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=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Tanemasa Asano (Kyushu Univ.) Vice Chair: Toshihiro Sugii (Fujitsu) Secretary: Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony) Assistant: Syunichiro Ohmi (Tokyo Inst. of Tech.) =============================================== Technical Committee on Electron Device (ED) Chair: Masaaki Kuzuhara (Univ. of Fukui) Vice Chair: Tamotsu Hashidume (Hokkaido Univ.) Secretary: Manabu Arai (New JRC), Shin-ichiro Takatani (Hitachi) Assistant: Naoki Hara (Fujitsu Labs.), Koichi Murata (NTT) DATE: Wed, Jan 30, 2008 13:30 - 18:20 Thu, Jan 31, 2008 09:00 - 12:30 PLACE: (011-706-3211) TOPICS: ---------------------------------------- Wed, Jan 30 PM (13:30 - 15:10) ---------------------------------------- (1) 13:30 - 13:55 MBE-VLS growth of GaAs nanowires on (111)Si substrate Masahito Yamaguchi, Ji-Hyun Paek, Tatsuya Nishiwaki, Yutaka Yoshida, Nobuhiko Sawaki (Nagoya Univ.) (2) 13:55 - 14:20 Electrical characterizations of InGaAs related nanowires grown by selective-area MOVPE Jinichiro Noborisaka, Takuya Sato, Junichi Motohisa, Shinjiro Hara, Takashi Fukui (Hokkaido Univ.) (3) 14:20 - 14:45 Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope Maciej Ligowski (Shizuoka Univ./Warsaw Univ. of Tech.), Ratno Nuryadi, Akihiro Ichiraku, Miftahul Anwar (Shizuoka Univ.), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.) (4) 14:45 - 15:10 Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer Daniel Moraru, Daisuke Nagata, Kiyohito Yokoi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) ----- Break ( 10 min. ) ----- ---------------------------------------- Wed, Jan 30 PM (15:20 - 18:20) ---------------------------------------- (5) 15:20 - 15:55 [Invited Talk] InP ballistic transistors Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech) (6) 15:55 - 16:20 Nonlinear electron transport properties in InAs/AlGaSb three-terminal ballistic junctions Masatoshi Koyama, Tatsuya Inoue, Naoki Amano, Kenji Fujiwara, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. Tech.) (7) 16:20 - 16:45 Control of Nonlinear Characteristics in GaAs-based Three-terminal Nanowire Junction Devices and its Application to Logic Gates Shaharin Fadzli Abd Rahman, Yuta Shiratori, Seiya Kasai (Hokkaido Univ.) ----- Break ( 5 min. ) ----- (8) 16:50 - 18:20 ---------------------------------------- Thu, Jan 31 AM (09:00 - 12:30) ---------------------------------------- (9) 09:00 - 09:25 Development of high-efficiency thermoelectric devices using Si nanostructures Hiroya Ikeda, Naomi Yamashita (Shizuoka Univ.) (10) 09:25 - 09:50 Approaches to the high temperature operation of the carbon nanotube single electron transistor Takahiro Mori (RIKEN), Shunsuke Sato, Kazuo Omura, Katsumi Uchida, Hirofumi Yajima (TUS), Koji Ishibashi (RIKEN) (11) 09:50 - 10:15 Proposal of CdTe X-ray image sensor driven by FEA with focusing electrode Yuichiro Hanawa, Takuya Sakata, Takashi Soda, Gui Han, Hisashi Morii, Katsumi Matsubara, Susumu Yamashita (RIE. Shizuoka Univ.), Masayoshi Nagao, Seigo Kanemaru (AIST), Yoichiro Neo, Toru Aoki, Hidenori Mimura (RIE. Shizuoka Univ.) (12) 10:15 - 10:40 Ultra-short pulse generators using resonant tunneling diodes and their integration with antenna on AlN ceramic substrates Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Hiroya Andoh (Toyota College Tech.), Kazuhiro Akamatsu, Hirofumi Nakata (Nippon Mining & Metals) ----- Break ( 10 min. ) ----- (13) 10:50 - 11:15 Analysis on 4RTD Logic Circuits Tomohiko Ebata, Hiroki Okuyama, Takao Waho (Sophia Univ.) (14) 11:15 - 11:40 Implementation of active and sequential circuits on GaAs-based nanowire network structures controlled by Schottky wrap gates Seiya Kasai (Hokkaido Univ., JST), Hong-Quan Zhao, Tamotsu Hashizume (Hokkaido Univ.) (15) 11:40 - 12:05 Half adder operation using 2-output single-electron device composed of a Si nanodot array Takuya Kaizawa, Mingyu Jo, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Kenji Yamazaki, Yukinori Ono (NTT), Hiroshi Inokawa (HShizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.) (16) 12:05 - 12:30 Single-electron circuit for stochastic data processing using nano-MOSFETs Katsuhiko Nishiguchi, Akira Fujiwara (NTT BRL) === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Fri, Feb 8, 2008: Kikai-Shinko-Kaikan Bldg. [unfixed] Fri, Mar 14, 2008: Kikai-Shinko-Kaikan Bldg. [Mon, Jan 28] Fri, Apr 11, 2008 - Sat, Apr 12, 2008: Okinawa Seinen Kaikan [Tue, Feb 12], Topics: TFT Materials, Devices, and Applications and Others related to SDM and OME activity # SECRETARY: Yasushiro Nishioka (Nihon University, College of Science and Technology) TEL047-469-6482,FAX047-467-9504 E-mail:     e   t n-u ,a  cmsk  === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Thu, Mar 6, 2008 - Fri, Mar 7, 2008: [Mon, Dec 10], Topics: DENKOKU NO MORI # SECRETARY: Manabu Arai（New JRC） TEL: 049-278-1477、FAX: 049-278-1419 E-mail:   injr Shinichiro Takatani（Hitachi） TEL: 049-278-1477、FAX: 049-278-1419 E-mail:     er  Koichi Murata（NTT) TEL：046-240-2871、FAX：046-270-2872 E-mail：  aecl Hara Naoki （Fujitsu Lab.） TEL : 046-250-8242、FAX : 046-250-4337 E-mail :   nf    Last modified: 2007-11-20 08:50:08 |
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