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| Chair |
|
Yasuo Nara |
| Vice Chair |
|
Yuzou Oono (Univ. of Tsukuba) |
| Secretary |
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Yoshitaka Sasago (Hitachi) |
| Assistant |
|
Rihito Kuroda (Tohoku Univ.) |
|
Wed, Jan 29 AM
09:30 - 11:40 |
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09:30-09:35 |
Opening Address / Kunihiro Sakamoto (AIST) ( 5 min. ) |
| (1) |
09:35-10:00 |
[Invited Talk]
Carrier response in band gap and multiband transport in bilayer grapheme under the ultra-high displacement |
Kosuke Nagashio, K Kanayama, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) |
| (2) |
10:00-10:25 |
[Invited Talk]
Reconsideration of Electron Mobility in Ge n-MOSFETs from Ge Substrate Side |
ChoongHyun Lee, Tomonori Nishimura, T Tabata, Cimang Lu, W F Zhang, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) |
| (3) |
10:25-10:50 |
[Invited Talk]
High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Regrowth |
Toshifumi Irisawa, Minoru Oda, Keiji Ikeda, Yoshihiko Moriyama, Eiko Mieda, Wipakorn. Jevasuwan, Tatsuro Maeda (AIST), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Yasuyuki Miyamoto (Tokyo Inst. of Tech.), Tsutomu Tezuka (AIST) |
| (4) |
10:50-11:15 |
[Invited Talk]
Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs |
Wataru Mizubayashi (AIST), Hiroshi Onoda, Yoshiki Nakashima (Nissin Ion Equipment), Yuki Ishikawa, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi Ouchi, Junichi Tsukada, Hiromi Yamauchi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara (AIST) |
| (5) |
11:15-11:40 |
[Invited Talk]
Integration of III-V Nanowires on Si : From High-Performance Vertical FET to Steep-Slope Switch |
Katsuhiro Tomioka (Hokkaido Univ./JST-PRESTO), Takashi Fukui (Hokkaido Univ.) |
| |
11:40-12:40 |
Lunch Break ( 60 min. ) |
Wed, Jan 29 PM
12:40 - 17:00 |
| (6) |
12:40-13:05 |
|
| (7) |
13:05-13:30 |
[Invited Talk]
Future Prospects of MRAM Technologies |
Shinji Yuasa, Akio Fukushima, Kay Yakushiji, Takayuki Nozaki, Makoto Konoto, Hiroki Maehara, Hitoshi Kubota, Tomohiro Taniguchi, Hiroko Arai, Hiroshi Imamura, Koji Ando (AIST), Yoichi Shiota, Frederic Bonnel, Yoshishige Suzuki (Osaka Univ.), Naoharu Shimomura (Toshiba) |
| (8) |
13:30-13:55 |
[Invited Talk]
Variable Nonvolatile Memory Arrays for Adaptive Computing Systems |
Hiroki Noguchi, Susumu Takeda, Kumiko Nomura, Keiko Abe, Kazutaka Ikegami, Eiji Kitagawa, Naoharu Shimomura, Junichi Ito, Shinobu Fujita (Toshiba) |
| (9) |
13:55-14:20 |
[Invited Talk]
Analysis of Transistor Characteristics in Distribution Tails beyond ±5.4σ of 11 Billion Transistors |
Tomoko Mizutani, Anil Kumar, Toshiro Hiramoto (Univ. of Tokyo) |
| |
14:20-14:40 |
Break ( 20 min. ) |
| (10) |
14:40-15:05 |
[Invited Talk]
Suppression of Die-to-Die Delay Variability of Silicon on Thin Buried Oxide (SOTB) CMOS Circuits by Balanced P/N Drivability Control with Back-Bias for Ultralow-Voltage (0.4 V) Operation |
Hideki Makiyama, Yoshiki Yamamoto, Hirofumi Shinohara, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii (LEAP), Koichiro Ishibashi (Univ. of Electro- Comm.), Tomoko Mizutani, Toshiro Hiramoto (Univ. of Tokyo), Yasuo Yamaguchi (LEAP) |
| (11) |
15:05-15:30 |
[Invited Talk]
High Performance Sub-20-nm-Channel-Length Extremely-Thin Body InAs-on-Insulator Tri-Gate MOSFETs with High Short Channel Effect Immunity and Vth Tunability |
S. H. Kim, Masafumi Yokoyama, Ryosho Nakane (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) |
| (12) |
15:30-15:55 |
[Invited Talk]
3D Integrated CMOS Device by Using Wafer Stacking and Via-last TSV |
Mayu Aoki, Futoshi Furuta, Kazuyuki Hozawa, Yuko Hanaoka, Kenichi Takeda (Hitachi) |
| (13) |
15:55-16:20 |
[Invited Talk]
Three-dimensional Structures for High Saturation Signals and Crosstalk Suppression in 1.20 μm Pixel Back-Illuminated CMOS Image Sensor |
Takekazu Shinohara, Kazufumi Watanabe (Sony Semiconductor), Kazunobu Ohta (Sony), Hajime Nakayama (Sony Semiconductor), Takafumi Morikawa (Sony), Keiichi Ohno, Dai Sugimoto (Sony Semiconductor), Shingo Kadomura, Teruo Hirayama (Sony) |
| (14) |
16:20-17:00 |
Discussions |
| Announcement for Speakers |
| Invited Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Yukinori Ono(NTT)
Tel 046-240-2641 Fax 046-240-4317
E- : o         |
Last modified: 2014-01-06 17:33:06
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