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=============================================== Technical Committee on Electron Device (ED) Chair: Naoki Hara (Fujitsu Labs.) Vice Chair: Koichi Maezawa (Univ. of Toyama) Secretary: Tetsuzo Ueda (Panasonic), Seiya Kasai (Hokkaido Univ.) Assistant: Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST) =============================================== Technical Committee on Component Parts and Materials (CPM) Chair: Yasushi Takano (Shizuoka Univ.) Vice Chair: Satoru Noge (Numazu National College of Tech.) Secretary: Koji Enbutsu (NTT), Tomomasa Sato (Kanagawa Univ.) Assistant: Junichi Kodate (NTT), Nobuyuki Iwata (Nihon Univ.) =============================================== Technical Committee on Lasers and Quantum Electronics (LQE) Chair: Shinji Matsuo (NTT) Vice Chair: Masahiko Kondo (Osaka Univ.) Secretary: Yu Tanaka (Fujitsu Labs.), Hiroshi Aruga (Mitsubishi Electric) DATE: Thu, Nov 28, 2013 10:30 - 17:30 Fri, Nov 29, 2013 09:30 - 17:10 PLACE: (http://www.osaka-u.ac.jp/ja/access/accessmap.html. Prof. Masahiko KONDOW. +81-6-6879-7765) TOPICS: Ｎｉｔｒide and Compound Semiconductor Devices ---------------------------------------- Thu, Nov 28 AM (10:30 - 17:30) ---------------------------------------- ----- Opening Address ( 5 min. ) ----- (1) 10:35 - 11:00 High-Power Operation and Applications of InGaN Laser Diode Hiroyuki Hagino, Katsuya Samonji, Shinji Yoshida, Shinichi Takigawa, Kiyoshi Morimoto, Toshiyuki Takizawa, Hideki Kasugai, Kazuhiko Yamanaka, Takuma Katayama (Panasonic) (2) 11:00 - 11:25 Texture formation by anisotropic dry etching of m-plane GaN, and light extraction efficiency improvement of textured m-plane GaN LED Toshiyuki Fujita, Atsushi Yamada, Akira Inoue, Ryo Kato, Toshiya Yokokawa (Panasonic) (3) 11:25 - 11:50 Study on improvement of the light extraction efficiency in 350-nm-emission UV-LED Tsubasa Nakashima, Kenichiro Takeda, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) (4) 11:50 - 12:15 Bow management of substrate for nitride semiconductor devices by internally focused laser processing -- application to silicon substrate -- Natsuko Aota, Hideo Aida, Hidetoshi Takeda (Namiki Precision Jewel) ----- Lunch Break ( 75 min. ) ----- (5) 13:30 - 13:55 Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding Shota Nishida, Jianbo Liang, Masashi Morimoto, Naoteru Shigekawa (Osaka City Univ.), Manabu Arai (New Japan Radio) (6) 13:55 - 14:20 Fabrication of Tandem Solar Cells by Using Surface-Activated Bonding Jianbo Liang (Osaka City Univ.), Shota Nishida, Masashi Morimoto, Naoteru Shigekawa (Osaka City University) (7) 14:20 - 14:45 Investigation on the optimum MQW structure for InGaN/GaN solar cells Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) (8) 14:45 - 15:10 Characterization of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates Kenji Shiojima, Yuhei Kihara, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal) (9) 15:10 - 15:35 AC Operation of Low-Mg-Doped p-GaN Schottky Diodes Kenji Shiojima, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal) ----- Break ( 15 min. ) ----- (10) 15:50 - 16:15 Quantum Efficiency of p-GaN with NEA surface for high brightness electron source Takuya Maekawa, Yoshio Honda, Hiroshi Amano, Tomohiro Nishitani (Nagoya Univ.) (11) 16:15 - 16:40 Study on C doping in GaN and AlGaN by MOVPE Yuya Wakasugi, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) (12) 16:40 - 17:05 A novel method for crystallizations of aluminum nitride PeiTsen Wu, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) (13) 17:05 - 17:30 Fabrication of the multi-junction GaInN based solar cells using tunnel junction Hironori Kurokawa, Tomomi Goda, Mitsuru Kaga, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ---------------------------------------- Fri, Nov 29 AM (09:30 - 17:10) ---------------------------------------- (14) 09:30 - 09:55 OMVPE growth and red luminescence properties of Eu doped GaN/AlGaN multiple quantum well structures Takanori Arai, Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) (15) 09:55 - 10:20 Deep-level transient spectroscopy study on defect levels in Eu,Si-codoped GaN grown by organometallic vapor phase epitaxy Souichirou Kuwata, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) (16) 10:20 - 10:45 Growth of thick InGaN epilayer by high-pressure MOVPE Kouhei Yamashita, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) ----- Break ( 15 min. ) ----- (17) 11:00 - 11:25 Growth of GaN with thin 3C-SiC buffer layer on Si(111) substrate Masayoshi Katagiri, Kenta Izumi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hidehiko Oku, Hidetoshi Asamura, Keisuke Kawamura (Air Water R&D) (18) 11:25 - 11:50 Annealing in N2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE Gou Nishio, Shuhei Suzuki, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.) (19) 11:50 - 12:15 Control of nucleation for AlN growth on 6H-SiC substrate by low-pressure HVPE Shin Kitagawa, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) ----- Lunch Break ( 75 min. ) ----- (20) 13:30 - 13:55 Development of Highly-Uniform 270-nm Deep-Ultraviolet Light-Emitting Diodes Takuya Mino (Riken/Panasonic), Hideki Hirayama (Riken), Norimichi Noguchi, Takayoshi Takano, Kenji Tsubaki (Riken/Panasonic) (21) 13:55 - 14:20 Realization of high-efficiency deep-UV LED by using transparent p-AlGaN contact layer Noritoshi Maeda, Hideki Hirayama (RIKEN) (22) 14:20 - 14:45 Development of AlGaN DUV-LEDs Masamichi Ippommatsu, Akira Hirano (UVCR), Hiroshi Amano (Nagoya Univ.), Isamu Akasaki (Meijyo Univ.) (23) 14:45 - 15:10 Growth of Connected Pillar AlN Buffer for AlGaN deep-UV LEDs Shiro Toyoda (Saitama Univ./RIKEN), Hideki Hirayama (RIKEN), Norihiko Kamata (Saitama Univ.) ----- Break ( 15 min. ) ----- (24) 15:25 - 15:50 Effects of Fabrication Process on Electrical Properties of InAlN MOS structures with ALD-Al2O3 Masahito Chiba, Takuma Nakano, Masamichi Akazawa (Hokkaido Univ.) (25) 15:50 - 16:15 Interface properties of n-GaN MIS diodes with laminated ZrO2/Al2O3 films as a gate insulator Shintaro Kodama, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) (26) 16:15 - 16:40 Photoelectrode properties of GaN porous structures formed by photo-assisted electrochemical process Yusuke Kumazaki, Akio Watanabe, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) (27) 16:40 - 17:05 Evaluation of unwanted radiated emission from GaN-HEMT switching circuit Toshihide Ide, Ryousaku Kaji, Mitsuaki Shimizu (AIST), Kenji Mizutani, Hiroaki Ueno, Nobuyuki Otsuka, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ----- Closing Address ( 5 min. ) ----- # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Mon, Dec 16, 2013 - Tue, Dec 17, 2013: Research Institute of Electrical Communication Tohoku University [unfixed], Topics: Millimeter wave, terahertz wave devices and systems Thu, Jan 16, 2014 - Fri, Jan 17, 2014<br> (changed): Kikai-Shinko-Kaikan Bldg. [Fri, Nov 8], Topics: Power devices, High-speed and high-frequency devices, Microwave Technologies, etc. Thu, Feb 27, 2014 - Fri, Feb 28, 2014: Hokkaido Univ. Centennial Hall [Wed, Dec 11], Topics: Functional nanodevices and related technologies # SECRETARY: Tetsuzo Ueda（Panasonic) TEL：+81-6-6906-4940、FAX：+81-6-6906-2426 E-mail：      zo  pa   c Seiya Kasai (Hokkaido Univ.) TEL : 011-706-6509 Fax : 011-716-6004 E-mail :   irciqe  i === Technical Committee on Component Parts and Materials (CPM) === # FUTURE SCHEDULE: Thu, Feb 27, 2014: Kikai-Shinko-Kaikan Bldg. [Sun, Dec 8] # SECRETARY: Tomomasa Sato (Kanagawa Univ.) TEL +81-45-481-5661, FAX +81-45-491-7915 E-mail:  ut02  -u=== Technical Committee on Lasers and Quantum Electronics (LQE) === # FUTURE SCHEDULE: Fri, Dec 13, 2013: [Mon, Oct 14] Thu, Jan 23, 2014 - Fri, Jan 24, 2014: Doshisha University [Fri, Nov 1] # SECRETARY: Yu Tanaka (Fujitsu Laboratories) TEL +81-46-250-8251, FAX +81-46-250-8146 E-mail:  _   Hiroshi Aruga (Mitsubishi Electric) TEL +81-467-41-2906，FAX +81-467-41-2519 E-mail: A  Hi  abMibiElect c # ANNOUNCEMENT: # Homepage of LQE is http://www.ieice.org/~lqe/jpn/ Last modified: 2013-09-20 23:28:30 |
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