===============================================
Technical Committee on Silicon Device and Materials (SDM)
Chair: Takahiro Shinada (Tohoku Univ.) Vice Chair: Hiroshige Hirano (TowerJazz Panasonic)
Secretary: Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY)
Assistant: Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.)
DATE:
Thu, Nov 7, 2019 09:55 - 16:45
Fri, Nov 8, 2019 09:30 - 16:40
PLACE:
The Kikai Shinko Kaikan building(3-5-8, Shibakoen, Minato-ku, Tokyo 105-0011, Japan. 6-minute walk from Kamiyacho Station, Tokyo Metro Hibiya Line or 15-minute walk from Hamamatsucho Station, JR line)
TOPICS:
Process, Device, Circuit simulation, etc.
----------------------------------------
Thu, Nov 7 AM (09:55 - 12:00)
Chair: T. Noda
----------------------------------------
----- Opening Address ( 5 min. ) -----
(1) 10:00 - 11:00
[Invited Talk]
2019 SISPAD Review
Yoshinari Kamakura (OIT)
(2) 11:00 - 12:00
[Invited Talk]
Study on the scalability of ferroelectric HfO2 tunnel junction memory
Masaharu Kobayashi, Fei Mo, Yusaku Tagawa, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo)
----- Lunch Break ( 70 min. ) -----
----------------------------------------
Thu, Nov 7 PM (13:10 - 15:10)
Chair: H. Takashino
----------------------------------------
(3) 13:10 - 14:10
[Invited Talk]
Understanding the interface in 2D layered transistors
Kosuke Nagashio (UTokyo)
(4) 14:10 - 15:10
[Invited Talk]
Surface Reaction Analyses for Atomic Scale Processing by Beam Experiments
Kazuhiro Karahashi, Tomoko Ito, Satoshi Hamaguchi (Osaka Univ.)
----- Break ( 10 min. ) -----
----------------------------------------
Thu, Nov 7 PM (15:20 - 16:45)
Chair: S. Souma
----------------------------------------
(5) 15:20 - 16:20
[Invited Talk]
Compact Modeling Perspective
-- Bridge to Industrial Applications --
Mitiko Miura-Mattausch (HU)
(6) 16:20 - 16:45
Study of stacked type logic circuit with fabrication technology of 3D flash memory.
-- Design of full adder and low power. --
Fumiya Suzuki, Shigeyoshi Watanabe (Shonan Inst. of Tech.)
----------------------------------------
Fri, Nov 8 AM (09:30 - 12:30)
Chair: A. Hiroki
----------------------------------------
(7) 09:30 - 10:30
[Invited Talk]
Device Simulation of Dynamic Behavior of Ferroelectric Field-Effect Transistors
Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST)
(8) 10:30 - 11:30
[Invited Talk]
Fundamental Aspects of Semiconductor Device Modeling Associated with Discrete Impurities II
-- Random Dopants under Semiconductor Nano-structures --
Nobuyuki Sano (Univ. Tsukuba)
(9) 11:30 - 12:30
[Invited Talk]
First-principles molecular dynamics simulations for SiC oxidation processes
Takahisa Ohno (NIMS)
----- Lunch Break ( 60 min. ) -----
----------------------------------------
Fri, Nov 8 PM (13:30 - 15:30)
Chair: H. Ansai
----------------------------------------
(10) 13:30 - 14:30
[Invited Talk]
Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs
Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima (Tokyo Tech.), Katsumi Satoh (Mitsubishi Electric Corp.), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The University of Tokyo), Iriya Muneta, Hitoshi Wakabayashi (Tokyo Tech.), Akira Nakajima (AIST), Shin-ichi Nishizawa (Kyushu University, Kasuga), Kazuo Tsutsui (Tokyo Tech.), Toshiro Hiramoto (The University of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech.)
(11) 14:30 - 15:30
[Invited Talk]
Investigation of TCAD Calibration Methods for Saturation and Tail Current of 6.5kV IGBTs
Takeshi Suwa, Shigeaki Hayase (TDSC)
----- Break ( 10 min. ) -----
----------------------------------------
Fri, Nov 8 PM (15:40 - 16:40)
Chair: T. Kunikiyo
----------------------------------------
(12) 15:40 - 16:40
[Invited Talk]
Measurement and Analysis Technologies of RTS Noise Toward Advanced CMOS Image Sensors Development
Rihito Kuroda (Tohoku Univ.)
# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.
Invited Talk will have 50 minutes for presentation and 10 minutes for discussion.
# CONFERENCE SPONSORS:
- This conference is co-sponsored by The Japan Society of Applied Physics.
=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:
Tue, Dec 24, 2019: NAIST [Sun, Oct 27], Topics: Semiconductor Material Process and Device Meeting
Tue, Jan 28, 2020: Kikai-Shinko-Kaikan Bldg. [unfixed]
Fri, Feb 7, 2020: Tokyo University-Hongo [Fri, Dec 20]
# SECRETARY:
Taiji Noda (Panasonic Corp.）
TEL +81-80-8442-6837
E-mail：noda.taiji[atmark]jp.panasonic.com
Yoshinari Kamakura (Osaka Institute of Technology)
TEL +81-72-866-5381
E-mail：yoshinari.kamakura[atmark]oit.ac.jp
Last modified: 2019-10-31 19:29:48
|
Notification: Mail addresses are partially hidden against SPAM.
|