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=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Tanemasa Asano (Kyushu Univ.) Vice Chair: Toshihiro Sugii (Fujitsu) Secretary: Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony) Assistant: Syunichiro Ohmi (Tokyo Inst. of Tech.) =============================================== Technical Committee on Reliability (R) Chair: Shigeru Yanagi (National Defense Academy) Vice Chair: Kazuaki Wakai (NHK) Secretary: Tetsushi Yuge (National Defense Academy), Mitsuhiro Kimura (Hosei Univ.) Assistant: Naoto Kaio (Hiroshima Shudo Univ.), Hisoyasu Mawatari (NTT) =============================================== Technical Committee on Electron Device (ED) Chair: Masaaki Kuzuhara (Univ. of Fukui) Vice Chair: Tamotsu Hashidume (Hokkaido Univ.) Secretary: Shin-ichiro Takatani (Hitachi), Manabu Arai (New JRC) Assistant: Naoki Hara (Fujitsu Labs.), Koichi Murata (NTT) DATE: Fri, Nov 16, 2007 13:00 - 16:35 PLACE: Chuo-Denki-Kurabu(2-1-25, Doujimahama, Kita-ku, Osaka-shi, Japan. 12 minutes walk from JR Osaka station, or 6 minutes walk from JR Kita-sinti station. http://www.chuodenki-club.or.jp/map/annai.html. 06-6345-6351) TOPICS: ---------------------------------------- Fri, Nov 16 PM (13:00 - 16:35) ---------------------------------------- (1) 13:00 - 13:25 Electrical Characterization of Yttriumaluminate(YAlO)Film Keiko Matsunouchi, Naoyoshi Komatsu, Chiharu Kimura, Hidemitsu Aoki, Takashi Sugino (Osaka Univ.) (2) 13:25 - 13:50 Galvanic Corrosion Suppression of High-k/Metal Gates Daisuke Watanabe, Hidemitsu Aoki, Saori Hotta, Chiharu Kimura, Takashi Sugino (Osaka Univ) (3) 13:50 - 14:15 Oxidation of SiC and GaN Surface in High Pressure and High Temperature Water Takashi Futatsuki, Taro Oe (Organo Corp.), Hidemitsu Aoki, Naoyoshi Komatsu, Chiharu Kimura, Takashi Sugino (Osaka Univ.) (4) 14:15 - 14:40 High Stability of Drain Current at High Temperatures in Multi-Mesa-Channel AlGaN/GaN HEMT Takahiro Tamura, Junji Kotani, Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ----- Break ( 15 min. ) ----- (5) 14:55 - 15:20 Reliability Study of AlGaN/GaN HEMTs Device Keiichi Matsushita, Shinichiro Teramoto, Hiroyuki Sakurai, Jeoungchill Shim, Hisao Kawasaki, Kazutaka Takagi, Yoshiharu Takada, Kunio Tsuda (Toshiba) (6) 15:20 - 15:45 Degradation-Mode Analysis for Highly Reliable GaN-HEMT Yusuke Inoue, Satoshi Masuda, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Hisao Shigematsu, Kazukiyo Joshin (Fujitsu Labs. Ltd.) (7) 15:45 - 16:10 Leakage Current Screening for AlGaN/GaN HEMT Mass-Production Fumikazu Yamaki, Kazuaki Ishii, Masahiro Nishi, Hitoshi Haematsu, Yasunori Tateno, Haruo Kawata (EUD) (8) 16:10 - 16:35 A New TDDB Degradation Model Based on Cu Ion Drift in Cu Interconnect Dielectrics Naohito Suzumura, Shigehisa Yamamoto, , , Junko Komori, (Renesas Technology Corp.) # Information for speakers General Talk (25) will have 20 minutes for presentation and 5 minutes for discussion. === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Fri, Dec 14, 2007: Nara Institute Science and Technology [Fri, Oct 12], Topics: Silicon related material, process and device Thu, Jan 24, 2008: Kikai-Shinko-Kaikan Bldg [unfixed], Topics: IEDM special review (Advanced CMOS device and process) Wed, Jan 30, 2008 - Thu, Jan 31, 2008: [Fri, Nov 9] Fri, Feb 8, 2008: Kikai-Shinko-Kaikan Bldg. [unfixed] # SECRETARY: Yasushiro Nishioka (Nihon University, College of Science and Technology) TEL047-469-6482,FAX047-467-9504 E-mail:     e   t n-u ,a  cmsk  === Technical Committee on Reliability (R) === # FUTURE SCHEDULE: Fri, Dec 14, 2007: [Fri, Oct 19] Fri, Feb 15, 2008: [Mon, Dec 10] # SECRETARY: Tetsushi Yuge (National Defense Academy) TEL +81-46-841-3810 FAX +81-46-844-5903 E-mail: gen === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Tue, Nov 27, 2007 - Wed, Nov 28, 2007: Tohoku Univ. Research Institute of Electrical Communication [Thu, Sep 20] Wed, Jan 16, 2008 - Fri, Jan 18, 2008: Kikai-Shinko-Kaikan Bldg. [Fri, Nov 9], Topics: Compound Semiconductor IC, High-speed and high-frequency devices Wed, Jan 30, 2008 - Thu, Jan 31, 2008: [Fri, Nov 9] # SECRETARY: Manabu Arai（New JRC） TEL: 049-278-1477、FAX: 049-278-1419 E-mail:   injr Shinichiro Takatani（Hitachi） TEL: 049-278-1477、FAX: 049-278-1419 E-mail:     er  Koichi Murata（NTT) TEL：046-240-2871、FAX：046-270-2872 E-mail：  aecl Hara Naoki （Fujitsu Lab.） TEL : 046-250-8242、FAX : 046-250-4337 E-mail :   nf    Last modified: 2007-09-25 11:35:28 |
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