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=============================================== Technical Committee on Reliability (R) Chair: Shuichi Fukuda Vice Chair: Shigeru Yanagi Secretary: Kazuaki Wakai, Tetsushi Yuge Assistant: Yoshiyuki Ihara, Yoshino Fukai =============================================== Technical Committee on Electron Device (ED) Chair: Takao Waho Vice Chair: Masaaki Kuzuhara Secretary: Tsuyoshi Tanaka, Manabu Arai Assistant: Shin-ichiro Takatani, Koichi Murata =============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Tanemasa Asano Vice Chair: Toshihiro Sugii Secretary: Morifumi Ohno, Shigeru Kawanaka Assistant: Yuichi Matsui DATE: Fri, Nov 24, 2006 13:00 - 16:55 PLACE: (06-6345-6351) TOPICS: ---------------------------------------- Fri, Nov 24 PM (13:00 - 16:55) ---------------------------------------- (1) 13:00 - 13:45 [Invited Talk] Fault diagnosis technology based on transistor behavor analysis Masaru Sanada (KUT) (2) 13:45 - 14:10 * Shunsuke Kunimatsu, Akifumi Imai (Kyoto Univ.), Kensuke Akiyama (Kanagawa Industrial Technology Center), Yoshihito Maeda (Kyoto Univ.) (3) 14:10 - 14:35 Takafumi Jonishi, Yuichiro Ando, Yoshihito Maeda (Kyoto Univ.) (4) 14:35 - 15:00 Hot-carrier reliability in Trench Lateral Power MOSFETs Mutsumi Sawada, Shinichiro Matsunaga (Fuji Electric AT), Masaharu Yamaji, Akio Kitamura (Fuji Electric DT), Naoto Fujishima (Fuji Electric AT) ----- Break ( 15 min. ) ----- (5) 15:15 - 15:40 Effects of heterointerface flatness on device performance of InP-based HEMT -- Reduction of interface roughness scattering using (411)A-oriented substrate -- Issei Watanabe (NICT), Keisuke Shinohara (Rockwell), Takahiro Kitada (Univ.of Tokushima), Satoshi Shimomura (Ehimeiv.), Akira Endoh, Yoshimi Yamashita, Takashi Mimura (Fujitsu Labs.), Satoshi Hiyamizu (Osaka Univ./Nara National College of Tech.), Toshiaki Matsui (NICT) (6) 15:40 - 16:05 Surface passivation film dependence of 1/f noise characteristic in AlGaN/GaN HEMT Takanori Matsushima, Masahiro Nakajima, Kazuki Nomoto, Masataka Satoh, Tohru Nakamura (Hosei Univ.) (7) 16:05 - 16:30 Seiya Kasai, Alberto F. Basile, Tamotsu Hashizume (Hokkaido Univ.) (8) 16:30 - 16:55 Surface Passivation of AlGaN/GaN HFETs by a Sputtered AlN Thin Film Hiroaki Ueno, Tomohiro Murata, Hidetoshi Ishida, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Kaoru Inoue (Panasonic) === Technical Committee on Reliability (R) === # FUTURE SCHEDULE: Fri, Dec 15, 2006: Kikai-Shinko-Kaikan Bldg. [Fri, Oct 20], Topics: International standards on reliability, safety, reliability, etc. Fri, Feb 16, 2007: [Fri, Dec 15] # SECRETARY: Kazuaki Wakai(NHK) TEL0480-85-1118,FAX0480-85-1508 E-mail:   i k-dm   === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Fri, Dec 8, 2006: Kikai-Shinko-Kaikan Bldg. [Fri, Sep 15] Wed, Jan 17, 2007 - Fri, Jan 19, 2007: Kikai-Shinko-Kaikan Bldg. [Fri, Nov 10] Thu, Feb 1, 2007 - Fri, Feb 2, 2007: [Fri, Nov 10] # SECRETARY: Tsuyoshi Tanaka（Matsushita） TEL: 075-956-9083, FAX: 075-956-9110 E-mail:   erl ci Manabu Arai（New JRC） TEL: 049-278-1477、FAX: 049-278-1419 E-mail:   injrShinichiro Takatani（Hitachi） TEL: 049-278-1477、FAX: 049-278-1419 E-mail: injrKoichi Murata（NTT) TEL：046-240-2871、FAX：046-270-2872 E-mail：  aecl === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Thu, Feb 1, 2007 - Fri, Feb 2, 2007: [Fri, Nov 10] # SECRETARY: Yasushiro Nishioka (Nihon University, College of Science and Technology) TEL047-469-6482,FAX047-467-9504 E-mail:    e t n-u ,a  cmsk  Last modified: 2006-09-26 11:48:38 |
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