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=============================================== Technical Committee on Electron Devices (ED) Chair: Kunio Tsuda (Toshiba) Vice Chair: Michihiko Suhara (TMU) Secretary: Manabu Arai (New JRC), Masataka Higashiwaki (NICT) Assistant: Toshiyuki Oishi (Saga Univ.), Tatsuya Iwata (TUT) =============================================== Technical Committee on Component Parts and Materials (CPM) Chair: Fumihiko Hirose (Yamagata Univ.) Vice Chair: Mayumi Takeyama (Kitami Inst. of Tech.) Secretary: Nobuyuki Iwata (Nihon Univ.), Yuichi Nakamura (Toyohashi Univ. of Tech.) Assistant: Yuichi Akage (NTT) =============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Tatsuya Kunikiyo (Renesas) Vice Chair: Takahiro Shinada (Tohoku Univ.) Secretary: Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas) Assistant: Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY) DATE: Thu, May 24, 2018 13:30 - 16:40 PLACE: Venture Business Laboratory, Toyohashi Univ. Tech.(http://www.vbl.tut.ac.jp/. Prof. Tatsuya Iwata, Toyohashi Univ. Tech.+81-532-44-6718) TOPICS: Crystal growth, characterization, and devices (compound semiconductors, Si, SiGe, opto-electrical materials), and others ---------------------------------------- Thu, May 24 PM (13:30 - 16:40) ---------------------------------------- (1) 13:30 - 13:55 Fabrication and characterization of flexible organic thermoelectric materials Naoki Kishi, Satoshi Hibi, Yuta Yoshida, Keisuke Ono, Yuma Sawada, Hiroki Kunieda, Yuya Kondo (NITech) (2) 13:55 - 14:20 Fabrication of Cu-O Thin Films by Galvanostatic Electrochemical Deposition from Weakly Acidic Solutions mansoureh keikhaei, Masaya Ichimura (NIT) (3) 14:20 - 14:45 MEMS bio sensor using suspended graphene fabricated by low-pressure dry transfer technique Shin Kidane, Hayato Ishida, Kazuaki Sawada (Toyohashi Univ. of Technol.), Kazuhiro Takahashi (Toyohashi Univ. of Technol./JST-PRESTO) (4) 14:45 - 15:10 Growth of high quality InSb channel layer with InxGa1-xSb heteroepitaxial films on Si(111) A. A. Mohammad Monzur-Ul-Akhir, Masayuki Mori, Koichi Maezawa (University of Toyama) ----- Break ( 15 min. ) ----- (5) 15:25 - 15:50 The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida (Sciocs) (6) 15:50 - 16:15 Temperature dependence of hydrogen-related donor in FZ-Silicon Akira Kiyoi, Katsumi Nakamura (Mitsubishi Electric Corp.) (7) 16:15 - 16:40 Reduction of threading dislocation density in Ge layers on Si by introducing tunnel-shaped voids Motoki Yako (Univ. of Tokyo), Yasuhiko Ishikawa (Toyohashi Univ. of Tech.), Kazumi Wada (Massachusetts Inst. Tech.) # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. === Technical Committee on Electron Devices (ED) === # FUTURE SCHEDULE: Wed, Aug 8, 2018 (changed): Kikai-Shinko-Kaikan Bldg. [Fri, Jun 15], Topics: Sensor, MEMS, general（※This Technical Committee Conference was canceled as typhoon approach is expected.） # SECRETARY: Manabu Arai（New Japan Radio Co.,Ltd) TEL：+81-049-278-1441 FAX：+81-49-278-1269 E-mail：   i njr Masataka Higashiwaki (NICT) TEL : +81-42-327-6092 Fax : +81-42-327-5527 E-mail : m      === Technical Committee on Component Parts and Materials (CPM) === # FUTURE SCHEDULE: Thu, Aug 9, 2018 - Fri, Aug 10, 2018: Hirosaki Univ. [Mon, Jun 11], Topics: Component Parts and Materials, etc. Thu, Aug 23, 2018 - Fri, Aug 24, 2018: Otaru Camber of Commerce & Industry [Fri, Jun 15] === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Mon, Jun 25, 2018: Nagoya Univ. VBL3F [Mon, Apr 16], Topics: Material Science and Process Technology for MOS Devices and Memories Tue, Aug 7, 2018 - Thu, Aug 9, 2018: Hokkaido Univ., Graduate School of IST M Bldg., M151 [Tue, Jun 19], Topics: Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications # SECRETARY: Rihito Kuroda(Tohoku Univ.) Tel 022-795-4833 Fax 022-795-4834 E-mail:       e3  Last modified: 2018-03-17 15:41:11 |
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