|
|
| Chair |
|
Shigeru Yanagi (National Defense Academy) |
| Vice Chair |
|
Kazuaki Wakai (NHK) |
| Secretary |
|
Tetsushi Yuge (National Defense Academy), Mitsuhiro Kimura (Hosei Univ.) |
| Assistant |
|
Naoto Kaio (Hiroshima Shudo Univ.), Hisoyasu Mawatari (NTT) |
|
|
|
| Chair |
|
Masaaki Kuzuhara (Univ. of Fukui) |
| Vice Chair |
|
Tamotsu Hashidume (Hokkaido Univ.) |
| Secretary |
|
Shin-ichiro Takatani (Hitachi), Manabu Arai (New JRC) |
| Assistant |
|
Naoki Hara (Fujitsu Labs.), Koichi Murata (NTT) |
|
|
|
| Chair |
|
Tanemasa Asano (Kyushu Univ.) |
| Vice Chair |
|
Toshihiro Sugii (Fujitsu) |
| Secretary |
|
Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony) |
| Assistant |
|
Syunichiro Ohmi (Tokyo Inst. of Tech.) |
|
| Conference Date |
Fri, Nov 16, 2007 13:00 - 16:35 |
| Topics |
|
| Conference Place |
Chuo-Denki-Kurabu |
| Address |
2-1-25, Doujimahama, Kita-ku, Osaka-shi, Japan |
| Transportation Guide |
12 minutes walk from JR Osaka station, or 6 minutes walk from JR Kita-sinti station
http://www.chuodenki-club.or.jp/map/annai.html |
Contact
Person |
06-6345-6351 |
Fri, Nov 16 PM
13:00 - 16:35 |
| (1) |
13:00-13:25 |
Electrical Characterization of Yttriumaluminate(YAlO)Film |
Keiko Matsunouchi, Naoyoshi Komatsu, Chiharu Kimura, Hidemitsu Aoki, Takashi Sugino (Osaka Univ.) |
| (2) |
13:25-13:50 |
Galvanic Corrosion Suppression of High-k/Metal Gates |
Daisuke Watanabe, Hidemitsu Aoki, Saori Hotta, Chiharu Kimura, Takashi Sugino (Osaka Univ) |
| (3) |
13:50-14:15 |
Oxidation of SiC and GaN Surface in High Pressure and High Temperature Water |
Takashi Futatsuki, Taro Oe (Organo Corp.), Hidemitsu Aoki, Naoyoshi Komatsu, Chiharu Kimura, Takashi Sugino (Osaka Univ.) |
| (4) |
14:15-14:40 |
High Stability of Drain Current at High Temperatures in Multi-Mesa-Channel AlGaN/GaN HEMT |
Takahiro Tamura, Junji Kotani, Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) |
| |
14:40-14:55 |
Break ( 15 min. ) |
| (5) |
14:55-15:20 |
Reliability Study of AlGaN/GaN HEMTs Device |
Keiichi Matsushita, Shinichiro Teramoto, Hiroyuki Sakurai, Jeoungchill Shim, Hisao Kawasaki, Kazutaka Takagi, Yoshiharu Takada, Kunio Tsuda (Toshiba) |
| (6) |
15:20-15:45 |
Degradation-Mode Analysis for Highly Reliable GaN-HEMT |
Yusuke Inoue, Satoshi Masuda, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Hisao Shigematsu, Kazukiyo Joshin (Fujitsu Labs. Ltd.) |
| (7) |
15:45-16:10 |
Leakage Current Screening for AlGaN/GaN HEMT Mass-Production |
Fumikazu Yamaki, Kazuaki Ishii, Masahiro Nishi, Hitoshi Haematsu, Yasunori Tateno, Haruo Kawata (EUD) |
| (8) |
16:10-16:35 |
A New TDDB Degradation Model Based on Cu Ion Drift in Cu Interconnect Dielectrics |
Naohito Suzumura, Shigehisa Yamamoto, , , Junko Komori, (Renesas Technology Corp.) |
| Announcement for Speakers |
| General Talk (25) | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| R |
Technical Committee on Reliability (R) [Latest Schedule]
|
| Contact Address |
Tetsushi Yuge (National Defense Academy)
TEL +81-46-841-3810
FAX +81-46-844-5903
E- :  ge n  |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Manabu Arai（New JRC）
TEL: 049-278-1477、FAX: 049-278-1419
E-:   injr
Shinichiro Takatani（Hitachi）
TEL: 049-278-1477、FAX: 049-278-1419
E-:        er 
Koichi Murata（NTT)
TEL：046-240-2871、FAX：046-270-2872
E-：  aecl
Hara Naoki （Fujitsu Lab.）
TEL : 046-250-8242、FAX : 046-250-4337
E- :   nf    |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Yasushiro Nishioka (Nihon University, College of Science and Technology)
TEL047-469-6482,FAX047-467-9504
E-: e  t n-u,a  cmsk |
Last modified: 2007-09-25 11:35:28
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