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Technical Committee on Silicon Device and Materials (SDM)
Chair: Yuzou Oono (Univ. of Tsukuba) Vice Chair: Tatsuya Kunikiyo (Renesas)
Secretary: Rihito Kuroda (Tohoku Univ.)
Assistant: Tadashi Yamaguchi (Renesas)

DATE:
Thu, Nov 6, 2014 10:05 - 15:30
Fri, Nov 7, 2014 10:00 - 14:40

PLACE:
(http://www.jspmi.or.jp/english/about/access.html)

TOPICS:
Process, Device, Circuit Simulation, etc.

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Thu, Nov 6 AM (10:00 - 11:45)
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----- Opening Address ( 5 min. ) -----

(1) 10:05 - 10:30
An Analytical Modeling for Asymmetric Double Gate Tunnel Field Effect Transistor
Lv Hongfei, Shingo Sato, Yasuhisa Omura (Kansai Univ.), Abhijit Mallik (Univ. Calcutta)

(2) 10:30 - 10:55
Physics-based Analytical Model for Gate-on-Germanium Source (GoGeS) TFET
Yasuhisa Omura, Shingo Sato (Kansai Univ.), Abhijit Mallik (Univ. Calcutta)

(3) 10:55 - 11:20
Three-dimensional calculation of ion implantation to SiC substrate
Minoru Okamoto, Mamoru Shimizu, Yasuyuki Ohkura, Ken Yamaguchi, Hideaki Koike (AdvanceSoft)

(4) 11:20 - 11:45
Spice Model of SiC Power MOSFET (DioMOS)
-- Modeling Methodology for Reverse Current-voltage Characteristics of SiC --
Tetsuya Yamamoto, Tetsuro Sawai, Nobuyuki Horikawa, Yoshihiko Kanzawa, Kenji Mizutani, Nobuyuki Otsuka, Eiji Fujii (Panasonic)

----- Lunch Break ( 75 min. ) -----

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Thu, Nov 6 PM (13:00 - 15:30)
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(5) 13:00 - 13:50
[Invited Talk]
Device simulation
-- More than 30 years in Toshiba's TCAD --
Naoyuki Shigyo (Toshiba)

(6) 13:50 - 14:40
[Invited Talk]
Recent Progress in Electronic Device Materials Design by Computational Physics
Hiroyuki Kageshima (Shimane Univ.)

(7) 14:40 - 15:30
[Invited Talk]
Modeling and Simulation of Charge-Trapping Memory and Reliability Issues
Takamitsu Ishihara, Naoki Yasuda, Shosuke Fujii (Toshiba)

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Fri, Nov 7 AM (10:00 - 11:40)
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(8) 10:00 - 10:50
[Invited Talk]
SISPAD 2014 Review
Kenichiro Sonoda (Renesas Electronics)

(9) 10:50 - 11:15
Stress and Doping Impact on Intrinsic Point Defect Behaviour in Growing Single Crystal Silicon
Koji Sueoka, Eiji Kamiyama, Kozo Nakamura (Okayama Pref. Univ.), Jan Vanhellemont (Ghent Univ.)

(10) 11:15 - 11:40
Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Extracted Using Monte Carlo Method
Hideaki Tsuchiya, Ryoma Ishida (Kobe Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Matsuto Ogawa (Kobe Univ.)

----- Lunch Break ( 80 min. ) -----

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Fri, Nov 7 PM (13:00 - 14:40)
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(11) 13:00 - 13:50
[Invited Talk]
Statistical analysis of random telegraph noise and its consequence for modeling of oxide traps
Hiroshi Miki (Hitachi)

(12) 13:50 - 14:40
[Invited Talk]
Interface Engineering for High Mobility Ge MOSFETs: Surface Orientation and Scattering Mechanism
ChoongHyun Lee, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.

# CONFERENCE SPONSORS:
- This conference is co-sponsored by The Japan Society of Applied Physics.

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Fri, Dec 12, 2014: Kyoto University [Fri, Oct 10], Topics: Si and Si-related Materials and Devices, Display Technology
Tue, Jan 27, 2015: Kikai-Shinko-Kaikan Bldg. [unfixed]
Thu, Feb 5, 2015 - Fri, Feb 6, 2015: Hokkaido Univ. [Fri, Dec 5], Topics: Functional nanodevices and related technologies

# SECRETARY:
Hisahiro Ansai (Sony)
E-mail: Hi