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Technical Committee on Electron Device (ED)
Chair: Tamotsu Hashidume (Hokkaido Univ.) Vice Chair: Toru Kaji (Toyota Central R&D Labs.)
Secretary: Koichi Murata (NTT), Naoki Hara (Fujitsu Labs.)
Assistant: Kunio Tsuda (Toshiba), Michihiko Suhara (Tokyo Metropolitan Univ.)

DATE:
Thu, Jul 30, 2009 13:00 - 16:40
Fri, Jul 31, 2009 10:00 - 14:35

PLACE:
Icho-Kaikan, Suita Campus, Osaka University(1-1, Yamadaoka, Suita-shi, Osaka 565-0871 Japan. 10 min. walk from Handai-Byoin-Mae on Osaka Monorail.http://www.osaka-u.ac.jp/eng/accessmap.html. Prof. Hidemitsu Aoki. +81-6-6879-7699)

TOPICS:

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Thu, Jul 30 PM (13:00 - 16:40)
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(1) 13:00 - 13:25
VOC sensing filter using organic filed-effect transistor
Wataru Takashima, Kouichi Takahata, Keiichi Kaneto (Kyushu Inst. Tech.)

(2) 13:25 - 13:50
Effects of pH of Dyes on Characteristics of Dye-Sensitized Solar Cells
Koudai Kukita, Hiroshi Iino, Kaoru Kaminosono, Shoji Furukawa (Kyushu Institute of Tech.)

(3) 13:50 - 14:15
Study on Fabrication of Oxide Semiconductor Film for Dye-Sensitized Solar Cells by Low Temperature Annealing
Daisuke Honda, Takashi Yasuda, Shoji Furukawa (Kyushu Institute of Tech.)

----- Break ( 10 min. ) -----

(4) 14:25 - 14:50
Sensing of organic acid using ion exchange fiber film
Masanori Ohnishi, Saori Hotta, Hidemitsu Aoki, Takeshi Ohmi (Osaka Univ.), Kazuhiro Kumeta, Yasuto Hata (Nitivy Corp.), Chiharu Kimura, Takashi Sugino (Osaka Univ.)

(5) 14:50 - 15:15
Transient Properties of Organic Light-Emitting Diodes For Application to Organic Optical Sensor Devices
Hirotake Kajii, Noriyoshi Takahota, Ryotaro Takata, Daisuke Kasama, Yutaka Ohmori (Osaka Univ.)

(6) 15:15 - 15:40
Highly sensitive detection of 2,4,6-trinitrotoluene using surface plasmon resonance sensor with displacement immunoassay
Takeshi Onodera, Yutaka Mizuta, Kazuhiko Horikawa, Kiyoshi Matsumoto, Norio Miura, Kiyoshi Toko (Kyushu Univ.)

----- Break ( 10 min. ) -----

(7) 15:50 - 16:15
Current Control of Open-Gate AlGaN/GaN HFET via Electrolyte
Kenji Nozaki, Yoshiya Takahashi, Jin-Ping Ao, Yasuo Ohno (Tokushima Univ.)

(8) 16:15 - 16:40
Threshold voltage control and temperature dependence of normally off mode AlGaN/GaN HFET with p-type GaN gate
Takayuki Sugiyama, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.)

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Fri, Jul 31 AM (10:00 - 14:35)
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(9) 10:00 - 10:40
[Keynote Address]
Prospect of Integrated MEMS Technology for Integration with Diverse Functionalities
Kazuya Masu (Tokyo Ins. Tech.)

(10) 10:40 - 11:05
Fabrication of Multi-axis Tactile Sensor for Future Robots by Using Microelectromechanical Systems
Masayuki Sohgawa, Takeshi Kanashima (Osaka Univ.), Kaoru Yamashita, Minoru Noda (Kyoto Inst. Tech.), Masanori Okuyama (Osaka Univ.), Haruo Noma (ATR)

----- Break ( 10 min. ) -----

(11) 11:15 - 11:40
Study of Electroless Copper Plating for Through Si Via Filling
Fumihiro Inoue, Takumi Yokoyama (Kansai Univ.), Kazuhiro Yamamoto, Shukichi Tanaka (NiCT), Shoso Shingubara (Kansai Univ.)

(12) 11:40 - 12:05
Process technology of MEMS microscale-coil structure for energy harvesting with Cu electroplating adding magnetic fields
Naoki Ooi, Hidemitsu Aoki, Eitaro Kubo, Jong-Hyeon Jeong, Chiharu Kimura, Takashi Sugino (Osaka Univ.)

----- Lunch Break ( 75 min. ) -----

(13) 13:20 - 13:45
Micromachined Methane Sensor Based on Palladium Catalytic Thin Layer/Tin Oxide Thick Film
-- Improvement in Thermal Shock Resistance by Examining its Design --
Tadashi Takada, Naganori Dougami, Yoshinori Nakataya (New Cosmos Electric Co.,Ltd.)

(14) 13:45 - 14:10
Development of wide range micro vacuum sensor with TaAl-N thin film
Yukiko Okano, Shuichi Tajiri, Takashi Aozono (Okanoworks), Akio Okamoto (TRI), Soichi Ogawa (Ogawa Creation Research Laboratory), Hiroshi Mima (Osaka City Univ.)

(15) 14:10 - 14:35
Charge storage technique using soft X-rays for silicon microphone
Masahide Goto, Kei Hagiwara (NHK), Yoshinori Iguchi (NHK Engineering Services), Yoshinobu Yasuno, Hidekazu Kodama (Kobayashi Institute of Physical Research), Kenichi Kidokoro (RION), Toshifumi Tajima (NHK)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.
Keynote Address will have 30 minutes for presentation and 10 minutes for discussion.

# CONFERENCE SPONSORS:
- This conference is co-sponsored by the Guraduate School of Engineering Osaka University.

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Thu, Oct 15, 2009 - Fri, Oct 16, 2009: [Mon, Aug 17]

# SECRETARY:
Koichi Murata（NTT)
TEL：046-240-2871、FAX：046-270-2872
E-mail：