:40 |
| (5) |
10:00-10:25 |
A 3D simulator for designing next generation semiconductor devices, Part 1
-- Development of a strongly stable simulator -- SDM2008-173 |
Shogo Sakurai, Zhu Riming, Masahiro Sato, Ken Yamaguchi (AdvanceSoft Corp.) |
| (6) |
10:25-10:50 |
A 3D silumator for designing next generation semiconductor devices, Part2
-- Quick generators of 3D structures and high-quaulity meshes -- SDM2008-174 |
Zhu Riming, Masahiro Sato, Shogo Sakurai, Ken Yamaguchi (AdvanceSoft Corp.) |
| (7) |
10:50-11:15 |
A Discretization Method of Quantum Drift-Diffusion Model for Time-Dependent Device Simulations SDM2008-175 |
Tomoko Shimada, Shinji Odanaka (Osaka Univ.) |
| (8) |
11:15-11:40 |
Impact of Non-parabolic Band on Threshold Voltage Shift of Nano-sacle SOI MOSFET
-- Proposal of Model and Examination of its Availability -- SDM2008-176 |
Daisuke Kyokane, Yasuhisa Omura (Kansai Univ.) |
Fri, Nov 14 PM
13:00 - 17:05 |
| (9) |
13:00-13:50 |
[Invited Talk]
LDMOS Device Modeling and Circuit Design
-- Device Modeling for Circuit Design -- SDM2008-177 |
Hirobumi Watanabe, Takaaki Negoro (Ricoh Co. Ltd.) |
| (10) |
13:50-14:40 |
[Invited Talk]
[Invited]Robust Design of Embedded SRAM on Deep-submicron Technology SDM2008-178 |
Koji Nii, Makoto Yabuuchi, Yasumasa Tsukamoto, Shigeki Ohbayashi, Hirofumi Shinohara (Renesas Technology Corp.) |
| |
14:40-15:00 |
Break ( 20 min. ) |
| (11) |
15:00-15:25 |
A Quantum Mechanical Study of Effect of Single Attractive Ions on Electron Transport in Nanoscale Transistors SDM2008-179 |
Yoshinari Kamakura, Gennady Mil'nikov, Nobuya Mori (Osaka Univ.), Tatsuya Ezaki (Hiroshima Univ.) |
| (12) |
15:25-15:50 |
Three-dimensional NEGF simulation of gate tunnel current in ultra-small MOSFETs SDM2008-180 |
Hideki Minari, Daisuke Nishitani, Nobuya Mori (Osaka Univ.) |
| (13) |
15:50-16:15 |
High-field Transport in Silicon Analyzed by Flux Equation SDM2008-181 |
Naohito Morozumi, Kenji Natori (Univ. of Tsukuba) |
| (14) |
16:15-16:40 |
Three-Dimensional Quantum Transport Simulation of Si-Nanowire Transistors SDM2008-182 |
Yoshihiro Yamada, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) |
| (15) |
16:40-17:05 |
First-Principles Simulation of Electronic Bandstructures on Nanoscaled-Si Channels with Strain Effects SDM2008-183 |
Tadashi Maegawa, Tsuneki Yamauchi, Takeshi Hara, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Shigeru KAWANAKA (Toshiba)
TEL 045-776-5670, FAX 045-776-4104
E-  ge       ba |
Last modified: 2008-09-25 19:44:14
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