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Technical Committee on Silicon Device and Materials (SDM)
Chair: Yuzou Oono (Univ. of Tsukuba) Vice Chair: Tatsuya Kunikiyo (Renesas)
Secretary: Rihito Kuroda (Tohoku Univ.)

DATE:
Thu, Jun 19, 2014 09:30 - 17:35

PLACE:
VBL, Nagoya Univ.(Furo-cho, Chikusa-ku, Nagoya 464-8003, Japan. http://www.vbl.nagoya-u.ac.jp/e/index.html. Prof. Seiichi Miyazaki. +81-52-789-3588)

TOPICS:
Material Science and Process Technology for MOS Devices and Memories

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Thu, Jun 19 AM (09:30 - 17:35)
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(1) 09:30 - 09:50
Process Design of High-k/Ge Gate Stack for Improving Thermal Stability and Interface Properties in Sub-1-nm Regime
Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)

(2) 09:50 - 10:10
Investigation of Al-PMA Effect on Al2O3/GeOx/Ge Gate Stack
Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ.)

(3) 10:10 - 10:30
Alleviation of Fermi level pinning of Sn/Ge contact
Akihiro Suzuki, Shunsuke Asaba, Jun Yokoi, Masashi Kurosawa, Kimihiko Kato, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)

(4) 10:30 - 10:50
Stability of vacancy defect around metal/Ge interfaces; first-principles study
Shogo Sasaki, Takashi Nakayama (Chiba Univ.)

----- Break ( 15 min. ) -----

(5) 11:05 - 11:25
Control of Stacking Fault Structures in Ge1-xSnx Epitaxial Growth
Takanori Asano (Nagoya Univ.), Noriyuki Taoka (IHP Microelectronics), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)

(6) 11:25 - 11:45
Efficient Activation of As+ Ion implantation into Ge substrate for Formation of Low-Resistive Shallow Junction
Shinya Hamada, Hideki Murakami, Takahiro Ono, Kuniaki Hashimoto (Hiroshima Univ.), Akio Ohta (Nagoya Univ.), Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.)

(7) 11:45 - 12:05
Characteristics of charge trap flash memory with Al2O3/(Ta/Nb)Ox/Al2O3 multi-layer by ALD method
Toshihide Nabatame, Akihiko Ohi (NIMS), Kazuhiro Ito, Makoto Takahashi (Osaka Univ.), Toyohiro Chikyow (NIMS)

(8) 12:05 - 12:25
Study on Resistance-Switching of Si-rich Oxide Films embedding Mn Nanodots
Takashi Arai (Nagoya Univ.), Akio Ohta (Nagoya Univ. VBL), Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)

----- Lunch Break ( 60 min. ) -----

(9) 13:25 - 13:45
Low Temperature Fabrication Processes for p-Cu2O/SiOx/n-SiC structured pn memory diode
Atsushi Yamashita, Takahiro Tsukamoto, Yoshiyuki Suda (Tokyo Univ. of Agric. & Tech.)

(10) 13:45 - 14:05
Atomistic study of Nitrogen and Hydrogen incorporation effect in Si-rich SiO2
Hiroki Shirakawa, Keita Yamaguchi (Univ. of Tsukuba), Katsumasa Kamiya (KAIT), Kenji Shiraishi (Nagoya Univ.)

(11) 14:05 - 14:25
Theoretical Study of Electron Transportation in NanoScale Channel
Genki Fujita, Taro Shiokawa (Univ. of Tsukuba), Yukihiro Takada (Tokyo Univ of Science), Satoru Konabe (Univ. of Tsukuba), Masakazu Muraguchi (Tohoku Univ.), Takahiro Yamamoto (Tokyo Univ. of Science), Tetsuo Endoh (Tohoku Univ.), Yasuhiro Hatsugai (Univ. of Tsukuba), Kenji Shiraishi (Nagoya Univ.)

----- Break ( 15 min. ) -----

(12) 14:40 - 15:00
[Invited Lecture]
Electronic and opto-electronic devices using III-V nanowire/Si heterojunctions
Katsuhiro Tomioka (Hokkaido Univ./JST), Takashi Fukui (Hokkaido Univ.)

(13) 15:00 - 15:20
[Invited Lecture]
Ultra-sharp metal-to-insulator transition in a single crystal VO2 thin film by controlling the local stress of transition
Takeaki Yajima, Yuma Ninomiya, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo)

(14) 15:20 - 15:40
[Invited Lecture]
Local Characterization of Resistive Switching Properties of Si-rich Oxide Thin Films by Using Ni Nanodot Electrode
Akio Ohta, Chong Liu, Takashi Arai, Daichi Takeuchi, Hai Zhang, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)

(15) 15:40 - 16:00
[Invited Lecture]
Temperature Dependence of Resistance of Conductive Nano-filament in Resistance Change Memory
Shintaro Otsuka, Yoshifumi Hamada, Tomohiro Shimizu, Shoso Shingubara (Kansai Univ.)

----- Break ( 15 min. ) -----

(16) 16:15 - 16:35
[Invited Lecture]
Controlling a formation of conducting filaments in a resistive change memory by nano holes of a porous alumina and improvement of the switching characteristics
Kouichi Takase, Yusuke Tanimoto (Nihon Univ.), Shintaro Otsuka, Tomohiro Shimizu, Shoso Shingubara (Kansai Univ.)

(17) 16:35 - 16:55
[Invited Lecture]
Atomic switch-type resistive switching memory using oxide nanofilms and its applications
Tohru Tsuruoka, Tsuyoshi Hasegawa (NIMS)

(18) 16:55 - 17:15
[Invited Lecture]
Low temperature poly-crystallization of group-IV semiconductor films on insulators
-- use of low-melting-point Sn --
Masashi Kurosawa (Nagoya Univ./JSPS), Noriyuki Taoka (Nagoya Univ.), Hiroshi Ikenoue (Kyushu Univ.), Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)

(19) 17:15 - 17:35
[Invited Lecture]
Oxidation-ambience-dependent near-interface structure of thermally grown oxide on 4H-SiC
Hirohisa Hirai (Univ. of Tokyo), Koji Kita (Univ. of Tokyo/JST)

# CONFERENCE SPONSORS:
- This conference is co-sponsored by The Japan Society of Applied Physics.

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Mon, Aug 4, 2014 - Tue, Aug 5, 2014: Hokkaido Univ., Multimedia Education Bldg. [Mon, Jun 9]

# SECRETARY:
Rihito Kuroda
Tohoku Univ.
TEL： 022-795-4833
FAX： 022-795-4834
email: