Thu, Nov 19 AM
08:55 - 18:25 |
| |
08:55-09:00 |
Opening Address ( 5 min. ) |
| (1) |
09:00-09:25 |
GaN Re-growth Using Ta Mask Which Etches Covering GaN Layer |
Kohei Hara, Yoshiki Naoi, Shiro Sakai (Univ. of Tokushima) |
| (2) |
09:25-09:50 |
HVPE growth of {11-22} GaN Crystals on m-plane Sapphire Substrates |
Hitoshi Sasaki, Hiroki Goto, Akira Usui (Furukawa Co., Ltd.) |
| (3) |
09:50-10:15 |
MOVPE growth and optical properties of AlGaN on AlN/sapphire |
Yuki Shimahara, Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HAMAMATSU PHOTONICS K.K.) |
| |
10:15-10:25 |
Break ( 10 min. ) |
| (4) |
10:25-10:50 |
MBE growth of well-aligned InN crystals using Mo-mask selective area growth technique |
Jumpei Kamimura, Katsumi Kishino, Akihiko Kikuchi (Sophia Univ./JST) |
| (5) |
10:50-11:15 |
High quality InN crystal growh by RF-MBE
-- Growth of position-controlled InN nanocolumns -- |
Tsutomu Araki, Tomohiro Yamaguchi, Masamitsu Kaneko (Ritsumeikan Univ.), Yasushi Nanishi (Ritsumeikan Univ./Seoul National Univ.) |
| (6) |
11:15-11:40 |
Proposal of new growth method for high-quality InN and development on growth of InGaN |
Tomohiro Yamaguchi (Ritsumeikan Univ.), Yasushi Nanishi (Ritsumeikan Univ./Seoul National Univ.) |
| (7) |
11:40-12:05 |
Exciton emission mechanism in AlN epitaxial films |
Takeyoshi Onuma, Kouji Hazu (Tohoku Univ.), Takayuki Sota (Waseda Univ.), Akira Uedono (Univ. of Tsukuba), Shigefusa F. Chichibu (Tohoku Univ.) |
| |
12:05-13:05 |
( 60 min. ) |
| (8) |
13:05-13:30 |
High spatial resolution PL mapping of {11-22} InGaN quantum wells by scanning near-field optical microscope |
Akio Kaneta, Masaya Ueda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
| (9) |
13:30-13:55 |
Mapping of luminous intensity saturation if InGaN/GaN SQWs studied by scanning near-field optical microscopy |
Akira Hashiya, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
| (10) |
13:55-14:20 |
Anisotropy in structural and optical properties of nonpolar group III nitrides grown on ZnO substrates |
Atsushi Kobayashi, Kazuma Shimomoto, Kohei Ueno, Tomofumi Kajima, Jitsuo Ohta (Univ. of Tokyo), Hiroshi Fujioka, Masaharu Oshima (Univ. of Tokyo/JST) |
| (11) |
14:20-14:45 |
Theoretical Studies on the Characteristic Electronic Structures of In-Containint Nitride Seimiconductors Based of the First Principles Calculations |
Kenji Shiraishi, Jun-ichi Iwata (Univ. of Tsukuba/JST), Teruaki Obata (Univ. of Tsukuba), Atsushi Oshiyama (Univ. of Tokyo/JST) |
| |
14:45-14:55 |
Break ( 10 min. ) |
| (12) |
14:55-15:20 |
Electrical and optical properties of polycrystalline GaInAs thin films |
Yoshichika Torii, Takuya Okuzako, Shin-ya Takami, Yasutomo Kajikawa (Shimane Univ.) |
| (13) |
15:20-15:45 |
Thermodynamical aspects for the raised pressure MOVPE for growth of GaInN |
Kensuke Nagata, Daisuke Iida, Kentaro Nagamatsu, Kenichiro Takeda, Tetsuya Matsubara, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ) |
| (14) |
15:45-16:10 |
Ultraviolet AlGaN based multiple-quantum-well laser diodes |
Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Yasufumi Takagi, Kazuya Uchiyama, Hirofumi Kan (Hamamatsu Photonics) |
| (15) |
16:10-16:35 |
Reduction in operating voltage of UV laser diode |
Tomoki Ichikawa, Kenichiro Takeda, Yuji Ogiso, Kengo Nagata, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan (Hamamatsu Photonics K.K.) |
| |
16:35-16:45 |
Break ( 10 min. ) |
| (16) |
16:45-17:10 |
Fabrication of red, green and blue emitters using GaN-based UV Light-emitting diodes with Schottky-type structures |
Tohru Honda, Tadashi Nozaki, Naoyuki Sakai, Kazuyuki Noguchi (Kogakuin Univ.) |
| (17) |
17:10-17:35 |
High Efficiency ultraviolet emitters by activation annealing in oxygen flow |
Kengo Nagata, Tomoki Ichikawa, Kenichiro Takeda, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) |
| (18) |
17:35-18:00 |
Proposal of ultrathin InN-based asymmetric structure III-N QWs for novel photonic devices
-- Development from emitters into solar cells -- |
Kazuhide Kusakabe, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ.) |
| (19) |
18:00-18:25 |
GaN Photodetector with Nanostructure on Surface |
Jing Zhang, Yoshiki Naoi, Shiro Sakai (Univ. of Tokushima), Atsuyuki Fukano, Satoru Tanaka (SCIVAX) |
Fri, Nov 20 AM
09:30 - 16:15 |
| (20) |
09:30-09:55 |
AlN growth on period trench patterned AlN/sapphire by Low-pressure HVPE |
Kohei Fujita, Kazuteru Okuura, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Jyun Norimatsu, Hideki Hirayama (Riken) |
| (21) |
09:55-10:20 |
High rate growth of GaN using 4 inch x 11 multi wafer MOVPE reactor (UR25K) |
Yoshiki Yano, Kazutada Ikenaga, Hiroki Tokunaga (Taiyo Nippon Sanso), Jun Yamamoto (TN EMC), Toshiya Tabuchi (Taiyo Nippon Sanso), Kousuke Uchiyama (TN EMC), Akira Yamaguchi, Yasushi Fukuda, Akinori Ubukata (Taiyo Nippon Sanso), Yasuhiro Harada, Yuzaburo Ban, Koh Matsumoto (TN EMC), Toshiaki Yamazaki (Taiyo Nippon Sanso) |
| (22) |
10:20-10:45 |
Characterization of quaternary InAlGaN/GaN HEMT epi-structures fabricated on 4inch diameter Si substrates |
Mikiya Ichimura, Makoto Miyoshi, Mitsuhiro Tanaka (NGK Insulators, Ltd.), Takashi Egawa (Nagoya Inst. of Tech.) |
| |
10:45-10:55 |
Break ( 10 min. ) |
| (23) |
10:55-11:20 |
Variation of surface properties in Mg-doped GaN |
Eri Ogawa, Tamotsu Hashizume (Hokkaido Univ./JST) |
| (24) |
11:20-11:45 |
Analysis of AlGaN/GaN HFET Current Collapse By Step Stress Measurement |
Kentaro Kuroda, Yusuke Ikawa, Kenta Mituyama, Jin-Ping Ao, Yasuo Ohno (The Univ of Tokushima) |
| (25) |
11:45-12:10 |
Surface properties and deep electronic levels of AlGaN with high Al compositions |
Katsuya Sugawara, Toshiharu Kubo (Hokkaido Univ.), Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tamotsu Hashizume (Hokkaido Univ.) |
| |
12:10-13:10 |
Lunch Break ( 60 min. ) |
| (26) |
13:10-13:35 |
Aluminum-Free Ohmic contact on Si implanted nitride semiconductors |
Akifumi Imai, Takuma Nanjo, Muneyoshi Suita, Yuji Abe, Eiji Yagyu, Tetsuyuki Kurata (Mitsubishi Electric Corp.) |
| (27) |
13:35-14:00 |
Low resistivity V/Al/Mo/Au ohmic contacts on AlGaN/GaN heterostructure |
Fuminao Watanabe (Fukui Univ.), Norimasa Yafune (JRCM/Sharp Corp.), Motoi Nagamori, Hironari Chikaoka (Fukui Univ.), Keiichi Sakuno (Sharp Corp.), Masaaki Kuzuhara (Fukui Univ.) |
| (28) |
14:00-14:25 |
High breakdown voltage of AlGaN/GaN HEMTs on Si substrates |
Takaaki Suzue, Lawrence Selvaraj, Takashi Egawa (Nagoya Inst. of Tech.) |
| (29) |
14:25-14:50 |
Large Current operation of GaN MOSFETs |
Takehiko Nomura, Hiroshi Kambayashi, Yoshihiro Satoh, Yuki Niiyama, Sadahiro Kato (Advanced Power Device Research Association) |
| |
14:50-15:00 |
Break ( 10 min. ) |
| (30) |
15:00-15:25 |
50 W at 5 GHz RF output power performance of GaN-HEMT on Si substrate |
Shinichi Hoshi, Masanori Itoh, Toshiharu Marui, Hideyuki Okita, Yoshiaki Morino, Isao Tamai, Fumihiko Toda, Shohei Seki (Oki Electric Industry Co., Ltd.), Takashi Egawa (Nagoya Inst. of Tech.) |
| (31) |
15:25-15:50 |
Development of GaN Schottky Diodes for Microwave Wireless Ubiquitous Power Distribution |
Kensuke Takahashi, Jin-Ping Ao (Tokushima Univ.), Naoki Shinohara (Kyoto Univ.), Naoki Niwa (Kajima Corp.), Teruo Fujiwara (Sho Engineering Corp.), Yasuo Ohno (Tokushima Univ.) |
| (32) |
15:50-16:15 |
Output characteristics of AlGaN/GaN HEMTs at 60 GHz frequency band |
Issei Watanabe, Akira Endoh, Yoshimi Yamashita, Nobumitsu Hirose (NICT), Takashi Mimura (NICT/Fujitsu Labs.), Toshiaki Matsui (NICT) |
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